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Description
This dissertation proposes and presents two different passive sigma-delta
modulator zoom Analog to Digital Converter (ADC) architectures. The first ADC is fullydifferential, synthesizable zoom-ADC architecture with a passive loop filter for lowfrequency Built in Self-Test (BIST) applications. The detailed ADC architecture and a step
by step process designing the zoom-ADC along with a synthesis tool that can target various
design specifications are presented. The design flow does not rely on extensive knowledge
of an experienced ADC designer. Two example set of BIST ADCs have been synthesized
with different performance requirements in 65nm CMOS process. The first ADC achieves
90.4dB Signal to Noise Ratio (SNR) in 512µs measurement time and consumes 17µW
power. Another example achieves 78.2dB SNR in 31.25µs measurement time and
consumes 63µW power. The second ADC architecture is a multi-mode, dynamically
zooming passive sigma-delta modulator. The architecture is based on a 5b interpolating
flash ADC as the zooming unit, and a passive discrete time sigma delta modulator as the
fine conversion unit. The proposed ADC provides an Oversampling Ratio (OSR)-
independent, dynamic zooming technique, employing an interpolating zooming front-end.
The modulator covers between 0.1 MHz and 10 MHz signal bandwidth which makes it
suitable for cellular applications including 4G radio systems. By reconfiguring the OSR,
bias current, and component parameters, optimal power consumption can be achieved for
every mode. The ADC is implemented in 0.13 µm CMOS technology and it achieves an
SNDR of 82.2/77.1/74.2/68 dB for 0.1/1.92/5/10MHz bandwidth with 1.3/5.7/9.6/11.9mW
power consumption from a 1.2 V supply.
modulator zoom Analog to Digital Converter (ADC) architectures. The first ADC is fullydifferential, synthesizable zoom-ADC architecture with a passive loop filter for lowfrequency Built in Self-Test (BIST) applications. The detailed ADC architecture and a step
by step process designing the zoom-ADC along with a synthesis tool that can target various
design specifications are presented. The design flow does not rely on extensive knowledge
of an experienced ADC designer. Two example set of BIST ADCs have been synthesized
with different performance requirements in 65nm CMOS process. The first ADC achieves
90.4dB Signal to Noise Ratio (SNR) in 512µs measurement time and consumes 17µW
power. Another example achieves 78.2dB SNR in 31.25µs measurement time and
consumes 63µW power. The second ADC architecture is a multi-mode, dynamically
zooming passive sigma-delta modulator. The architecture is based on a 5b interpolating
flash ADC as the zooming unit, and a passive discrete time sigma delta modulator as the
fine conversion unit. The proposed ADC provides an Oversampling Ratio (OSR)-
independent, dynamic zooming technique, employing an interpolating zooming front-end.
The modulator covers between 0.1 MHz and 10 MHz signal bandwidth which makes it
suitable for cellular applications including 4G radio systems. By reconfiguring the OSR,
bias current, and component parameters, optimal power consumption can be achieved for
every mode. The ADC is implemented in 0.13 µm CMOS technology and it achieves an
SNDR of 82.2/77.1/74.2/68 dB for 0.1/1.92/5/10MHz bandwidth with 1.3/5.7/9.6/11.9mW
power consumption from a 1.2 V supply.
ContributorsEROL, OSMAN EMIR (Author) / Ozev, Sule (Thesis advisor) / Kitchen, Jennifer (Committee member) / Ogras, Umit Y. (Committee member) / Blain-Christen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019
Description
Readout Integrated Circuits(ROICs) are important components of infrared(IR) imag
ing systems. Performance of ROICs affect the quality of images obtained from IR
imaging systems. Contemporary infrared imaging applications demand ROICs that
can support large dynamic range, high frame rate, high output data rate, at low
cost, size and power. Some of these applications are military surveillance, remote
sensing in space and earth science missions and medical diagnosis. This work focuses
on developing a ROIC unit cell prototype for National Aeronautics and Space Ad
ministration(NASA), Jet Propulsion Laboratory’s(JPL’s) space applications. These
space applications also demand high sensitivity, longer integration times(large well
capacity), wide operating temperature range, wide input current range and immunity
to radiation events such as Single Event Latchup(SEL).
This work proposes a digital ROIC(DROIC) unit cell prototype of 30ux30u size,
to be used mainly with NASA JPL’s High Operating Temperature Barrier Infrared
Detectors(HOT BIRDs). Current state of the art DROICs achieve a dynamic range
of 16 bits using advanced 65-90nm CMOS processes which adds a lot of cost overhead.
The DROIC pixel proposed in this work uses a low cost 180nm CMOS process and
supports a dynamic range of 20 bits operating at a low frame rate of 100 frames per
second(fps), and a dynamic range of 12 bits operating at a high frame rate of 5kfps.
The total electron well capacity of this DROIC pixel is 1.27 billion electrons, enabling
integration times as long as 10ms, to achieve better dynamic range. The DROIC unit
cell uses an in-pixel 12-bit coarse ADC and an external 8-bit DAC based fine ADC.
The proposed DROIC uses layout techniques that make it immune to radiation up to
300krad(Si) of total ionizing dose(TID) and single event latch-up(SEL). It also has a
wide input current range from 10pA to 1uA and supports detectors operating from
Short-wave infrared (SWIR) to longwave infrared (LWIR) regions.
ing systems. Performance of ROICs affect the quality of images obtained from IR
imaging systems. Contemporary infrared imaging applications demand ROICs that
can support large dynamic range, high frame rate, high output data rate, at low
cost, size and power. Some of these applications are military surveillance, remote
sensing in space and earth science missions and medical diagnosis. This work focuses
on developing a ROIC unit cell prototype for National Aeronautics and Space Ad
ministration(NASA), Jet Propulsion Laboratory’s(JPL’s) space applications. These
space applications also demand high sensitivity, longer integration times(large well
capacity), wide operating temperature range, wide input current range and immunity
to radiation events such as Single Event Latchup(SEL).
This work proposes a digital ROIC(DROIC) unit cell prototype of 30ux30u size,
to be used mainly with NASA JPL’s High Operating Temperature Barrier Infrared
Detectors(HOT BIRDs). Current state of the art DROICs achieve a dynamic range
of 16 bits using advanced 65-90nm CMOS processes which adds a lot of cost overhead.
The DROIC pixel proposed in this work uses a low cost 180nm CMOS process and
supports a dynamic range of 20 bits operating at a low frame rate of 100 frames per
second(fps), and a dynamic range of 12 bits operating at a high frame rate of 5kfps.
The total electron well capacity of this DROIC pixel is 1.27 billion electrons, enabling
integration times as long as 10ms, to achieve better dynamic range. The DROIC unit
cell uses an in-pixel 12-bit coarse ADC and an external 8-bit DAC based fine ADC.
The proposed DROIC uses layout techniques that make it immune to radiation up to
300krad(Si) of total ionizing dose(TID) and single event latch-up(SEL). It also has a
wide input current range from 10pA to 1uA and supports detectors operating from
Short-wave infrared (SWIR) to longwave infrared (LWIR) regions.
ContributorsPraveen, Subramanya Chilukuri (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kitchen, Jennifer (Committee member) / Long, Yu (Committee member) / Arizona State University (Publisher)
Created2019