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- Creators: Arizona State University
- Creators: Kozicki, Michael
- Resource Type: Text
- Status: Published
Description
Microwave (MW), thermal, and ultraviolet (UV) annealing were used to explore the response of Ag structures on a Ge-Se chalcogenide glass (ChG) thin film as flexible radiation sensors, and Te-Ti chalcogenide thin films as a material for diffusion barriers in microelectronics devices and processing of metallized Cu. Flexible resistive radiation sensors consisting of Ag electrodes on a Ge20Se80 ChG thin film and polyethylene naphthalate substrate were exposed to UV radiation. The sensors were mounted on PVC tubes of varying radii to induce bending strains and annealed under ambient conditions up to 150 oC. Initial sensor resistance was measured to be ~1012 Ω; after exposure to UV radiation, the resistance was ~104 Ω. Bending strain and low temperature annealing had no significant effect on the resistance of the sensors. Samples of Cu on Te-Ti thin films were annealed in vacuum for up to 30 minutes and were stable up to 500 oC as revealed using Rutherford backscattering spectrometry (RBS) and four-point-probe analysis. X-ray diffractometry (XRD) indicates Cu grain growth up to 500 oC and phase instability of the Te-Ti barrier at 600 oC. MW processing was performed in a 2.45-GHz microwave cavity on Cu/Te-Ti films for up to 30 seconds to induce oxide growth. Using a calibrated pyrometer above the sample, the temperature of the MW process was measured to be below a maximum of 186 oC. Four-point-probe analysis shows an increase in resistance with an increase in MW time. XRD indicates growth of CuO on the sample surface. RBS suggests oxidation throughout the Te-Ti film. Additional samples were exposed to 907 J/cm2 UV radiation in order to ensure other possible electromagnetically induced mechanisms were not active. There were no changes observed using XRD, RBS or four point probing.
ContributorsRoos, Benjamin, 1990- (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
New technologies enable the exploration of space, high-fidelity defense systems, lighting fast intercontinental communication systems as well as medical technologies that extend and improve patient lives. The basis for these technologies is high reliability electronics devised to meet stringent design goals and to operate consistently for many years deployed in the field. An on-going concern for engineers is the consequences of ionizing radiation exposure, specifically total dose effects. For many of the different applications, there is a likelihood of exposure to radiation, which can result in device degradation and potentially failure. While the total dose effects and the resulting degradation are a well-studied field and methodologies to help mitigate degradation have been developed, there is still a need for simulation techniques to help designers understand total dose effects within their design. To that end, the work presented here details simulation techniques to analyze as well as predict the total dose response of a circuit. In this dissertation the total dose effects are broken into two sub-categories, intra-device and inter-device effects in CMOS technology. Intra-device effects degrade the performance of both n-channel and p-channel transistors, while inter-device effects result in loss of device isolation. In this work, multiple case studies are presented for which total dose degradation is of concern. Through the simulation techniques, the individual device and circuit responses are modeled post-irradiation. The use of these simulation techniques by circuit designers allow predictive simulation of total dose effects, allowing focused design changes to be implemented to increase radiation tolerance of high reliability electronics.
ContributorsSchlenvogt, Garrett (Author) / Barnaby, Hugh (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2014
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
Description
A relatively simple subset of nanotechnology - nanofluids - can be obtained by adding nanoparticles to conventional base fluids. The promise of these fluids stems from the fact that relatively low particle loadings (typically <1% volume fractions) can significantly change the properties of the base fluid. This research explores how low volume fraction nanofluids, composed of common base-fluids, interact with light energy. Comparative experimentation and modeling reveals that absorbing light volumetrically (i.e. in the depth of the fluid) is fundamentally different from surface-based absorption. Depending on the particle material, size, shape, and volume fraction, a fluid can be changed from being mostly transparent to sunlight (in the case of water, alcohols, oils, and glycols) to being a very efficient volumetric absorber of sunlight. This research also visualizes, under high levels of irradiation, how nanofluids undergo interesting, localized phase change phenomena. For this, images were taken of bubble formation and boiling in aqueous nanofluids heated by a hot wire and by a laser. Infrared thermography was also used to quantify this phenomenon. Overall, though, this research reveals the possibility for novel solar collectors in which the working fluid directly absorbs light energy and undergoes phase change in a single step. Modeling results indicate that these improvements can increase a solar thermal receiver's efficiency by up to 10%.
