Matching Items (4)
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- All Subjects: Power Electronics
- Genre: Doctoral Dissertation
- Creators: Qin, Jiangchao
Description
This thesis investigates different unidirectional topologies for the on-board charger in an electric vehicle and proposes soft-switching solutions in both the AC/DC and DC/DC stage of the converter with a power rating of 3.3 kW. With an overview on different charger topologies and their applicability with respect to the target specification a soft-switching technique to reduce the switching losses of a single phase boost-type PFC is proposed. This work is followed by a modification to the popular soft-switching topology, the dual active bridge (DAB) converter for application requiring unidirectional power flow. The topology named as the semi-dual active bridge (S-DAB) is obtained by replacing the fully active (four switches) bridge on the load side of a DAB by a semi-active (two switches and two diodes) bridge. The operating principles, waveforms in different intervals and expression for power transfer, which differ significantly from the basic DAB topology, are presented in detail. The zero-voltage switching (ZVS) characteristics and requirements are analyzed in detail and compared to those of DAB. A small-signal model of the new configuration is also derived. The analysis and performance of S-DAB are validated through extensive simulation and experimental results from a hardware prototype.
Secondly, a low-loss auxiliary circuit for a power factor correction (PFC) circuit to achieve zero voltage transition is also proposed to improve the efficiency and operating frequency of the converter. The high dynamic energy generated in the switching node during turn-on is diverted by providing a parallel path through an auxiliary inductor and a transistor placed across the main inductor. The paper discusses the operating principles, design, and merits of the proposed scheme with hardware validation on a 3.3 kW/ 500 kHz PFC prototype. Modifications to the proposed zero voltage transition (ZVT) circuit is also investigated by implementing two topological variations. Firstly, an integrated magnetic structure is built combining the main inductor and auxiliary inductor in a single core reducing the total footprint of the circuit board. This improvement also reduces the size of the auxiliary capacitor required in the ZVT operation. The second modification redirects the ZVT energy from the input end to the DC link through additional half-bridge circuit and inductor. The half-bridge operating at constant 50% duty cycle simulates a switching leg of the following DC/DC stage of the converter. A hardware prototype of the above-mentioned PFC and DC/DC stage was developed and the operating principles were verified using the same.
Secondly, a low-loss auxiliary circuit for a power factor correction (PFC) circuit to achieve zero voltage transition is also proposed to improve the efficiency and operating frequency of the converter. The high dynamic energy generated in the switching node during turn-on is diverted by providing a parallel path through an auxiliary inductor and a transistor placed across the main inductor. The paper discusses the operating principles, design, and merits of the proposed scheme with hardware validation on a 3.3 kW/ 500 kHz PFC prototype. Modifications to the proposed zero voltage transition (ZVT) circuit is also investigated by implementing two topological variations. Firstly, an integrated magnetic structure is built combining the main inductor and auxiliary inductor in a single core reducing the total footprint of the circuit board. This improvement also reduces the size of the auxiliary capacitor required in the ZVT operation. The second modification redirects the ZVT energy from the input end to the DC link through additional half-bridge circuit and inductor. The half-bridge operating at constant 50% duty cycle simulates a switching leg of the following DC/DC stage of the converter. A hardware prototype of the above-mentioned PFC and DC/DC stage was developed and the operating principles were verified using the same.
ContributorsKulasekaran, Siddharth (Author) / Ayyanar, Raja (Thesis advisor) / Karady, George G. (Committee member) / Qin, Jiangchao (Committee member) / Lei, Qin (Committee member) / Arizona State University (Publisher)
Created2017
Description
Alternate sources of energy such as wind, solar photovoltaic and fuel cells are coupled to the power grid with the help of solid state converters. Continued deregulation of the power sector coupled with favorable government incentives has resulted in the rapid growth of renewable energy sources connected to the distribution system at a voltage level of 34.5kV or below. Of late, many utilities are also investing in these alternate sources of energy with the point of interconnection with the power grid being at the transmission level. These converter interfaced generation along with their associated control have the ability to provide the advantage of fast control of frequency, voltage, active, and reactive power. However, their ability to provide stability in a large system is yet to be investigated in detail. This is the primary objective of this research.
