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This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some

This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.
ContributorsHuang, Jingyi (Author) / Ponce, Fernando A. (Thesis advisor) / Carpenter, Ray W (Committee member) / Smith, David J. (Committee member) / Yu, Hongbin (Committee member) / Treacy, Michael Mj (Committee member) / Arizona State University (Publisher)
Created2013
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Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental

CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Programmable Metallization Cell (PMC) is a technology platform which utilizes mass transport in solid or liquid electrolyte coupled with electrochemical (redox) reactions to form or remove nanoscale metallic electrodeposits on or in the electrolyte. The ability to redistribute metal mass and form metallic nanostructure in or on a structure in

Programmable Metallization Cell (PMC) is a technology platform which utilizes mass transport in solid or liquid electrolyte coupled with electrochemical (redox) reactions to form or remove nanoscale metallic electrodeposits on or in the electrolyte. The ability to redistribute metal mass and form metallic nanostructure in or on a structure in situ, via the application of a bias on laterally placed electrodes, creates a large number of promising applications. A novel PMC-based lateral microwave switch was fabricated and characterized for use in microwave systems. It has demonstrated low insertion loss, high isolation, low voltage operation, low power and low energy consumption, and excellent linearity. Due to its non-volatile nature the switch operates with fewer biases and its simple planar geometry makes possible innovative device structures which can be potentially integrated into microwave power distribution circuits. PMC technology is also used to develop lateral dendritic metal electrodes. A lateral metallic dendritic network can be grown in a solid electrolyte (GeSe) or electrodeposited on SiO2 or Si using a water-mediated method. These dendritic electrodes grown in a solid electrolyte (GeSe) can be used to lower resistances for applications like self-healing interconnects despite its relatively low light transparency; while the dendritic electrodes grown using water-mediated method can be potentially integrated into solar cell applications, like replacing conventional Ag screen-printed top electrodes as they not only reduce resistances but also are highly transparent. This research effort also laid a solid foundation for developing dendritic plasmonic structures. A PMC-based lateral dendritic plasmonic structure is a device that has metallic dendritic networks grown electrochemically on SiO2 with a thin layer of surface metal nanoparticles in liquid electrolyte. These structures increase the distribution of particle sizes by connecting pre-deposited Ag nanoparticles into fractal structures and result in three significant effects, resonance red-shift, resonance broadening and resonance enhancement, on surface plasmon resonance for light trapping simultaneously, which can potentially enhance thin film solar cells' performance at longer wavelengths.
ContributorsRen, Minghan (Author) / Kozicki, Michael (Thesis advisor) / Schroder, Dieter (Committee member) / Roedel, Ronald (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2011
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Description
In today's world there is a great need for sensing methods as tools to provide critical information to solve today's problems in security applications. Real time detection of trace chemicals, such as explosives, in a complex environment containing various interferents using a portable device that can be reliably deployed in

In today's world there is a great need for sensing methods as tools to provide critical information to solve today's problems in security applications. Real time detection of trace chemicals, such as explosives, in a complex environment containing various interferents using a portable device that can be reliably deployed in a field has been a difficult challenge. A hybrid nanosensor based on the electrochemical reduction of trinitrotoluene (TNT) and the interaction of the reduction products with conducting polymer nanojunctions in an ionic liquid was fabricated. The sensor simultaneously measures the electrochemical current from the reduction of TNT and the conductance change of the polymer nanojunction caused from the reduction product. The hybrid detection mechanism, together with the unique selective preconcentration capability of the ionic liquid, provides a selective, fast, and sensitive detection of TNT. The sensor, in its current form, is capable of detecting parts per trillion level TNT in the presence of various interferents within a few minutes. A novel hybrid electrochemical-colorimetric (EC-C) sensing platform was also designed and fabricated to meet these challenges. The hybrid sensor is based on electrochemical reactions of trace explosives, colorimetric detection of the reaction products, and unique properties of the explosives in an ionic liquid (IL). This approach affords not only increased sensitivity but also selectivity as evident from the demonstrated null rate of false positives and low detection limits. Using an inexpensive webcam a detection limit of part per billion in volume (ppbV) has been achieved and demonstrated selective detection of explosives in the presence of common interferences (perfumes, mouth wash, cleaners, petroleum products, etc.). The works presented in this dissertation, were published in the Journal of the American Chemical Society (JACS, 2009) and Nano Letters (2010), won first place in the National Defense Research contest in (2009) and has been granted a patent (WO 2010/030874 A1). In addition, other work related to conductive polymer junctions and their sensing capabilities has been published in Applied Physics Letters (2005) and IEEE sensors journal (2008).
ContributorsDiaz Aguilar, Alvaro (Author) / Tao, Nongjian (Thesis advisor) / Tsui, Raymond (Committee member) / Barnaby, Hugh (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
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Description
This thesis summarizes the research work carried out on design, modeling and simulation of semiconductor nanophotonic devices. The research includes design of nanowire (NW) lasers, modeling of active plasmonic waveguides, design of plasmonic nano-lasers, and design of all-semiconductor plasmonic systems. For the NW part, a comparative study of electrical injection

