Matching Items (6)
Filtering by

Clear all filters

151596-Thumbnail Image.png
Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3

Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
151512-Thumbnail Image.png
Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7

Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.  
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
156467-Thumbnail Image.png
Description
The hierarchical silica structure of the Coscinodiscus wailesii diatom was studied due to its intriguing optical properties. To bring the diatom into light harvesting applications, three crucial factors were investigated, including closely-packed diatom monolayer formation, bonding of the diatoms on a substrate, and conversion of silica diatom shells into silicon.

The hierarchical silica structure of the Coscinodiscus wailesii diatom was studied due to its intriguing optical properties. To bring the diatom into light harvesting applications, three crucial factors were investigated, including closely-packed diatom monolayer formation, bonding of the diatoms on a substrate, and conversion of silica diatom shells into silicon.

The closely-packed monolayer formation of diatom valves on silicon substrates was accomplished using their hydrodynamic properties and the surface tension of water. Valves dispersed on a hydrophobic surface were able to float-up with a preferential orientation (convex side facing the water surface) when water was added. The floating diatom monolayer was subsequently transferred to a silicon substrate. A closely-packed diatom monolayer on the silicon substrate was obtained after the water evaporated at room temperature.

The diatom monolayer was then directly bonded onto the substrate via a sintering process at high temperature in air. The percentage of bonded valves increased as the temperature increased. The valves started to sinter into the substrate at 1100°C. The sintering process caused shrinkage of the nanopores at temperatures above 1100°C. The more delicate structure was more sensitive to the elevated temperature. The cribellum, the most intricate nanostructure of the diatom (~50 nm), disappeared at 1125°C. The cribrum, consisting of approximated 100-300 nm diameter pores, disappeared at 1150°C. The areola, the micro-chamber-liked structure, can survive up to 1150°C. At 1200°C, the complete nanostructure was destroyed. In addition, cross-section images revealed that the valves fused into the thermally-grown oxide layer that was generated on the substrate at high temperatures.

The silica-sintered diatom close-packed monolayer, processed at 1125°C, was magnesiothermically converted into porous silicon using magnesium silicide. X-ray diffraction, infrared absorption, energy dispersive X-say spectra and secondary electron images confirmed the formation of a Si layer with preserved diatom nano-microstructure. The conversion process and subsequent application of a PEDOT:PSS coating both decreased the light reflection from the sample. The photocurrent and reflectance spectra revealed that the Si-diatom dominantly enhanced light absorption between 414 to 586 nm and 730 to 800 nm. Though some of the structural features disappeared during the sintering process, the diatom is still able to improve light absorption. Therefore, the sintering process can be used for diatom direct bonding in light harvesting applications.
ContributorsRojsatien, Srisuda (Author) / Goryll, Michael (Thesis advisor) / Alford, Terry (Thesis advisor) / Theodore, David (Committee member) / Arizona State University (Publisher)
Created2018
156613-Thumbnail Image.png
Description
This work describes efforts made toward the development of a compact, quantitative fluorescence-based multiplexed detection platform for point-of-care diagnostics. This includes the development of a microfluidic delivery and actuation system for multistep detection assays. Early detection of infectious diseases requires high sensitivity dependent on the precise actuation of fluids.

Methods

This work describes efforts made toward the development of a compact, quantitative fluorescence-based multiplexed detection platform for point-of-care diagnostics. This includes the development of a microfluidic delivery and actuation system for multistep detection assays. Early detection of infectious diseases requires high sensitivity dependent on the precise actuation of fluids.

Methods of fluid actuation were explored to allow delayed delivery of fluidic reagents in multistep detection lateral flow assays (LFAs). Certain hydrophobic materials such as wax were successfully implemented in the LFA with the use of precision dispensed valves. Sublimating materials such as naphthalene were also characterized along with the implementation of a heating system for precision printing of the valves.

Various techniques of blood fractionation were also investigated and this work demonstrates successful blood fractionation in an LFA. The fluid flow of reagents was also characterized and validated with the use of mathematical models and multiphysics modeling software. Lastly intuitive, user-friendly mobile and desktop applications were developed to interface the underlying Arduino software. The work advances the development of a system which successfully integrates all components of fluid separation and delivery along with highly sensitive detection and a user-friendly interface; the system will ultimately provide clinically significant diagnostics in a of point-of-care device.
ContributorsArafa, Hany M (Author) / Blain Christen, Jennifer M (Thesis advisor) / Goryll, Michael (Committee member) / Smith, Barbara (Committee member) / Arizona State University (Publisher)
Created2018
156861-Thumbnail Image.png
Description
In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the

In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the concentration or eliminate the defects. Barrier height determinations using temperature-dependent I-V measurements indicate that the barrier height decreases from 0.50 eV to 0.48 eV for anneals above 200 C. The electrically-active defect concentration measured using DLTS (deep level transient spectroscopy) drops markedly after anneals at 250 C.

A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
ContributorsKrishna Murthy, Madhu (Author) / Newman, Nathan (Thesis advisor) / Goryll, Michael (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2018
154865-Thumbnail Image.png
Description
InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI

InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe.

Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges from 0.0503 to 0.0645 for the sample set, and ion channeling measurements indicate that the Bi atoms are substitutional. The X-ray diffraction measurements show a diffraction sideband near the main (004) diffraction peak, indicating that the Bi mole fraction is not laterally uniform in the layer. The average out of plane tetragonal distortion is determined by modeling the main and sideband diffraction peaks, from which the average unstrained lattice constant of each sample is determined. By comparing the Bi mole fraction measured by random Rutherford backscattering with the InAsBi lattice constant for the sample set, the lattice constant of zinc blende InBi is determined to be 6.6107 Å.

Several InAsBi quantum wells tensilely strained to the GaSb lattice constant with dilute quantities of Bi are characterized using photoluminescence spectroscopy. Investigation of the integrated intensity as a function of carrier excitation density spanning 5×1025 to 5×1026 cm-3 s-1 indicates radiative dominated recombination and high quantum efficiency over the 12 to 250 K temperature range. The bandgap of InAsBi is ascertained from the photoluminescence spectra and parameterized as a function of temperature using the Einstein single oscillator model. The dilute Bi mole fraction of the InAsBi quantum wells is determined by comparing the measured bandgap energy to that predicted by the valence band anticrossing model. The Bi mole fraction determined by photoluminescence agrees reasonably well with that estimated using secondary ion mass spectrometry.
ContributorsShalindar Christraj, Arvind Joshua Jaydev (Author) / Johnson, Shane R (Thesis advisor) / Alford, Terry L. (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2016