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Description
The work contained in this dissertation is focused on the optical properties of direct band gap semiconductors which crystallize in a wurtzite structure: more specifically, the III-nitrides and ZnO. By using cathodoluminescence spectroscopy, many of their properties have been investigated, including band gaps, defect energy levels, carrier lifetimes, strain states, exciton binding energies, and effects of electron irradiation on luminescence. Part of this work is focused on p-type Mg-doped GaN and InGaN. These materials are extremely important for the fabrication of visible light emitting diodes and diode lasers and their complex nature is currently not entirely understood. The luminescence of Mg-doped GaN films has been correlated with electrical and structural measurements in order to understand the behavior of hydrogen in the material. Deeply-bound excitons emitting near 3.37 and 3.42 eV are observed in films with a significant hydrogen concentration during cathodoluminescence at liquid helium temperatures. These radiative transitions are unstable during electron irradiation. Our observations suggest a hydrogen-related nature, as opposed to a previous assignment of stacking fault luminescence. The intensity of the 3.37 eV transition can be correlated with the electrical activation of the Mg acceptors. Next, the acceptor energy level of Mg in InGaN is shown to decrease significantly with an increase in the indium composition. This also corresponds to a decrease in the resistivity of these films. In addition, the hole concentration in multiple quantum well light emitting diode structures is much more uniform in the active region when Mg-doped InGaN (instead of Mg-doped GaN) is used. These results will help improve the efficiency of light emitting diodes, especially in the green/yellow color range. Also, the improved hole transport may prove to be important for the development of photovoltaic devices. Cathodoluminescence studies have also been performed on nanoindented ZnO crystals. Bulk, single crystal ZnO was indented using a sub-micron spherical diamond tip on various surface orientations. The resistance to deformation (the "hardness") of each surface orientation was measured, with the c-plane being the most resistive. This is due to the orientation of the easy glide planes, the c-planes, being positioned perpendicularly to the applied load. The a-plane oriented crystal is the least resistive to deformation. Cathodoluminescence imaging allows for the correlation of the luminescence with the regions located near the indentation. Sub-nanometer shifts in the band edge emission have been assigned to residual strain the crystals. The a- and m-plane oriented crystals show two-fold symmetry with regions of compressive and tensile strain located parallel and perpendicular to the ±c-directions, respectively. The c-plane oriented crystal shows six-fold symmetry with regions of tensile strain extending along the six equivalent a-directions.
ContributorsJuday, Reid (Author) / Ponce, Fernando A. (Thesis advisor) / Drucker, Jeff (Committee member) / Mccartney, Martha R (Committee member) / Menéndez, Jose (Committee member) / Shumway, John (Committee member) / Arizona State University (Publisher)
Created2013
Description
Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures. The emission characteristics are examined by cathodoluminescence spectroscopy and imaging, and are correlated with the structural and electrical properties studied by transmission electron microscopy and electron holography. Four major areas are covered in this dissertation, which are described next. The effect of strain on the emission characteristics in wurtzite GaN has been studied. The values of the residual strain in GaN epilayers with different dislocation densities are determined by x-ray diffraction, and the relationship between exciton emission energy and the in-plane residual strain is demonstrated. It shows that the emission energy increases withthe magnitude of the in-plane compressive strain. The temperature dependence of the emission characteristics in cubic GaN has been studied. It is observed that the exciton emission and donor-acceptor pair recombination behave differently with temperature. The donor-bound exciton binding energy has been measured to be 13 meV from the temperature dependence of the emission spectrum. It is also found that the ionization energies for both acceptors and donors are smaller in cubic compared with hexagonal structures, which should contribute to higher doping efficiencies. A comprehensive study on the structural and optical properties is presented for InGaN/GaN quantum wells emitting in the blue, green, and yellow regions of the electromagnetic spectrum. Transmission electron microscopy images indicate the presence of indium inhomogeneties which should be responsible for carrier localization. The temperature dependence of emission luminescence shows that the carrier localization effects become more significant with increasing emission wavelength. On the other hand, the effect of non-radiative recombination on luminescence efficiency also varies with the emission wavelength. The fast increase of the non-radiative recombination rate with temperature in the green emitting QWs contributes to the lower efficiency compared with the blue emitting QWs. The possible saturation of non-radiative recombination above 100 K may explain the unexpected high emission efficiency for the yellow emitting QWs Finally, the effects of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells emitting in visible spectral regions have been studied. A significant improvement of the emission efficiency is observed, which is associated with a blue shift in the emission energy, a reduced recombination lifetime, an increased spatial homogeneity in the luminescence, and a weaker internal field across the quantum wells. These are explained by a partial strain relaxation introduced by the InGaN underlayer, which is measured by reciprocal space mapping of the x-ray diffraction intensity.