This thesis summarizes the research work carried out on design, modeling and simulation of semiconductor nanophotonic devices. The research includes design of nanowire (NW) lasers, modeling of active plasmonic waveguides, design of plasmonic nano-lasers, and design of all-semiconductor plasmonic systems. For the NW part, a comparative study of electrical injection in the longitudinal p-i-n and coaxial p-n core-shell NWs was performed. It is found that high density carriers can be efficiently injected into and confined in the core-shell structure. The required bias voltage and doping concentrations in the core-shell structure are smaller than those in the longitudinal p-i-n structure. A new device structure with core-shell configuration at the p and n contact regions for electrically driven single NW laser was proposed. Through a comprehensive design trade-off between threshold gain and threshold voltage, room temperature lasing has been proved in the laser with low threshold current and large output efficiency. For the plasmonic part, the propagation of surface plasmon polariton (SPP) in a metal-semiconductor-metal structure where semiconductor is highly excited to have an optical gain was investigated. It is shown that near the resonance the SPP mode experiences an unexpected giant modal gain that is 1000 times of the material gain in the semiconductor and the corresponding confinement factor is as high as 105. The physical origin of the giant modal gain is the slowing down of the average energy propagation in the structure. Secondly, SPP modes lasing in a metal-insulator-semiconductor multi-layer structure was investigated. It is shown that the lasing threshold can be reduced by structural optimization. A specific design example was optimized using AlGaAs/GaAs/AlGaAs single quantum well sandwiched between silver layers. This cavity has a physical volume of 1.5×10-4 λ03 which is the smallest nanolaser reported so far. Finally, the all-semiconductor based plasmonics was studied. It is found that InAs is superior to other common semiconductors for plasmonic application in mid-infrared range. A plasmonic system made of InAs, GaSb and AlSb layers, consisting of a plasmonic source, waveguide and detector was proposed. This on-chip integrated system is realizable in a single epitaxial growth process.
ContributorsLi, Debin (Author) / Ning, Cun-Zheng (Thesis advisor) / Zhang, Yong-Hang (Committee member) / Balanis, Constantine A (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
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Description
This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on

This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on GaSb or InAs substrates for current-matched subcells with minimal defect densities. CdSe/CdTe superlattices are proposed as a potential candidate for a subcell in the MJ solar cell designs using this material system, and therefore the material properties of the superlattices are studied. The high structural qualities of the superlattices are obtained from high resolution X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The effective bandgap energies of the superlattices obtained from the photoluminescence (PL) measurements vary with the layer thicknesses, and are smaller than the bandgap energies of either the constituent material. Furthermore, The PL peak position measured at the steady state exhibits a blue shift that increases with the excess carrier concentration. These results confirm a strong type-II band edge alignment between CdSe and CdTe. The valence band offset between unstrained CdSe and CdTe is determined as 0.63 eV±0.06 eV by fitting the measured PL peak positions using the Kronig-Penney model. The blue shift in PL peak position is found to be primarily caused by the band bending effect based on self-consistent solutions of the Schrödinger and Poisson equations. Secondly, the design of the contact grid layout is studied to maximize the power output and energy conversion efficiency for concentrator solar cells. Because the conventional minimum power loss method used for the contact design is not accurate in determining the series resistance loss, a method of using a distributed series resistance model to maximize the power output is proposed for the contact design. It is found that the junction recombination loss in addition to the series resistance loss and shadowing loss can significantly affect the contact layout. The optimal finger spacing and maximum efficiency calculated by the two methods are close, and the differences are dependent on the series resistance and saturation currents of solar cells. Lastly, the accurate measurements of external quantum efficiency (EQE) are important for the design and development of MJ solar cells. However, the electrical and optical couplings between the subcells have caused EQE measurement artifacts. In order to interpret the measurement artifacts, DC and small signal models are built for the bias condition and the scan of chopped monochromatic light in the EQE measurements. Characterization methods are developed for the device parameters used in the models. The EQE measurement artifacts are found to be caused by the shunt and luminescence coupling effects, and can be minimized using proper voltage and light biases. Novel measurement methods using a pulse voltage bias or a pulse light bias are invented to eliminate the EQE measurement artifacts. These measurement methods are nondestructive and easy to implement. The pulse voltage bias or pulse light bias is superimposed on the conventional DC voltage and light biases, in order to control the operating points of the subcells and counterbalance the effects of shunt and luminescence coupling. The methods are demonstrated for the first time to effectively eliminate the measurement artifacts.
ContributorsLi, Jingjing (Author) / Zhang, Yong-Hang (Thesis advisor) / Tao, Meng (Committee member) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
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Description
The objective of this dissertation is to study the use of metamaterials as narrow-band and broadband selective absorbers for opto-thermal and solar thermal energy conversion. Narrow-band selective absorbers have applications such as plasmonic sensing and cancer treatment, while one of the main applications of selective metamaterials with broadband absorption is

