Matching Items (6)
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- All Subjects: Voltage regulators
- Creators: Bakkaloglu, Bertan
- Status: Published
Description
Modern day deep sub-micron SOC architectures often demand very low supply noise levels. As supply voltage decreases with decreasing deep sub-micron gate length, noise on the power supply starts playing a dominant role in noise-sensitive analog blocks, especially high precision ADC, PLL, and RF SOC's. Most handheld and portable applications and highly sensitive medical instrumentation circuits tend to use low noise regulators as on-chip or on board power supply. Nonlinearities associated with LNA's, mixers and oscillators up-convert low frequency noise with the signal band. Specifically, synthesizer and TCXO phase noise, LNA and mixer noise figure, and adjacent channel power ratios of the PA are heavily influenced by the supply noise and ripple. This poses a stringent requirement on a very low noise power supply with high accuracy and fast transient response. Low Dropout (LDO) regulators are preferred over switching regulators for these applications due to their attractive low noise and low ripple features. LDO's shield sensitive blocks from high frequency fluctuations on the power supply while providing high accuracy, fast response supply regulation.
This research focuses on developing innovative techniques to reduce the noise of any generic wideband LDO, stable with or without load capacitor. The proposed techniques include Switched RC Filtering to reduce the Bandgap Reference noise, Current Mode Chopping to reduce the Error Amplifier noise & MOS-R based RC filter to reduce the noise due to bias current. The residual chopping ripple was reduced using a Switched Capacitor notch filter. Using these techniques, the integrated noise of a wideband LDO was brought down to 15µV in the integration band of 10Hz to 100kHz. These techniques can be integrated into any generic LDO without any significant area overhead.
This research focuses on developing innovative techniques to reduce the noise of any generic wideband LDO, stable with or without load capacitor. The proposed techniques include Switched RC Filtering to reduce the Bandgap Reference noise, Current Mode Chopping to reduce the Error Amplifier noise & MOS-R based RC filter to reduce the noise due to bias current. The residual chopping ripple was reduced using a Switched Capacitor notch filter. Using these techniques, the integrated noise of a wideband LDO was brought down to 15µV in the integration band of 10Hz to 100kHz. These techniques can be integrated into any generic LDO without any significant area overhead.
ContributorsMagod Ramakrishna, Raveesh (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
Power management plays a very important role in the current electronics industry. Battery powered and handheld applications require novel power management techniques to extend the battery life. Most systems have multiple voltage regulators to provide power sources to the different circuit blocks and/or sub-systems. Some of these voltage regulators are low dropout regulators (LDOs) which typically require output capacitors in the range of 1's to 10's of µF. The necessity of output capacitors occupies valuable board space and can add additional integrated circuit (IC) pin count. A high IC pin count can restrict LDOs for system-on-chip (SoC) solutions. The presented research gives the user an option with regard to the external capacitor; the output capacitor can range from 0 - 1µF for a stable response. In general, the larger the output capacitor, the better the transient response. Because the output capacitor requirement is such a wide range, the LDO presented here is ideal for any application, whether it be for a SoC solution or stand-alone LDO that desires a filtering capacitor for optimal transient performance. The LDO architecture and compensation scheme provide a stable output response from 1mA to 200mA with output capacitors in the range of 0 - 1µF. A 2.5V, 200mA any-cap LDO was fabricated in a proprietary 1.5µm BiCMOS process, consuming 200µA of ground pin current (at 1mA load) with a dropout voltage of 250mV. Experimental results show that the proposed any-cap LDO exceeds transient performance and output capacitor requirements compared to previously published work. The architecture also has excellent line and load regulation and less sensitive to process variation. Therefore, the presented any-cap LDO is ideal for any application with a maximum supply rail of 5V.
ContributorsTopp, Matthew (Author) / Bakkaloglu, Bertan (Thesis advisor) / Thornton, Trevor (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012
Description
The modern era of consumer electronics is dominated by compact, portable, affordable smartphones and wearable computing devices. Power management integrated circuits (PMICs) play a crucial role in on-chip power management, extending battery life and efficiency of integrated analog, radio-frequency (RF), and mixed-signal cores. Low-dropout (LDO) regulators are commonly used to provide clean supply for low voltage integrated circuits, where point-of-load regulation is important. In System-On-Chip (SoC) applications, digital circuits can change their mode of operation regularly at a very high speed, imposing various load transient conditions for the regulator. These quick changes of load create a glitch in LDO output voltage, which hamper performance of the digital circuits unfavorably. For an LDO designer, minimizing output voltage variation and speeding up voltage glitch settling is an important task.