ContributorsLi, Di (Author) / Ponce, Fernando (Thesis advisor) / Culbertson, Robert (Committee member) / Yu, Hongbin (Committee member) / Shumway, John (Committee member) / Menéndez, Jose (Committee member) / Arizona State University (Publisher)
Created2012
Description
A new photovoltaic (PV) array power converter circuit is presented. The salient features of this inverter are: transformerless topology, grounded PV array, and only film capacitors. The motivations are to reduce cost, eliminate leakage ground currents, and improve reliability. The use of Silicon Carbide (SiC) transistors is the key enabling technology for this particular circuit to attain good efficiency.
Traditionally, grid connected PV inverters required a transformer for isolation and safety. The disadvantage of high frequency transformer based inverters is complexity and cost. Transformerless inverters have become more popular recently, although they can be challenging to implement because of possible high frequency currents through the PV array's stay capacitance to earth ground. Conventional PV inverters also typically utilize electrolytic capacitors for bulk power buffering. However such capacitors can be prone to decreased reliability.
The solution proposed here to solve these problems is a bi directional buck boost converter combined with half bridge inverters. This configuration enables grounding of the array's negative terminal and passive power decoupling with only film capacitors.
Several aspects of the proposed converter are discussed. First a literature review is presented on the issues to be addressed. The proposed circuit is then presented and examined in detail. This includes theory of operation, component selection, and control systems. An efficiency analysis is also conducted. Simulation results are then presented that show correct functionality. A hardware prototype is built and experiment results also prove the concept. Finally some further developments are mentioned.
As a summary of the research a new topology and control technique were developed. The resultant circuit is a high performance transformerless PV inverter with upwards of 97% efficiency.
Traditionally, grid connected PV inverters required a transformer for isolation and safety. The disadvantage of high frequency transformer based inverters is complexity and cost. Transformerless inverters have become more popular recently, although they can be challenging to implement because of possible high frequency currents through the PV array's stay capacitance to earth ground. Conventional PV inverters also typically utilize electrolytic capacitors for bulk power buffering. However such capacitors can be prone to decreased reliability.
The solution proposed here to solve these problems is a bi directional buck boost converter combined with half bridge inverters. This configuration enables grounding of the array's negative terminal and passive power decoupling with only film capacitors.
Several aspects of the proposed converter are discussed. First a literature review is presented on the issues to be addressed. The proposed circuit is then presented and examined in detail. This includes theory of operation, component selection, and control systems. An efficiency analysis is also conducted. Simulation results are then presented that show correct functionality. A hardware prototype is built and experiment results also prove the concept. Finally some further developments are mentioned.
As a summary of the research a new topology and control technique were developed. The resultant circuit is a high performance transformerless PV inverter with upwards of 97% efficiency.
ContributorsBreazeale, Lloyd C (Author) / Ayyanar, Raja (Thesis advisor) / Karady, George G. (Committee member) / Tylavsky, Daniel (Committee member) / Tsakalis, Konstantinos (Committee member) / Arizona State University (Publisher)
Created2014
Description
Recent literature indicates potential benefits in microchannel cooling if an inlet orifice is used to suppress pressure oscillations that develop under two-phase conditions. This study investigates the costs and benefits of using an adjustable microchannel inlet orifice. The focus is on orifice effect during steady-state boiling and critical heat flux (CHF) in the channels using R134a in a pumped refrigerant loop (PRL). To change orifice size, a dam controlled with a micrometer was placed in front of 31 parallel microchannels. Each channel had a hydraulic diameter of 0.235 mm and a length of 1.33 cm. For steady state two-phase conditions, mass fluxes of 300 kg m-2 s-1 and 600 kg m-2 s-1were investigated. For orifice sizes with a hydraulic diameter to unrestricted hydraulic diameter (Dh:Dh,ur) ratio less than 35 percent, oscillations were reduced and wall temperatures fell up to 1.5 °C. Critical heat flux data were obtained for 7 orifice sizes with mass fluxes from 186 kg m-2 s-1 to 847 kg m-2 s-1. For all mass fluxes and inlet conditions tested, CHF values for a Dh:Dh,ur ratio of 1.8 percent became increasingly lower (up to 37 W cm-2 less) than those obtained with larger orifices. An optimum orifice size with Dh:Dh,ur of 35 percent emerged, offering up to 5 W cm-2 increase in CHF over unrestricted conditions at the highest mass flux tested, 847 kg m-2 s-1. These improvements in cooling ability with inlet orifices in place under both steady-state and impending CHF conditions are modest, leading to the conclusion that inlet orifices are only mildly effective at improving heat transfer coefficients. Stability of the PRL used for experimentation was also studied and improved. A vapor compression cycle's (VCC) proportional, integral, and derivative controller was found to adversely affect stability within the PRL and cause premature CHF. Replacing the VCC with an ice water heat sink maintained steady pumped loop system pressures and mass flow rates. The ice water heat sink was shown to have energy cost savings over the use of a directly coupled VCC for removing heat from the PRL.