The objective of this dissertation is to study the use of metamaterials as narrow-band and broadband selective absorbers for opto-thermal and solar thermal energy conversion. Narrow-band selective absorbers have applications such as plasmonic sensing and cancer treatment, while one of the main applications of selective metamaterials with broadband absorption is efficiently converting solar energy into heat as solar absorbers.

This dissertation first discusses the use of gold nanowires as narrow-band selective metamaterial absorbers. An investigation into plasmonic localized heating indicated that film-coupled gold nanoparticles exhibit tunable selective absorption based on the size of the nanoparticles. By using anodized aluminum oxide templates, aluminum nanodisc narrow-band absorbers were fabricated. A metrology instrument to measure the reflectance and transmittance of micro-scale samples was also developed and used to measure the reflectance of the aluminum nanodisc absorbers (220 µm diameter area). Tuning of the resonance wavelengths of these absorbers can be achieved through changing their geometry. Broadband absorption can be achieved by using a combination of geometries for these metamaterials which would facilitate their use as solar absorbers.

Recently, solar energy harvesting has become a topic of considerable research investigation due to it being an environmentally conscious alternative to fossil fuels. The next section discusses the steady-state temperature measurement of a lab-scale multilayer solar absorber, named metafilm. A lab-scale experimental setup is developed to characterize the solar thermal performance of selective solar absorbers. Under a concentration factor of 20.3 suns, a steady-state temperature of ~500 degrees Celsius was achieved for the metafilm compared to 375 degrees Celsius for a commercial black absorber under the same conditions. Thermal durability testing showed that the metafilm could withstand up to 700 degrees Celsius in vacuum conditions and up to 400 degrees Celsius in atmospheric conditions with little degradation of its optical and radiative properties. Moreover, cost analysis of the metafilm found it to cost significantly less ($2.22 per square meter) than commercial solar coatings ($5.41-100 per square meter).

Finally, this dissertation concludes with recommendations for further studies like using these selective metamaterials and metafilms as absorbers and emitters and using the aluminum nanodiscs on glass as selective filters for photovoltaic cells to enhance solar thermophotovoltaic energy conversion.
ContributorsAlshehri, Hassan (Author) / Wang, Liping (Thesis advisor) / Phelan, Patrick (Committee member) / Rykaczewski, Konrad (Committee member) / Wang, Robert (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting

Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting diodes (LEDs) have increasingly displaced incandescent and fluorescent bulbs as the new major light sources for lighting and display. In addition, due to their large bandgap and high critical electrical field, WBG semiconductors are also ideal candidates for efficient power conversion.

In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.

