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Protection of Flash Memory in the Space Environment

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This is a test plan document for Team Aegis' capstone project that has the goal of mitigating single event upsets in NAND flash memory caused by space radiation.

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2021-05

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Accuracy of Error Correction Code and Regression Analysis within a Python Software

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In collaboration with Moog Broad Reach and Arizona State University, a<br/>team of five undergraduate students designed a hardware design solution for<br/>protecting flash memory data in a spaced-based radioactive environment. Team<br/>Aegis have been working on the research, design, and implementation of

In collaboration with Moog Broad Reach and Arizona State University, a<br/>team of five undergraduate students designed a hardware design solution for<br/>protecting flash memory data in a spaced-based radioactive environment. Team<br/>Aegis have been working on the research, design, and implementation of a<br/>Verilog- and Python-based error correction code using a Reed-Solomon method<br/>to identify bit changes of error code. For an additional senior design project, a<br/>Python code was implemented that runs statistical analysis to identify whether<br/>the error correction code is more effective than a triple-redundancy check as well<br/>as determining if the presence of errors can be modeled by a regression model.

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2021-05

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Response of metal structures on chalcogenide thin films to thermal, ultraviolet and microwave processing

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Microwave (MW), thermal, and ultraviolet (UV) annealing were used to explore the response of Ag structures on a Ge-Se chalcogenide glass (ChG) thin film as flexible radiation sensors, and Te-Ti chalcogenide thin films as a material for diffusion barriers in

Microwave (MW), thermal, and ultraviolet (UV) annealing were used to explore the response of Ag structures on a Ge-Se chalcogenide glass (ChG) thin film as flexible radiation sensors, and Te-Ti chalcogenide thin films as a material for diffusion barriers in microelectronics devices and processing of metallized Cu. Flexible resistive radiation sensors consisting of Ag electrodes on a Ge20Se80 ChG thin film and polyethylene naphthalate substrate were exposed to UV radiation. The sensors were mounted on PVC tubes of varying radii to induce bending strains and annealed under ambient conditions up to 150 oC. Initial sensor resistance was measured to be ~1012 Ω; after exposure to UV radiation, the resistance was ~104 Ω. Bending strain and low temperature annealing had no significant effect on the resistance of the sensors. Samples of Cu on Te-Ti thin films were annealed in vacuum for up to 30 minutes and were stable up to 500 oC as revealed using Rutherford backscattering spectrometry (RBS) and four-point-probe analysis. X-ray diffractometry (XRD) indicates Cu grain growth up to 500 oC and phase instability of the Te-Ti barrier at 600 oC. MW processing was performed in a 2.45-GHz microwave cavity on Cu/Te-Ti films for up to 30 seconds to induce oxide growth. Using a calibrated pyrometer above the sample, the temperature of the MW process was measured to be below a maximum of 186 oC. Four-point-probe analysis shows an increase in resistance with an increase in MW time. XRD indicates growth of CuO on the sample surface. RBS suggests oxidation throughout the Te-Ti film. Additional samples were exposed to 907 J/cm2 UV radiation in order to ensure other possible electromagnetically induced mechanisms were not active. There were no changes observed using XRD, RBS or four point probing.

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2013