Matching Items (5)
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- All Subjects: RRAM
- All Subjects: Zirconium--Magnetic properties.
- Creators: Yu, Shimeng
Description
Soft magnetic materials have been studied extensively in the recent past due to their applications in micro-transformers, micro-inductors, spin dependent memories etc. The unique features of these materials are the high frequency operability and high magnetic anisotropy. High uniaxial anisotropy is one of the most important properties for these materials. There are many methods to achieve high anisotropy energy (Hk) which include sputtering with presence of magnetic field, exchange bias and oblique angle sputtering.
This research project focuses on analyzing different growth techniques of thin films of Cobalt, Zirconium Tantalum Boron (CZTB) and the quality of the films resulted. The measurements include magnetic moment measurements using a Vibrating Sample Magnetometer, electrical measurements using 4 point resistivity methods and structural characterization using Scanning Electron Microscopy. Subtle changes in the growth mechanism result in different properties of these films and they are most suited for certain applications.
The growth methods presented in this research are oblique angled sputtering with localized magnetic field and oblique sputtering without presence of magnetic field. The uniaxial anisotropy can be controlled by changing the angle during sputtering. The resulting film of CZTB is tested for magnetic anisotropy and soft magnetism at room temperature by using Lakeshore 7500 Vibrating Sample Magnetometer. The results are presented, analyzed and explained using characterization techniques. Future work includes magnetic field presence during deposition, magnetic devices of this film with giga hertz range operating frequencies.
This research project focuses on analyzing different growth techniques of thin films of Cobalt, Zirconium Tantalum Boron (CZTB) and the quality of the films resulted. The measurements include magnetic moment measurements using a Vibrating Sample Magnetometer, electrical measurements using 4 point resistivity methods and structural characterization using Scanning Electron Microscopy. Subtle changes in the growth mechanism result in different properties of these films and they are most suited for certain applications.
The growth methods presented in this research are oblique angled sputtering with localized magnetic field and oblique sputtering without presence of magnetic field. The uniaxial anisotropy can be controlled by changing the angle during sputtering. The resulting film of CZTB is tested for magnetic anisotropy and soft magnetism at room temperature by using Lakeshore 7500 Vibrating Sample Magnetometer. The results are presented, analyzed and explained using characterization techniques. Future work includes magnetic field presence during deposition, magnetic devices of this film with giga hertz range operating frequencies.
ContributorsTummalapalli, Sridutt (Author) / Yu, Hongbin (Thesis advisor) / Jiang, Hanqing (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2015
Description
Resistive Random Access Memory (RRAM) is an emerging type of non-volatile memory technology that seeks to replace FLASH memory. The RRAM crossbar array is advantageous in its relatively small cell area and faster read latency in comparison to NAND and NOR FLASH memory; however, the crossbar array faces design challenges of its own in sneak-path currents that prevent proper reading of memory stored in the RRAM cell. The Current Sensing Amplifier is one method of reading RRAM crossbar arrays. HSpice simulations are used to find the associated reading delays of the Current Sensing Amplifier with respect to various sizes of RRAM crossbar arrays, as well as the largest array size compatible for accurate reading. It is found that up to 1024x1024 arrays are achievable with a worst-case read delay of 815ps, and it is further likely 2048x2048 arrays are able to be read using the Current Sensing Amplifier. In comparing the Current Sensing Amplifier latency results with previously obtained latency results from the Voltage Sensing Amplifier, it is shown that the Voltage Sensing Amplifier reads arrays in sizes up to 256x256 faster while the Current Sensing Amplifier reads larger arrays faster.