In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
ContributorsFu, Houqiang (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2019
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Description
Semiconductor nanolasers, as a frontier subject has drawn a great deal of attention over the past decade. Semiconductor nanolasers are compatible with on-chip integrations towards the ultimate realization of photonic integrated circuits. However, innovative approaches are strongly required to overcome the limitation of lattice-mismatch issues. In this dissertation, two alternative

Semiconductor nanolasers, as a frontier subject has drawn a great deal of attention over the past decade. Semiconductor nanolasers are compatible with on-chip integrations towards the ultimate realization of photonic integrated circuits. However, innovative approaches are strongly required to overcome the limitation of lattice-mismatch issues. In this dissertation, two alternative approaches are employed to overcome the lattice-mismatch issues. i) By taking advantage of nanowires or nanobelts techniques, flexibility in bandgap engineering has been greatly expanded, resulting in the nanolasers with wide wavelength coverage and tunability. Simultaneous two-color lasing in green and red is firstly achieved from monolithic cadmium sulfide selenide nanosheets. The wavelength separation is up to 97 nm at room temperature, larger than the gain bandwidth of a single semiconductor material in the visible wavelength range. The strategies adopted for two-color lasers eventually leads to the realization of simultaneous red, green and blue lasing and white lasing from a single zinc cadmium sulfide selenide nanosheet with color tunability in the full visible range, making a major milestone in the ultimate solution of laser illumination and laser display. In addition, with the help of nanowire techniques, material emission has been extended to mid-infrared range, enabling lasing at ~3µm from single lead sulfide subwavelength wires at 180 K. The cavity volume of the subwavelength laser is down to 0.44 λ3 and the wavelength tuning range is over 270 nm through the thermo-optic mechanism, exhibiting considerable potentials for on-chip applications in mid-infrared wavelength ranges. ii) By taking advantage of membrane transfer techniques, heterogeneous integration of compound semiconductor and waveguide material becomes possible, enabling the successful fabrication of membrane based nano-ring lasers on a dielectric substrate. Thin membranes with total thickness of ~200nm are first released from the original growth substrate and then transferred onto a receiving substrate through a generally applicable membrane transfer method. Nano-ring arrays are then defined by photolithography with an individual radius of 750 nm and a radial thickness of 400-500 nm. As a result, single mode lasing is achieved on individual nano-ring lasers at ~980 nm with cavity volumes down to 0.24 λ3, providing a general avenue for future heterogeneous integration of nanolasers on silicon substrates.
ContributorsFan, Fan (Author) / Ning, Cun-Zheng (Thesis advisor) / Balanis, Constantine A (Committee member) / Palais, Joseph C. (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2016
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Description
To extend the lifetime of complementary metal-oxide-semiconductors (CMOS), emerging process techniques are being proposed to conquer the manufacturing difficulties. New structures and materials are proposed with superior electrical properties to traditional CMOS, such as strain technology and feedback field-effect transistor (FB-FET). To continue the design success and make an impact

To extend the lifetime of complementary metal-oxide-semiconductors (CMOS), emerging process techniques are being proposed to conquer the manufacturing difficulties. New structures and materials are proposed with superior electrical properties to traditional CMOS, such as strain technology and feedback field-effect transistor (FB-FET). To continue the design success and make an impact on leading products, advanced circuit design exploration must begin concurrently with early silicon development. Therefore, an accurate and scalable model is desired to correctly capture those effects and flexible to extend to alternative process choices. For example, strain technology has been successfully integrated into CMOS fabrication to improve transistor performance but the stress is non-uniformly distributed in the channel, leading to systematic performance variations. In this dissertation, a new layout-dependent stress model is proposed as a function of layout, temperature, and other device parameters. Furthermore, a method of layout decomposition is developed to partition the layout into a set of simple patterns for model extraction. These solutions significantly reduce the complexity in stress modeling and simulation. On the other hand, semiconductor devices with self-feedback mechanisms are emerging as promising alternatives to CMOS. Fe-FET was proposed to improve the switching by integrating a ferroelectric material as gate insulator in a MOSFET structure. Under particular circumstances, ferroelectric capacitance is effectively negative, due to the negative slope of its polarization-electrical field curve. This property makes the ferroelectric layer a voltage amplifier to boost surface potential, achieving fast transition. A new threshold voltage model for Fe-FET is developed, and is further revealed that the impact of random dopant fluctuation (RDF) can be suppressed. Furthermore, through silicon via (TSV), a key technology that enables the 3D integration of chips, is studied. TSV structure is usually a cylindrical metal-oxide-semiconductors (MOS) capacitor. A piecewise capacitance model is proposed for 3D interconnect simulation. Due to the mismatch in coefficients of thermal expansion (CTE) among materials, thermal stress is observed in TSV process and impacts neighboring devices. The stress impact is investigated to support the interaction between silicon process and IC design at the early stage.
ContributorsWang, Chi-Chao (Author) / Cao, Yu (Thesis advisor) / Chakrabarti, Chaitali (Committee member) / Clark, Lawrence (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2011