In the future, along with an increase in the percentage of converter interfaced renewable energy sources connected to the transmission network, there exists a possibility of even connecting synchronous machines to the grid through converters. Thus, all sources of energy can be expected to be coupled to the grid through converters. The control and operation of such a grid will be unlike anything that has been encountered till now. In this dissertation, the operation and behavior of such a grid will be investigated. The first step in such an analysis will be to build an accurate and simple mathematical model to represent the corresponding components in commercial software. Once this bridge has been crossed, conventional machines will be replaced with their solid state interfaced counterparts in a phased manner. At each stage, attention will be devoted to the control of these sources and also on the stability performance of the large power system.
This dissertation addresses various concerns regarding the control and operation of a futuristic power grid. In addition, this dissertation also aims to address the issue of whether a requirement may arise to redefine operational reliability criteria based on the results obtained.
In the future, along with an increase in the percentage of converter interfaced renewable energy sources connected to the transmission network, there exists a possibility of even connecting synchronous machines to the grid through converters. Thus, all sources of energy can be expected to be coupled to the grid through converters. The control and operation of such a grid will be unlike anything that has been encountered till now. In this dissertation, the operation and behavior of such a grid will be investigated. The first step in such an analysis will be to build an accurate and simple mathematical model to represent the corresponding components in commercial software. Once this bridge has been crossed, conventional machines will be replaced with their solid state interfaced counterparts in a phased manner. At each stage, attention will be devoted to the control of these sources and also on the stability performance of the large power system.
This dissertation addresses various concerns regarding the control and operation of a futuristic power grid. In addition, this dissertation also aims to address the issue of whether a requirement may arise to redefine operational reliability criteria based on the results obtained.
ContributorsRamasubramanian, Deepak (Author) / Vittal, Vijay (Thesis advisor) / Undrill, John (Committee member) / Ayyanar, Raja (Committee member) / Qin, Jiangchao (Committee member) / Arizona State University (Publisher)
Created2017
Description
This dissertation covers my doctoral research on the cathodoluminescence (CL) study of the optical properties of III-niride semiconductors.
The first part of this thesis focuses on the optical properties of Mg-doped gallium nitride (GaN:Mg) epitaxial films. GaN is an emerging material for power electronics, especially for high power and high frequency applications. Compared to traditional Si-based devices, GaN-based devices offer superior breakdown properties, faster switching speed, and reduced system size. Some of the current device designs involve lateral p-n junctions which require selective-area doping. Dopant distribution in the selectively-doped regions is a critical issue that can impact the device performance. While most studies on Mg doping in GaN have been reported for epitaxial grown on flat c-plane substrates, questions arise regarding the Mg doping efficiency and uniformity in selectively-doped regions, where growth on surfaces etched away from the exact c-plane orientation is involved. Characterization of doping concentration distribution in lateral structures using secondary ion mass spectroscopy lacks the required spatial resolution. In this work, visualization of acceptor distribution in GaN:Mg epilayers grown by metalorganic chemical vapor deposition (MOCVD) was achieved at sub-micron scale using CL imaging. This was enabled by establishing a correlation among the luminescence characteristics, acceptor concentration, and electrical conductivity of GaN:Mg epilayers. Non-uniformity in acceptor distribution has been observed in epilayers grown on mesa structures and on miscut substrates. It is shown that non-basal-plane surfaces, such as mesa sidewalls and surface step clusters, promotes lateral growth along the GaN basal planes with a reduced Mg doping efficiency. The influence of surface morphology on the Mg doping efficiency in GaN has been studied.
The second part of this thesis focuses on the optical properties of InGaN for photovoltaic applications. The effects of thermal annealing and low energy electron beam irradiation (LEEBI) on the optical properties of MOCVD-grown In0.14Ga0.86N films were studied. A multi-fold increase in luminescence intensity was observed after 800 °C thermal annealing or LEEBI treatment. The mechanism leading to the luminescence intensity increase has been discussed. This study shows procedures that significantly improve the luminescence efficiency of InGaN, which is important for InGaN-based optoelectronic devices.