ContributorsOdom, Brent A (Author) / Phelan, Patrick E (Thesis advisor) / Herrmann, Marcus (Committee member) / Trimble, Steve (Committee member) / Tasooji, Amaneh (Committee member) / Holcomb, Don (Committee member) / Arizona State University (Publisher)
Created2012
Description
Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting diodes (LEDs) have increasingly displaced incandescent and fluorescent bulbs as the new major light sources for lighting and display. In addition, due to their large bandgap and high critical electrical field, WBG semiconductors are also ideal candidates for efficient power conversion.
In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.
In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.
In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
ContributorsFu, Houqiang (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2019
Description
This thesis investigates different unidirectional topologies for the on-board charger in an electric vehicle and proposes soft-switching solutions in both the AC/DC and DC/DC stage of the converter with a power rating of 3.3 kW. With an overview on different charger topologies and their applicability with respect to the target specification a soft-switching technique to reduce the switching losses of a single phase boost-type PFC is proposed. This work is followed by a modification to the popular soft-switching topology, the dual active bridge (DAB) converter for application requiring unidirectional power flow. The topology named as the semi-dual active bridge (S-DAB) is obtained by replacing the fully active (four switches) bridge on the load side of a DAB by a semi-active (two switches and two diodes) bridge. The operating principles, waveforms in different intervals and expression for power transfer, which differ significantly from the basic DAB topology, are presented in detail. The zero-voltage switching (ZVS) characteristics and requirements are analyzed in detail and compared to those of DAB. A small-signal model of the new configuration is also derived. The analysis and performance of S-DAB are validated through extensive simulation and experimental results from a hardware prototype.
Secondly, a low-loss auxiliary circuit for a power factor correction (PFC) circuit to achieve zero voltage transition is also proposed to improve the efficiency and operating frequency of the converter. The high dynamic energy generated in the switching node during turn-on is diverted by providing a parallel path through an auxiliary inductor and a transistor placed across the main inductor. The paper discusses the operating principles, design, and merits of the proposed scheme with hardware validation on a 3.3 kW/ 500 kHz PFC prototype. Modifications to the proposed zero voltage transition (ZVT) circuit is also investigated by implementing two topological variations. Firstly, an integrated magnetic structure is built combining the main inductor and auxiliary inductor in a single core reducing the total footprint of the circuit board. This improvement also reduces the size of the auxiliary capacitor required in the ZVT operation. The second modification redirects the ZVT energy from the input end to the DC link through additional half-bridge circuit and inductor. The half-bridge operating at constant 50% duty cycle simulates a switching leg of the following DC/DC stage of the converter. A hardware prototype of the above-mentioned PFC and DC/DC stage was developed and the operating principles were verified using the same.
Secondly, a low-loss auxiliary circuit for a power factor correction (PFC) circuit to achieve zero voltage transition is also proposed to improve the efficiency and operating frequency of the converter. The high dynamic energy generated in the switching node during turn-on is diverted by providing a parallel path through an auxiliary inductor and a transistor placed across the main inductor. The paper discusses the operating principles, design, and merits of the proposed scheme with hardware validation on a 3.3 kW/ 500 kHz PFC prototype. Modifications to the proposed zero voltage transition (ZVT) circuit is also investigated by implementing two topological variations. Firstly, an integrated magnetic structure is built combining the main inductor and auxiliary inductor in a single core reducing the total footprint of the circuit board. This improvement also reduces the size of the auxiliary capacitor required in the ZVT operation. The second modification redirects the ZVT energy from the input end to the DC link through additional half-bridge circuit and inductor. The half-bridge operating at constant 50% duty cycle simulates a switching leg of the following DC/DC stage of the converter. A hardware prototype of the above-mentioned PFC and DC/DC stage was developed and the operating principles were verified using the same.