The presented research introduces two fully integrated LDO voltage regulators for SoC applications. N-type Metal-Oxide-Semiconductor (NMOS) power transistor based operation achieves high bandwidth owing to the source follower configuration of the regulation loop. A low input impedance and high output impedance error amplifier ensures wide regulation loop bandwidth and high gain. Current-reused dynamic biasing technique has been employed to increase slew-rate at the gate of power transistor during full-load variations, by a factor of two. Three design variations for a 1-1.8 V, 50 mA NMOS LDO voltage regulator have been implemented in a 180 nm Mixed-mode/RF process. The whole LDO core consumes 0.130 mA of nominal quiescent ground current at 50 mA load and occupies 0.21 mm x mm. LDO has a dropout voltage of 200 mV and is able to recover in 30 ns from a 65 mV of undershoot for 0-50 pF of on-chip load capacitance.
The presented research introduces two fully integrated LDO voltage regulators for SoC applications. N-type Metal-Oxide-Semiconductor (NMOS) power transistor based operation achieves high bandwidth owing to the source follower configuration of the regulation loop. A low input impedance and high output impedance error amplifier ensures wide regulation loop bandwidth and high gain. Current-reused dynamic biasing technique has been employed to increase slew-rate at the gate of power transistor during full-load variations, by a factor of two. Three design variations for a 1-1.8 V, 50 mA NMOS LDO voltage regulator have been implemented in a 180 nm Mixed-mode/RF process. The whole LDO core consumes 0.130 mA of nominal quiescent ground current at 50 mA load and occupies 0.21 mm x mm. LDO has a dropout voltage of 200 mV and is able to recover in 30 ns from a 65 mV of undershoot for 0-50 pF of on-chip load capacitance.
ContributorsDesai, Chirag (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2016
Description
State of art modern System-On-Chip architectures often require very low noise supplies without overhead on high efficiencies. Low noise supplies are especially important in noise sensitive analog blocks such as high precision Analog-to-Digital Converters, Phase Locked Loops etc., and analog signal processing blocks. Switching regulators, while providing high efficiency power conversion suffer from inherent ripple on their output. A typical solution for high efficiency low noise supply is to cascade switching regulators with Low Dropout linear regulators (LDO) which generate inherently quiet supplies. The switching frequencies of switching regulators keep scaling to higher values in order to reduce the sizes of the passive inductor and capacitors at the output of switching regulators. This poses a challenge for existing solutions of switching regulators followed by LDO since the Power Supply Rejection (PSR) of LDOs are band-limited. In order to achieve high PSR over a wideband, the penalty would be to increase the quiescent power consumed to increase the bandwidth of the LDO and increase in solution area of the LDO. Hence, an alternative to the existing approach is required which improves the ripple cancellation at the output of switching regulator while overcoming the deficiencies of the LDO.
This research focuses on developing an innovative technique to cancel the ripple at the output of switching regulator which is scalable across a wide range of switching frequencies. The proposed technique consists of a primary ripple canceller and an auxiliary ripple canceller, both of which facilitate in the generation of a quiet supply and help to attenuate the ripple at the output of buck converter by over 22dB. These techniques can be applied to any DC-DC converter and are scalable across frequency, load current, output voltage as compared to LDO without significant overhead on efficiency or area. The proposed technique also presents a fully integrated solution without the need of additional off-chip components which, considering the push for full-integration of Power Management Integrated Circuits, is a big advantage over using LDOs.
This research focuses on developing an innovative technique to cancel the ripple at the output of switching regulator which is scalable across a wide range of switching frequencies. The proposed technique consists of a primary ripple canceller and an auxiliary ripple canceller, both of which facilitate in the generation of a quiet supply and help to attenuate the ripple at the output of buck converter by over 22dB. These techniques can be applied to any DC-DC converter and are scalable across frequency, load current, output voltage as compared to LDO without significant overhead on efficiency or area. The proposed technique also presents a fully integrated solution without the need of additional off-chip components which, considering the push for full-integration of Power Management Integrated Circuits, is a big advantage over using LDOs.
ContributorsJoshi, Kishan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2016
Description
Switching regulator has several advantages over linear regulator, but the drawback of switching regulator is ripple voltage on output. Previously people use LDO following a buck converter and multi-phase buck converter to reduce the output voltage ripple. However, these two solutions also have obvious drawbacks and limitations.
In this thesis, a novel mixed signal adaptive ripple cancellation technique is presented. The idea is to generate an artificial ripple current with the same amplitude as inductor current ripple but opposite phase that has high linearity tracking behavior. To generate the artificial triangular current, duty cycle information and inductor current ripple amplitude information are needed. By sensing switching node SW, the duty cycle information can be obtained; by using feedback the amplitude of the artificial ripple current can be regulated. The artificial ripple current cancels out the inductor current, and results in a very low ripple output current flowing to load. In top level simulation, 19.3dB ripple rejection can be achieved.
