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ContributorsDaval, Charles (Performer) / ASU Library. Music Library (Publisher)
Created2018-03-26
Description
Analysing and measuring of biological or biochemical processes are of utmost importance for medical, biological and biotechnological applications. Point of care diagnostic system, composing of biosensors, have promising applications for providing cheap, accurate and portable diagnosis. Owing to these expanding medical applications and advances made by semiconductor industry biosensors have seen a tremendous growth in the past few decades. Also emergence of microfluidics and non-invasive biosensing applications are other marker propellers. Analyzing biological signals using transducers is difficult due to the challenges in interfacing an electronic system to the biological environment. Detection limit, detection time, dynamic range, specificity to the analyte, sensitivity and reliability of these devices are some of the challenges in developing and integrating these devices. Significant amount of research in the field of biosensors has been focused on improving the design, fabrication process and their integration with microfluidics to address these challenges. This work presents new techniques, design and systems to improve the interface between the electronic system and the biological environment. This dissertation uses CMOS circuit design to improve the reliability of these devices. Also this work addresses the challenges in designing the electronic system used for processing the output of the transducer, which converts biological signal into electronic signal.
ContributorsShah, Sahil S (Author) / Christen, Jennifer B (Thesis advisor) / Allee, David (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2014
DescriptionThe purpose of this project is to explore the influence of folk music in guitar compositions by Manuel Ponce from 1923 to 1932. It focuses on his Tres canciones populares mexicanas and Tropico and Rumba.
ContributorsGarcia Santos, Arnoldo (Author) / Koonce, Frank (Thesis advisor) / Rogers, Rodney (Committee member) / Rotaru, Catalin (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis investigated two different thermal flow sensors for intravascular shear stress analysis. They were based on heat transfer principle, which heat convection from the resistively heated element to the flowing fluid was measured as a function of the changes in voltage. For both sensors, the resistively heated elements were made of Ti/Pt strips with the thickness 0.12 µm and 0.02 µm. The resistance of the sensing element was measured at approximately 1.6-1.7 kohms;. A linear relation between the resistance and temperature was established over the temperature ranging from 22 degree Celsius to 80 degree Celsius and the temperature coefficient of resistance (TCR) was at approximately 0.12 %/degree Celsius. The first thermal flow sensor was one-dimensional (1-D) flexible shear stress sensor. The structure was sensing element sandwiched by a biocompatible polymer "poly-para-xylylene", also known as Parylene, which provided both insulation of electrodes and flexibility of the sensors. A constant-temperature (CT) circuit was designed as the read out circuit based on 0.6 µm CMOS (Complementary metal-oxide-semiconductor) process. The 1-D shear stress sensor suffered from a large measurement error. Because when the sensor was inserted into blood vessels, it was impossible to mount the sensor to the wall as calibrated in micro fluidic channels. According to the previous simulation work, the shear stress was varying and the sensor itself changed the shear stress distribution. We proposed a three-dimensional (3-D) thermal flow sensor, with three-axis of sensing elements integrated in one sensor. It was in the similar shape as a hexagonal prism with diagonal of 1000 µm. On the top of the sensor, there were five bond pads for external wires over 500 µm thick silicon substrate. In each nonadjacent side surface, there was a bended parylene branch with one sensing element. Based on the unique 3-D structure, the sensor was able to obtain data along three axes. With computational fluid dynamics (CFD) model, it is possible to locate the sensor in the blood vessels and give us a better understanding of shear stress distribution in the presence of time-varying component of blood flow and realize more accurate assessment of intravascular convective heat transfer.
ContributorsTang, Rui (Author) / Yu, Hongyu (Thesis advisor) / Jiang, Hanqing (Committee member) / Pan, George (Committee member) / Arizona State University (Publisher)
Created2011
ContributorsKotronakis, Dimitris (Performer) / ASU Library. Music Library (Publisher)
Created2018-03-01
ContributorsDavin, Colin (Performer) / ASU Library. Music Library (Publisher)
Created2018-10-05
Description
A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors.
Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.
Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.
Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.
Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.
ContributorsMarrs, Michael (Author) / Raupp, Gregory B (Thesis advisor) / Allee, David R. (Committee member) / Dai, Lenore L (Committee member) / Forzani, Erica S (Committee member) / Bawolek, Edward J (Committee member) / Arizona State University (Publisher)
Created2016
ContributorsSanchez, Armand (Performer) / Nordstrom, Nathan (Performer) / Roubison, Ryan (Performer) / ASU Library. Music Library (Publisher)
Created2018-04-13
ContributorsChan, Robbie (Performer) / McCarrel, Kyla (Performer) / Sadownik, Stephanie (Performer) / ASU Library. Music Library (Contributor)
Created2018-04-18