The first part of this thesis focuses on the optical properties of Mg-doped gallium nitride (GaN:Mg) epitaxial films. GaN is an emerging material for power electronics, especially for high power and high frequency applications. Compared to traditional Si-based devices, GaN-based devices offer superior breakdown properties, faster switching speed, and reduced system size. Some of the current device designs involve lateral p-n junctions which require selective-area doping. Dopant distribution in the selectively-doped regions is a critical issue that can impact the device performance. While most studies on Mg doping in GaN have been reported for epitaxial grown on flat c-plane substrates, questions arise regarding the Mg doping efficiency and uniformity in selectively-doped regions, where growth on surfaces etched away from the exact c-plane orientation is involved. Characterization of doping concentration distribution in lateral structures using secondary ion mass spectroscopy lacks the required spatial resolution. In this work, visualization of acceptor distribution in GaN:Mg epilayers grown by metalorganic chemical vapor deposition (MOCVD) was achieved at sub-micron scale using CL imaging. This was enabled by establishing a correlation among the luminescence characteristics, acceptor concentration, and electrical conductivity of GaN:Mg epilayers. Non-uniformity in acceptor distribution has been observed in epilayers grown on mesa structures and on miscut substrates. It is shown that non-basal-plane surfaces, such as mesa sidewalls and surface step clusters, promotes lateral growth along the GaN basal planes with a reduced Mg doping efficiency. The influence of surface morphology on the Mg doping efficiency in GaN has been studied.
The second part of this thesis focuses on the optical properties of InGaN for photovoltaic applications. The effects of thermal annealing and low energy electron beam irradiation (LEEBI) on the optical properties of MOCVD-grown In0.14Ga0.86N films were studied. A multi-fold increase in luminescence intensity was observed after 800 °C thermal annealing or LEEBI treatment. The mechanism leading to the luminescence intensity increase has been discussed. This study shows procedures that significantly improve the luminescence efficiency of InGaN, which is important for InGaN-based optoelectronic devices.
ContributorsLiu, Hanxiao (Author) / Ponce, Fernando A. (Thesis advisor) / Zhao, Yuji (Committee member) / Newman, Nathan (Committee member) / Fischer, Alec M (Committee member) / Arizona State University (Publisher)
Created2020
Description
This dissertation covers three primary topics and relates them in context. High frequency transformer design, microgrid modeling and control, and converter design as it pertains to the other topics are each investigated, establishing a summary of the state-of-the-art at the intersection of the three as a baseline. The culminating work produced by the confluence of these topics is a novel modular solid-state transformer (SST) design, featuring an array of dual active bridge (DAB) converters, each of which contains an optimized high-frequency transformer, and an array of grid-forming inverters (GFI) suitable for centralized control in a microgrid environment. While no hardware was produced for this design, detailed modeling and simulation has been completed, and results are contextualized by rigorous analysis and comparison with results from published literature. The main contributions to each topic are best presented by topic area. For transformers, contributions include collation and presentation of the best-known methods of minimum loss high-frequency transformer design and analysis, descriptions of the implementation of these methods into a unified design script as well as access to an example of such a script, and the derivation and presentation of novel tools for analysis of multi-winding and multi-frequency transformers. For microgrid modeling and control, contributions include the modeling and simulation validation of the GFI and SST designs via state space modeling in a multi-scale simulation framework, as well as demonstration of stable and effective participation of these models in a centralized control scheme under phase imbalance. For converters, the SST design, analysis, and simulation are the primary contributions, though several novel derivations and analysis tools are also presented for the asymmetric half bridge and DAB.
ContributorsMongrain, Robert Scott (Author) / Ayyanar, Raja (Thesis advisor) / Pan, George (Committee member) / Qin, Jiangchao (Committee member) / Lei, Qin (Committee member) / Arizona State University (Publisher)
Created2019