ContributorsTaylor, Robert (Author) / Phelan, Patrick E (Thesis advisor) / Adrian, Ronald (Committee member) / Trimble, Steve (Committee member) / Posner, Jonathan (Committee member) / Maracas, George (Committee member) / Arizona State University (Publisher)
Created2011
Description
Plasmon resonance in nanoscale metallic structures has shown its ability to concentrate electromagnetic energy into sub-wavelength volumes. Metal nanostructures exhibit a high extinction coefficient in the visible and near infrared spectrum due to their large absorption and scattering cross sections corresponding to their surface plasmon resonance. Hence, they can serve as an attractive candidate for solar energy conversion. Recent papers have showed that dielectric core/metallic shell nanoparticles yielded a plasmon resonance wavelength tunable from visible to infrared by changing the ratio of core radius to the total radius. Therefore it is interesting to develop a dispersion of core-shell multifunctional nanoparticles capable of dynamically changing their volume ratio and thus their spectral radiative properties. Nanoparticle suspensions (nanofluids) are known to offer a variety of benefits for thermal transport and energy conversion. Nanofluids have been proven to increase the efficiency of the photo-thermal energy conversion process in direct solar absorption collectors (DAC). Combining these two cutting-edge technologies enables the use of core-shell nanoparticles to control the spectral and radiative properties of plasmonic nanofluids in order to efficiently harvest and convert solar energy. Plasmonic nanofluids that have strong energy concentrating capacity and spectral selectivity can be used in many high-temperature energy systems where radiative heat transport is essential. In this thesis，the surface plasmon resonance effect and the wavelength tuning ranges for different metallic shell nanoparticles are investigated, the solar-weighted efficiencies of corresponding core-shell nanoparticle suspensions are explored, and a quantitative study of core-shell nanoparticle suspensions in a DAC system is provided. Using core-shell nanoparticle dispersions, it is possible to create efficient spectral solar absorption fluids and design materials for applications which require variable spectral absorption or scattering.
ContributorsLv, Wei (Author) / Phelan, Patrick E (Thesis advisor) / Dai, Lenore (Committee member) / Prasher, Ravi (Committee member) / Arizona State University (Publisher)
Created2012
Description
This work investigates the effects of ionizing radiation and displacement damage on the retention of state, DC programming, and neuromorphic pulsed programming of Ag-Ge30Se70 conductive bridging random access memory (CBRAM) devices. The results show that CBRAM devices are susceptible to both environments. An observable degradation in electrical response due to total ionizing dose (TID) is shown during neuromorphic pulsed programming at TID below 1 Mrad using Cobalt-60. DC cycling in a 14 MeV neutron environment showed a collapse of the high resistance state (HRS) and low resistance state (LRS) programming window after a fluence of 4.9x10^{12} n/cm^2, demonstrating the CBRAM can fail in a displacement damage environment. Heavy ion exposure during retention testing and DC cycling, showed that failures to programming occurred at approximately the same threshold, indicating that the failure mechanism for the two types of tests may be the same. The dose received due to ionizing electronic interactions and non-ionizing kinetic interactions, was calculated for each ion species at the fluence of failure. TID values appear to be the most correlated, indicating that TID effects may be the dominate failure mechanism in a combined environment, though it is currently unclear as to how the displacement damage also contributes to the response. An analysis of material effects due to TID has indicated that radiation damage can limit the migration of Ag+ ions. The reduction in ion current density can explain several of the effects observed in CBRAM while in the LRS.