ContributorsMoore, Jenna Barber (Author) / Yu, Shimeng (Thesis director) / Liu, Rui (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
Description
The Programmable Metallization Cell (PMC) is a novel solid-state resistive switching technology. It has a simple metal-insulator-metal “MIM” structure with one metal being electrochemically active (Cu) and the other one being inert (Pt or W), an insulating film (silica) acts as solid electrolyte for ion transport is sandwiched between these two electrodes. PMC’s resistance can be altered by an external electrical stimulus. The change of resistance is attributed to the formation or dissolution of Cu metal filament(s) within the silica layer which is associated with electrochemical redox reactions and ion transportation. In this dissertation, a comprehensive study of microfabrication method and its impacts on performance of PMC device is demonstrated, gamma-ray total ionizing dose (TID) impacts on device reliability is investigated, and the materials properties of doped/undoped silica switching layers are illuminated by impedance spectroscopy (IS). Due to the inherent CMOS compatibility, Cu-silica PMCs have great potential to be adopted in many emerging technologies, such as non-volatile storage cells and selector cells in ultra-dense 3D crosspoint memories, as well as electronic synapses in brain-inspired neuromorphic computing. Cu-silica PMC device performance for these applications is also assessed in this dissertation.
ContributorsChen, Wenhao (Author) / Kozicki, Michael N (Thesis advisor) / Barnaby, Hugh J (Thesis advisor) / Yu, Shimeng (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2017
Description
RRAM is an emerging technology that looks to replace FLASH NOR and possibly NAND memory. It is attractive because it uses an adjustable resistance and does not rely on charge; in the sub-10nm feature size circuitry this is critical. However, RRAM cross-point arrays suffer tremendously from leakage currents that prevent proper readings in larger array sizes. In this research an exponential IV selector was added to each cell to minimize this current. Using this technique the largest array-size supportable was determined to be 512x512 cells using the conventional voltage sense amplifier by HSPICE simulations. However, with the increase in array size, the sensing latency also remarkably increases due to more sneak path currents, approaching 873 ns for the 512x512 array.
ContributorsMadler, Ryan Anton (Author) / Yu, Shimeng (Thesis director) / Cao, Yu (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
Description
While SPICE circuit simulation software gives researchers and industry accurate information regarding the behavior and characteristics of circuits, the auditory effect of SPICE circuit simulation on audio circuits is not well documented. This project takes a thoroughly analyzed and popular audio effect circuit called the Ibanez Tubescreamer and simulates its distortion effect on a .wav file in order to hear the effect of SPICE simulation. Specifically, the TS-808 schematic is drawn in the SPICE program LTSPICE and simulated using generated sinusoids and recorded .wav files. Specific components are imported using .MODEL and .SUBCKT to accurately represent the diodes, bipolar transistors, op amps, and other components in order to hear how each component affects the response. Various transient responses are extracted as .wav files and assembled as figures in order to characterize the result of the circuit on the input. Once the actual circuit is built and debugged, all of the same transient analysis is applied and then compared to the SPICE simulation figures gathered in the digital simulation. These results are then compared along with a subjective hearing test of the digital simulation and analog circuit in order to test the validity of the SPICE simulations. The digital simulations reveal that the distortion follows the signature characteristics of Ibanez Tubescreamer which shows that SPICE simulation will give insight into the real effects of audio circuits modeled in SPICE programs. Diodes--such as Silicon, Germanium, Zener, Red LEDs and Blue LEDs--can dramatically change the waveforms and sound of the inputs within the circuit where as the Op-amps--such as the JRC4558, TL072, and NE5532--have little to no effect on the waveforms and subjective effects on the output .wav files. After building the circuit and hearing the difference between the analog circuit and digital simulation, the differences between the two are apparent but very similar in nature--proving that the SPICE simulation can give meaningful insight into the sound of the actual analog circuit. Some of the differences can be explained by the variance of equipment and environment used in recording and playback. Since this project did not use high fidelity audio recording equipment and consistency in the equipment used for playback, it is uncertain if the simulation and actual circuit could be classified as completely accurate. Any further work on the project would be recording and playing back in a constant environment and looking into a wider range of specific components instead of looking into one permutation.
ContributorsMacias, Cole Thomas (Author) / Goryll, Michael (Thesis director) / Yu, Shimeng (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2015-12