ContributorsKulasekaran, Siddharth (Author) / Ayyanar, Raja (Thesis advisor) / Karady, George G. (Committee member) / Qin, Jiangchao (Committee member) / Lei, Qin (Committee member) / Arizona State University (Publisher)
Created2017
Description
Alternate sources of energy such as wind, solar photovoltaic and fuel cells are coupled to the power grid with the help of solid state converters. Continued deregulation of the power sector coupled with favorable government incentives has resulted in the rapid growth of renewable energy sources connected to the distribution system at a voltage level of 34.5kV or below. Of late, many utilities are also investing in these alternate sources of energy with the point of interconnection with the power grid being at the transmission level. These converter interfaced generation along with their associated control have the ability to provide the advantage of fast control of frequency, voltage, active, and reactive power. However, their ability to provide stability in a large system is yet to be investigated in detail. This is the primary objective of this research.
In the future, along with an increase in the percentage of converter interfaced renewable energy sources connected to the transmission network, there exists a possibility of even connecting synchronous machines to the grid through converters. Thus, all sources of energy can be expected to be coupled to the grid through converters. The control and operation of such a grid will be unlike anything that has been encountered till now. In this dissertation, the operation and behavior of such a grid will be investigated. The first step in such an analysis will be to build an accurate and simple mathematical model to represent the corresponding components in commercial software. Once this bridge has been crossed, conventional machines will be replaced with their solid state interfaced counterparts in a phased manner. At each stage, attention will be devoted to the control of these sources and also on the stability performance of the large power system.
This dissertation addresses various concerns regarding the control and operation of a futuristic power grid. In addition, this dissertation also aims to address the issue of whether a requirement may arise to redefine operational reliability criteria based on the results obtained.
In the future, along with an increase in the percentage of converter interfaced renewable energy sources connected to the transmission network, there exists a possibility of even connecting synchronous machines to the grid through converters. Thus, all sources of energy can be expected to be coupled to the grid through converters. The control and operation of such a grid will be unlike anything that has been encountered till now. In this dissertation, the operation and behavior of such a grid will be investigated. The first step in such an analysis will be to build an accurate and simple mathematical model to represent the corresponding components in commercial software. Once this bridge has been crossed, conventional machines will be replaced with their solid state interfaced counterparts in a phased manner. At each stage, attention will be devoted to the control of these sources and also on the stability performance of the large power system.
This dissertation addresses various concerns regarding the control and operation of a futuristic power grid. In addition, this dissertation also aims to address the issue of whether a requirement may arise to redefine operational reliability criteria based on the results obtained.
ContributorsRamasubramanian, Deepak (Author) / Vittal, Vijay (Thesis advisor) / Undrill, John (Committee member) / Ayyanar, Raja (Committee member) / Qin, Jiangchao (Committee member) / Arizona State University (Publisher)
Created2017
Description
This dissertation examines modeling, design and control challenges associatedwith two classes of power converters: a direct current-direct current (DC-DC) step-down (buck)
regulator and a 3-phase (3-ϕ) 4-wire direct current-alternating current
(DC-AC) inverter. These are widely used for power transfer in a variety of industrial
and personal applications. This motivates the precise quantification of conditions
under which existing modeling and design methods yield satisfactory designs, and
the study of alternatives when they don’t. This dissertation describes a method
utilizing Fourier components of the input square wave and the inductor-capacitor (LC)
filter transfer function, which doesn’t require the small ripple approximation. Then,
trade-offs associated with the choice of the filter order are analyzed for integrated buck
converters with a constraint on their chip area. Design specifications which would
justify using a fourth or sixth order filter instead of the widely used second order
one are examined. Next, sampled-data (SD) control of a buck converter is analyzed.
Three methods for the digital controller design are studied: analog design followed
by discretization, direct digital design of a discretized plant, and a “lifting” based
method wherein the sampling time is incorporated in the design process by lifting
the continuous-time design plant before doing the controller design. Specifically,
controller performance is quantified by studying the induced-L2 norm of the closed
loop system for a range of switching/sampling frequencies. In the final segment of
this dissertation, the inner-outer control loop, employed in inverters with an
inductor-capacitor-inductor (LCL) output filter, is studied. Closed loop sensitivities for the
loop broken at the error and the control are examined, demonstrating that traditional
methods only address these properties for one loop-breaking point. New controllers
are then provided for improving both sets of properties.
