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- Creators: Yu, Hongbin
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This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In2Se3/Bi2Se3 heterostructures and graphene. The first part of the thesis was focused on the growth and characterization of lateral SiNW. Lateral here refers to wires growing along the plane of substrate; vertical NW on the other hand grow out of the plane of substrate. It was found, using the Au-seeded vapor – liquid – solid technique, that epitaxial single-crystal SiNW can be grown laterally along Si(111) substrates that have been miscut toward [11− 2]. The ratio of lateral-to-vertical NW was found to increase as the miscut angle increased and as disilane pressure and substrate temperature decreased. Based on this observation, growth parameters were identified whereby all of the deposited Au seeds formed lateral NW. Furthermore, the nanofaceted substrate guided the growth via a mechanism that involved pinning of the trijunction at the liquid/solid interface of the growing nanowire.
Next, the growth of selenide heterostructures was explored. Specifically, molecular beam epitaxy was utilized to grow In2Se3 and Bi2Se3 films on h-BN, highly oriented pyrolytic graphite and Si(111) substrates. Growth optimizations of In2Se3 and Bi2Se3 films were carried out by systematically varying the growth parameters. While the growth of these films was demonstrated on h-BN and HOPG surface, the majority of the effort was focused on growth on Si(111). Atomically flat terraces that extended laterally for several hundred nm, which were separated by single quintuple layer high steps characterized surface of the best In2Se3 films grown on Si(111). These In2Se3 films were suitable for subsequent high quality epitaxy of Bi2Se3 .
The last part of this dissertation was focused on a recently initiated and ongoing study of graphene growth on liquid metal surfaces. The initial part of the study comprised a successful modification of an existing growth system to accommodate graphene synthesis and process development for reproducible graphene growth. Graphene was grown on Cu, Au and AuCu alloys at varioua conditions. Preliminary results showed triangular features on the liquid part of the Cu metal surface. For Au, and AuCu alloys, hexagonal features were noticed both on the solid and liquid parts.
Next, the growth of selenide heterostructures was explored. Specifically, molecular beam epitaxy was utilized to grow In2Se3 and Bi2Se3 films on h-BN, highly oriented pyrolytic graphite and Si(111) substrates. Growth optimizations of In2Se3 and Bi2Se3 films were carried out by systematically varying the growth parameters. While the growth of these films was demonstrated on h-BN and HOPG surface, the majority of the effort was focused on growth on Si(111). Atomically flat terraces that extended laterally for several hundred nm, which were separated by single quintuple layer high steps characterized surface of the best In2Se3 films grown on Si(111). These In2Se3 films were suitable for subsequent high quality epitaxy of Bi2Se3 .
The last part of this dissertation was focused on a recently initiated and ongoing study of graphene growth on liquid metal surfaces. The initial part of the study comprised a successful modification of an existing growth system to accommodate graphene synthesis and process development for reproducible graphene growth. Graphene was grown on Cu, Au and AuCu alloys at varioua conditions. Preliminary results showed triangular features on the liquid part of the Cu metal surface. For Au, and AuCu alloys, hexagonal features were noticed both on the solid and liquid parts.
ContributorsRathi, Somilkumar J (Author) / Drucker, Jeffery (Thesis advisor) / Smith, David (Committee member) / Chen, Tingyong (Committee member) / Arizona State University (Publisher)
Created2014
Description
Graphene, a one atomic thick planar sheet of carbon atoms, has a zero gap band structure with a linear dispersion relation. This unique property makes graphene a favorite for physicists and engineers, who are trying to understand the mechanism of charge transport in graphene and using it as channel material for field effect transistor (FET) beyond silicon. Therefore, an in-depth exploring of these electrical properties of graphene is urgent, which is the purpose of this dissertation. In this dissertation, the charge transport and quantum capacitance of graphene were studied. Firstly, the transport properties of back-gated graphene transistor covering by high dielectric medium were systematically studied. The gate efficiency increased by up to two orders of magnitude in the presence of a high top dielectric medium, but the mobility did not change significantly. The results strongly suggested that the previously reported top dielectric medium-induced charge transport properties of graphene FETs were possibly due to the increase of gate capacitance, rather than enhancement of carrier mobility. Secondly, a direct measurement of quantum capacitance of graphene was performed. The quantum capacitance displayed a non-zero minimum at the Dirac point and a linear increase on both sides of the minimum with relatively small slopes. The findings - which were not predicted by theory for ideal graphene - suggested that scattering from charged impurities also influences the quantum capacitance. The capacitances in aqueous solutions at different ionic concentrations were also measured, which strongly suggested that the longstanding puzzle about the interfacial capacitance in carbon-based electrodes had a quantum origin. Finally, the transport and quantum capacitance of epitaxial graphene were studied simultaneously, the quantum capacitance of epitaxial graphene was extracted, which was similar to that of exfoliated graphene near the Dirac Point, but exhibited a large sub-linear behavior at high carrier density. The self-consistent theory was found to provide a reasonable description of the transport data of the epitaxial graphene device, but a more complete theory was needed to explain both the transport and quantum capacitance data.
