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- Creators: Barrett, The Honors College
The first part of this thesis focuses on the optical properties of Mg-doped gallium nitride (GaN:Mg) epitaxial films. GaN is an emerging material for power electronics, especially for high power and high frequency applications. Compared to traditional Si-based devices, GaN-based devices offer superior breakdown properties, faster switching speed, and reduced system size. Some of the current device designs involve lateral p-n junctions which require selective-area doping. Dopant distribution in the selectively-doped regions is a critical issue that can impact the device performance. While most studies on Mg doping in GaN have been reported for epitaxial grown on flat c-plane substrates, questions arise regarding the Mg doping efficiency and uniformity in selectively-doped regions, where growth on surfaces etched away from the exact c-plane orientation is involved. Characterization of doping concentration distribution in lateral structures using secondary ion mass spectroscopy lacks the required spatial resolution. In this work, visualization of acceptor distribution in GaN:Mg epilayers grown by metalorganic chemical vapor deposition (MOCVD) was achieved at sub-micron scale using CL imaging. This was enabled by establishing a correlation among the luminescence characteristics, acceptor concentration, and electrical conductivity of GaN:Mg epilayers. Non-uniformity in acceptor distribution has been observed in epilayers grown on mesa structures and on miscut substrates. It is shown that non-basal-plane surfaces, such as mesa sidewalls and surface step clusters, promotes lateral growth along the GaN basal planes with a reduced Mg doping efficiency. The influence of surface morphology on the Mg doping efficiency in GaN has been studied.
The second part of this thesis focuses on the optical properties of InGaN for photovoltaic applications. The effects of thermal annealing and low energy electron beam irradiation (LEEBI) on the optical properties of MOCVD-grown In0.14Ga0.86N films were studied. A multi-fold increase in luminescence intensity was observed after 800 °C thermal annealing or LEEBI treatment. The mechanism leading to the luminescence intensity increase has been discussed. This study shows procedures that significantly improve the luminescence efficiency of InGaN, which is important for InGaN-based optoelectronic devices.
This creative project is a part of the work being done as a Senior Design Project in which an autonomous solar charge controller is being developed. The goal of this project is to design and build a prototype of an autonomous solar charge controller that can work independently of the power grid. This solar charge controller is being built for a community in Monument Valley, Arizona who live off grid. The controller is designed to step down power supplied by an array of solar panels to charge a 48V battery and supply power to an inverter. The charge controller can implement MPPT (Maximum Power Point Tracking) to charge the battery and power the inverter, it also is capable of disconnecting from the battery when the battery is fully charged and reconnecting when it detects that the battery has discharged. The charge controller can also switch from supplying power to the inverter from the panel to supplying power from the battery at low sun or night. These capabilities are not found in solar charge controllers that are on the market. This project aims to achieve all these capabilities and provide a solution for the problems being faced by the current solar charge controller