ContributorsSarkar, Aratrik (Author) / Rodriguez, Armando A (Thesis advisor) / Si, Jennie (Committee member) / Mittelmann, Hans D (Committee member) / Tsakalis, Konstantinos (Committee member) / Arizona State University (Publisher)
Created2021
Description
DC-DC converters are widely employed to interface one voltage level with another through step-up or step-down operation. In recent years, step-up DC-DC converters have been a key component in harnessing energy through renewable sources by providing an interface to integrate low voltage systems to DC-AC converters or microgrids. They find increasing applications in battery and fuel cell electric vehicles which can benefit from high and variable DC link voltage. It is important to optimize these converters for higher efficiency while achieving high gain and high power density. Non-isolated DC-DC converters are an attractive option due to the reduced complexity of magnetic design, smaller size, and lower cost. However, in these topologies, achieving a very high gain along with high efficiency has been a challenge. This work encompasses different non-isolated high gain DC-DC converters for electric vehicle and renewable energy applications. The converter topologies proposed in this work can easily achieve a conversion ratio above 20 with lower voltage and current stress across devices. For applications requiring wide input or output voltage range, different control schemes, as well as modified converter configurations, are proposed. Moreover, the converter performance is optimized by employing wide band-gap devices-based hardware prototypes. It enables higher switching frequency operation with lower switching losses. In recent times, multiple soft-switching techniques have been introduced which enable higher switching frequency operation by minimizing the switching loss. This work also discusses different soft-switching mechanisms for the high conversion ratio converter and the proposed mechanism improves the converter efficiency significantly while reducing the inductor size. Further, a novel electric vehicle traction architecture with low voltage battery and multi-input high gain DC-DC converter is introduced in this work. The proposed architecture with multiple 48 V battery packs and integrated, multi-input, high conversion ratio DC-DC converters, can reduce the maximum voltage in the vehicle during emergencies to 48 V, mitigate cell balancing issues in battery, and provide a wide variable DC link voltage. The implementation of high conversion ratio converter in multiple configurations for the proposed architecture has been discussed in detail and the proposed converter operation is validated experimentally through a scaled hardware prototype.
ContributorsGupta, Ankul (Author) / Ayyanar, Raja (Thesis advisor) / Lei, Qin (Committee member) / Bakkaloglu, Bertan (Committee member) / Ranjram, Mike (Committee member) / Arizona State University (Publisher)
Created2022
Description
This thesis addresses the design and control of three phase inverters. Such inverters are
used to produce three-phase sinusoidal voltages and currents from a DC source. They
are critical for injecting power from renewable energy sources into the grid. This is
especially true since many of these sources of energy are DC sources (e.g. solar
photovoltaic) or need to be stored in DC batteries because they are intermittent (e.g. wind
and solar). Two classes of inverters are examined in this thesis. A control-centric design
procedure is presented for each class. The first class of inverters is simple in that they
consist of three decoupled subsystems. Such inverters are characterized by no mutual
inductance between the three phases. As such, no multivariable coupling is present and
decentralized single-input single-output (SISO) control theory suffices to generate
acceptable control designs. For this class of inverters several families of controllers are
addressed in order to examine command following as well as input disturbance and noise
attenuation specifications. The goal here is to illuminate fundamental tradeoffs. Such
tradeoffs include an improvement in the in-band command following and output
disturbance attenuation versus a deterioration in out-of-band noise attenuation.
A fundamental deficiency associated with such inverters is their large size. This can be
remedied by designing a smaller core. This naturally leads to the second class of inverters
considered in this work. These inverters are characterized by significant mutual
inductances and multivariable coupling. As such, SISO control theory is generally not
adequate and multiple-input multiple-output (MIMO) theory becomes essential for
controlling these inverters.
used to produce three-phase sinusoidal voltages and currents from a DC source. They
are critical for injecting power from renewable energy sources into the grid. This is
especially true since many of these sources of energy are DC sources (e.g. solar
photovoltaic) or need to be stored in DC batteries because they are intermittent (e.g. wind
and solar). Two classes of inverters are examined in this thesis. A control-centric design
procedure is presented for each class. The first class of inverters is simple in that they
consist of three decoupled subsystems. Such inverters are characterized by no mutual
inductance between the three phases. As such, no multivariable coupling is present and
decentralized single-input single-output (SISO) control theory suffices to generate
acceptable control designs. For this class of inverters several families of controllers are
addressed in order to examine command following as well as input disturbance and noise
attenuation specifications. The goal here is to illuminate fundamental tradeoffs. Such
tradeoffs include an improvement in the in-band command following and output
disturbance attenuation versus a deterioration in out-of-band noise attenuation.
A fundamental deficiency associated with such inverters is their large size. This can be
remedied by designing a smaller core. This naturally leads to the second class of inverters
considered in this work. These inverters are characterized by significant mutual
inductances and multivariable coupling. As such, SISO control theory is generally not
adequate and multiple-input multiple-output (MIMO) theory becomes essential for
controlling these inverters.
ContributorsSarkar, Aratrik (Author) / Rodriguez, Armando A. (Thesis advisor) / Si, Jennie (Committee member) / Tsakalis, Konstantinos (Committee member) / Arizona State University (Publisher)
Created2015