ContributorsXia, Jilin (Author) / Tao, N.J. (Thesis advisor) / Ferry, David (Committee member) / Thornton, Trevor (Committee member) / Tsui, Raymond (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2010
Description
Graphene has been extensively researched for both scientific and technological interests since its first isolation from graphite. The excellent transport properties and long spin diffusion length of graphene make it a promising material for electronic and spintronic device applications. This dissertation deals with the optimization of magnetic field sensing in graphene and the realization of nanoparticle induced ferromagnetism in graphene towards spintronic device applications.
Graphene has been used as a channel material for magnetic sensors demonstrating the potential for very high sensitivities, especially for Hall sensors, due to its extremely high mobility and low carrier concentration. However, the two-carrier nature of graphene near the charge neutrality point (CNP) causes a nonlinearity issue for graphene Hall sensors, which limits useful operating ranges and has not been fully studied. In this dissertation, a two-channel model was used to describe the transport of graphene near the CNP. The model was carefully validated by experiments and then was used to explore the optimization of graphene sensor performance by tuning the gate operating bias under realistic constraints on linearity and power dissipation.
The manipulation of spin in graphene that is desired for spintronic applications is limited by its weak spin-orbit coupling (SOC). Proximity induced ferromagnetism (PIFM) from an adjacent ferromagnetic insulator (FMI) provides a method for enhancing SOC in graphene without degrading its transport properties. However, suitable FMIs are uncommon and difficult to integrate with graphene. In this dissertation, PIFM in graphene from an adjacent Fe3O4 magnetic nanoparticle (MNP) array was demonstrated for the first time. Observation of the anomalous Hall effect (AHE) in the device structures provided the signature of PIFM. Comparison of the test samples with different control samples conclusively proved that exchange interaction at the MNP/graphene interface was responsible for the observed characteristics. The PIFM in graphene was shown to persist at room temperature and to be gate-tunable, which are desirable features for electrically controlled spintronic device applications.
The observation of PIFM in the MNP/graphene devices indicates that the spin transfer torque (STT) from spin-polarized current in the graphene can interact with the magnetization of the MNPs. If there is sufficient STT, spin torque oscillation (STO) could be realized in this structure. In this dissertation, three methods were employed to search for signatures of STO in the devices. STO was not observed in our devices, most likely due to the weak spin-polarization for current injected from conventional ferromagnetic contacts to graphene. Calculation indicates that graphene should provide sufficient spin-polarized current for exciting STO in optimized structures that miniaturize the device area and utilize optimized tunnel-barrier contacts for improved spin injection.
Graphene has been used as a channel material for magnetic sensors demonstrating the potential for very high sensitivities, especially for Hall sensors, due to its extremely high mobility and low carrier concentration. However, the two-carrier nature of graphene near the charge neutrality point (CNP) causes a nonlinearity issue for graphene Hall sensors, which limits useful operating ranges and has not been fully studied. In this dissertation, a two-channel model was used to describe the transport of graphene near the CNP. The model was carefully validated by experiments and then was used to explore the optimization of graphene sensor performance by tuning the gate operating bias under realistic constraints on linearity and power dissipation.
The manipulation of spin in graphene that is desired for spintronic applications is limited by its weak spin-orbit coupling (SOC). Proximity induced ferromagnetism (PIFM) from an adjacent ferromagnetic insulator (FMI) provides a method for enhancing SOC in graphene without degrading its transport properties. However, suitable FMIs are uncommon and difficult to integrate with graphene. In this dissertation, PIFM in graphene from an adjacent Fe3O4 magnetic nanoparticle (MNP) array was demonstrated for the first time. Observation of the anomalous Hall effect (AHE) in the device structures provided the signature of PIFM. Comparison of the test samples with different control samples conclusively proved that exchange interaction at the MNP/graphene interface was responsible for the observed characteristics. The PIFM in graphene was shown to persist at room temperature and to be gate-tunable, which are desirable features for electrically controlled spintronic device applications.
The observation of PIFM in the MNP/graphene devices indicates that the spin transfer torque (STT) from spin-polarized current in the graphene can interact with the magnetization of the MNPs. If there is sufficient STT, spin torque oscillation (STO) could be realized in this structure. In this dissertation, three methods were employed to search for signatures of STO in the devices. STO was not observed in our devices, most likely due to the weak spin-polarization for current injected from conventional ferromagnetic contacts to graphene. Calculation indicates that graphene should provide sufficient spin-polarized current for exciting STO in optimized structures that miniaturize the device area and utilize optimized tunnel-barrier contacts for improved spin injection.
ContributorsSong, Guibin (Author) / Kiehl, Richard A. (Committee member) / Yu, Hongbin (Committee member) / Chen, Tingyong (Committee member) / Rizzo, Nicholas D (Committee member) / Arizona State University (Publisher)
Created2019