ContributorsTaggart, Jennifer L (Author) / Barnaby, Hugh J (Thesis advisor) / Kozicki, Michael N (Committee member) / Holbert, Keith E. (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2018
Description
The challenge of radiation therapy is to maximize the dose to the tumor while simultaneously minimizing the dose elsewhere. Proton therapy is well suited to this challenge due to the way protons slow down in matter. As the proton slows down, the rate of energy loss per unit path length continuously increases leading to a sharp dose near the end of range. Unlike conventional radiation therapy, protons stop inside the patient, sparing tissue beyond the tumor. Proton therapy should be superior to existing modalities, however, because protons stop inside the patient, there is uncertainty in the range. “Range uncertainty” causes doctors to take a conservative approach in treatment planning, counteracting the advantages offered by proton therapy. Range uncertainty prevents proton therapy from reaching its full potential.
A new method of delivering protons, pencil-beam scanning (PBS), has become the new standard for treatment over the past few years. PBS utilizes magnets to raster scan a thin proton beam across the tumor at discrete locations and using many discrete pulses of typically 10 ms duration each. The depth is controlled by changing the beam energy. The discretization in time of the proton delivery allows for new methods of dose verification, however few devices have been developed which can meet the bandwidth demands of PBS.
In this work, two devices have been developed to perform dose verification and monitoring with an emphasis placed on fast response times. Measurements were performed at the Mayo Clinic. One detector addresses range uncertainty by measuring prompt gamma-rays emitted during treatment. The range detector presented in this work is able to measure the proton range in-vivo to within 1.1 mm at depths up to 11 cm in less than 500 ms and up to 7.5 cm in less than 200 ms. A beam fluence detector presented in this work is able to measure the position and shape of each beam spot. It is hoped that this work may lead to a further maturation of detection techniques in proton therapy, helping the treatment to reach its full potential to improve the outcomes in patients.
A new method of delivering protons, pencil-beam scanning (PBS), has become the new standard for treatment over the past few years. PBS utilizes magnets to raster scan a thin proton beam across the tumor at discrete locations and using many discrete pulses of typically 10 ms duration each. The depth is controlled by changing the beam energy. The discretization in time of the proton delivery allows for new methods of dose verification, however few devices have been developed which can meet the bandwidth demands of PBS.
In this work, two devices have been developed to perform dose verification and monitoring with an emphasis placed on fast response times. Measurements were performed at the Mayo Clinic. One detector addresses range uncertainty by measuring prompt gamma-rays emitted during treatment. The range detector presented in this work is able to measure the proton range in-vivo to within 1.1 mm at depths up to 11 cm in less than 500 ms and up to 7.5 cm in less than 200 ms. A beam fluence detector presented in this work is able to measure the position and shape of each beam spot. It is hoped that this work may lead to a further maturation of detection techniques in proton therapy, helping the treatment to reach its full potential to improve the outcomes in patients.
ContributorsHolmes, Jason M (Author) / Alarcon, Ricardo (Thesis advisor) / Bues, Martin (Committee member) / Galyaev, Eugene (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2019
Description
In competitive Taekwondo, Electronic Body Protectors (EBPs) are used to register hits made by players during sparring. EBPs are comprised of three main components: chest guard, foot sock, and headgear. This equipment interacts with each other through the use of magnets, electric sensors, transmitters, and a receiver. The receiver is connected to a computer programmed with software to process signals from the transmitter and determine whether or not a competitor scored a point. The current design of EBPs, however, have numerous shortcomings, including sensing false positives, failing to register hits, costing too much, and relying on human judgment. This thesis will thoroughly delineate the operation of the current EBPs used and discuss research performed in order to eliminate these weaknesses.
ContributorsSpell, Valerie Anne (Author) / Kozicki, Michael (Thesis director) / Kitchen, Jennifer (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
Description
Flash memories are critical for embedded devices to operate properly but are susceptible to radiation effects, which make flash memory a key factor to improve the reliability of circuitry. This thesis describes the simulation techniques used to analyze and predict total ionizing dose (TID) effects on 90-nm technology Silicon Storage Technology (SST) SuperFlash Generation 3 devices. Silvaco Atlas is used for both device level design and simulation purposes.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
ContributorsChen, Yitao (Author) / Holbert, Keith E. (Thesis advisor) / Clark, Lawrence T. (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2016