In this thesis, a novel mixed signal adaptive ripple cancellation technique is presented. The idea is to generate an artificial ripple current with the same amplitude as inductor current ripple but opposite phase that has high linearity tracking behavior. To generate the artificial triangular current, duty cycle information and inductor current ripple amplitude information are needed. By sensing switching node SW, the duty cycle information can be obtained; by using feedback the amplitude of the artificial ripple current can be regulated. The artificial ripple current cancels out the inductor current, and results in a very low ripple output current flowing to load. In top level simulation, 19.3dB ripple rejection can be achieved.
ContributorsYang, Zhe (Author) / Bakkaloglu, Bertan (Thesis advisor) / Seo, Jae-Sun (Committee member) / Lei, Qin (Committee member) / Arizona State University (Publisher)
Created2016
Description
Readout Integrated Circuits(ROICs) are important components of infrared(IR) imag
ing systems. Performance of ROICs affect the quality of images obtained from IR
imaging systems. Contemporary infrared imaging applications demand ROICs that
can support large dynamic range, high frame rate, high output data rate, at low
cost, size and power. Some of these applications are military surveillance, remote
sensing in space and earth science missions and medical diagnosis. This work focuses
on developing a ROIC unit cell prototype for National Aeronautics and Space Ad
ministration(NASA), Jet Propulsion Laboratory’s(JPL’s) space applications. These
space applications also demand high sensitivity, longer integration times(large well
capacity), wide operating temperature range, wide input current range and immunity
to radiation events such as Single Event Latchup(SEL).
This work proposes a digital ROIC(DROIC) unit cell prototype of 30ux30u size,
to be used mainly with NASA JPL’s High Operating Temperature Barrier Infrared
Detectors(HOT BIRDs). Current state of the art DROICs achieve a dynamic range
of 16 bits using advanced 65-90nm CMOS processes which adds a lot of cost overhead.
The DROIC pixel proposed in this work uses a low cost 180nm CMOS process and
supports a dynamic range of 20 bits operating at a low frame rate of 100 frames per
second(fps), and a dynamic range of 12 bits operating at a high frame rate of 5kfps.
The total electron well capacity of this DROIC pixel is 1.27 billion electrons, enabling
integration times as long as 10ms, to achieve better dynamic range. The DROIC unit
cell uses an in-pixel 12-bit coarse ADC and an external 8-bit DAC based fine ADC.
The proposed DROIC uses layout techniques that make it immune to radiation up to
300krad(Si) of total ionizing dose(TID) and single event latch-up(SEL). It also has a
wide input current range from 10pA to 1uA and supports detectors operating from
Short-wave infrared (SWIR) to longwave infrared (LWIR) regions.
ing systems. Performance of ROICs affect the quality of images obtained from IR
imaging systems. Contemporary infrared imaging applications demand ROICs that
can support large dynamic range, high frame rate, high output data rate, at low
cost, size and power. Some of these applications are military surveillance, remote
sensing in space and earth science missions and medical diagnosis. This work focuses
on developing a ROIC unit cell prototype for National Aeronautics and Space Ad
ministration(NASA), Jet Propulsion Laboratory’s(JPL’s) space applications. These
space applications also demand high sensitivity, longer integration times(large well
capacity), wide operating temperature range, wide input current range and immunity
to radiation events such as Single Event Latchup(SEL).
This work proposes a digital ROIC(DROIC) unit cell prototype of 30ux30u size,
to be used mainly with NASA JPL’s High Operating Temperature Barrier Infrared
Detectors(HOT BIRDs). Current state of the art DROICs achieve a dynamic range
of 16 bits using advanced 65-90nm CMOS processes which adds a lot of cost overhead.
The DROIC pixel proposed in this work uses a low cost 180nm CMOS process and
supports a dynamic range of 20 bits operating at a low frame rate of 100 frames per
second(fps), and a dynamic range of 12 bits operating at a high frame rate of 5kfps.
The total electron well capacity of this DROIC pixel is 1.27 billion electrons, enabling
integration times as long as 10ms, to achieve better dynamic range. The DROIC unit
cell uses an in-pixel 12-bit coarse ADC and an external 8-bit DAC based fine ADC.
The proposed DROIC uses layout techniques that make it immune to radiation up to
300krad(Si) of total ionizing dose(TID) and single event latch-up(SEL). It also has a
wide input current range from 10pA to 1uA and supports detectors operating from
Short-wave infrared (SWIR) to longwave infrared (LWIR) regions.
ContributorsPraveen, Subramanya Chilukuri (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kitchen, Jennifer (Committee member) / Long, Yu (Committee member) / Arizona State University (Publisher)
Created2019