Matching Items (6)
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- All Subjects: pmc
- All Subjects: Radiation
- Genre: Academic theses
- Genre: Masters Thesis
- Creators: Barnaby, Hugh
- Member of: Theses and Dissertations
Description
New technologies enable the exploration of space, high-fidelity defense systems, lighting fast intercontinental communication systems as well as medical technologies that extend and improve patient lives. The basis for these technologies is high reliability electronics devised to meet stringent design goals and to operate consistently for many years deployed in the field. An on-going concern for engineers is the consequences of ionizing radiation exposure, specifically total dose effects. For many of the different applications, there is a likelihood of exposure to radiation, which can result in device degradation and potentially failure. While the total dose effects and the resulting degradation are a well-studied field and methodologies to help mitigate degradation have been developed, there is still a need for simulation techniques to help designers understand total dose effects within their design. To that end, the work presented here details simulation techniques to analyze as well as predict the total dose response of a circuit. In this dissertation the total dose effects are broken into two sub-categories, intra-device and inter-device effects in CMOS technology. Intra-device effects degrade the performance of both n-channel and p-channel transistors, while inter-device effects result in loss of device isolation. In this work, multiple case studies are presented for which total dose degradation is of concern. Through the simulation techniques, the individual device and circuit responses are modeled post-irradiation. The use of these simulation techniques by circuit designers allow predictive simulation of total dose effects, allowing focused design changes to be implemented to increase radiation tolerance of high reliability electronics.
ContributorsSchlenvogt, Garrett (Author) / Barnaby, Hugh (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2014
Description
Efficiency of components is an ever increasing area of importance to portable applications, where a finite battery means finite operating time. Higher efficiency devices need to be designed that don't compromise on the performance that the consumer has come to expect. Class D amplifiers deliver on the goal of increased efficiency, but at the cost of distortion. Class AB amplifiers have low efficiency, but high linearity. By modulating the supply voltage of a Class AB amplifier to make a Class H amplifier, the efficiency can increase while still maintaining the Class AB level of linearity. A 92dB Power Supply Rejection Ratio (PSRR) Class AB amplifier and a Class H amplifier were designed in a 0.24um process for portable audio applications. Using a multiphase buck converter increased the efficiency of the Class H amplifier while still maintaining a fast response time to respond to audio frequencies. The Class H amplifier had an efficiency above the Class AB amplifier by 5-7% from 5-30mW of output power without affecting the total harmonic distortion (THD) at the design specifications. The Class H amplifier design met all design specifications and showed performance comparable to the designed Class AB amplifier across 1kHz-20kHz and 0.01mW-30mW. The Class H design was able to output 30mW into 16Ohms without any increase in THD. This design shows that Class H amplifiers merit more research into their potential for increasing efficiency of audio amplifiers and that even simple designs can give significant increases in efficiency without compromising linearity.
ContributorsPeterson, Cory (Author) / Bakkaloglu, Bertan (Thesis advisor) / Barnaby, Hugh (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
ContributorsRajabi, Saba (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2014
Description
Programmable Metallization Cell (PMC) is a technology platform which utilizes mass transport in solid or liquid electrolyte coupled with electrochemical (redox) reactions to form or remove nanoscale metallic electrodeposits on or in the electrolyte. The ability to redistribute metal mass and form metallic nanostructure in or on a structure in situ, via the application of a bias on laterally placed electrodes, creates a large number of promising applications. A novel PMC-based lateral microwave switch was fabricated and characterized for use in microwave systems. It has demonstrated low insertion loss, high isolation, low voltage operation, low power and low energy consumption, and excellent linearity. Due to its non-volatile nature the switch operates with fewer biases and its simple planar geometry makes possible innovative device structures which can be potentially integrated into microwave power distribution circuits. PMC technology is also used to develop lateral dendritic metal electrodes. A lateral metallic dendritic network can be grown in a solid electrolyte (GeSe) or electrodeposited on SiO2 or Si using a water-mediated method. These dendritic electrodes grown in a solid electrolyte (GeSe) can be used to lower resistances for applications like self-healing interconnects despite its relatively low light transparency; while the dendritic electrodes grown using water-mediated method can be potentially integrated into solar cell applications, like replacing conventional Ag screen-printed top electrodes as they not only reduce resistances but also are highly transparent. This research effort also laid a solid foundation for developing dendritic plasmonic structures. A PMC-based lateral dendritic plasmonic structure is a device that has metallic dendritic networks grown electrochemically on SiO2 with a thin layer of surface metal nanoparticles in liquid electrolyte. These structures increase the distribution of particle sizes by connecting pre-deposited Ag nanoparticles into fractal structures and result in three significant effects, resonance red-shift, resonance broadening and resonance enhancement, on surface plasmon resonance for light trapping simultaneously, which can potentially enhance thin film solar cells' performance at longer wavelengths.
ContributorsRen, Minghan (Author) / Kozicki, Michael (Thesis advisor) / Schroder, Dieter (Committee member) / Roedel, Ronald (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2011
Description
The formation of dendrites in materials is usually seen as a failure-inducing defect in devices. Naturally, most research views dendrites as a problem needing a solution while focusing on process control techniques and post-mortem analysis of various stress patterns with the ultimate goal of total suppression of the structures. However, programmable metallization cell (PMC) technology embraces dendrite formation in chalcogenide glasses by utilizing the nascent conductive filaments as its core operative element. Furthermore, exciting More-than-Moore capabilities in the realms of device watermarking and hardware encryption schema are made possible by the random nature of dendritic branch growth. While dendritic structures have been observed and are well-documented in solid state materials, there is still no satisfactory theoretical model that can provide insight and a better understanding of how dendrites form. Ultimately, what is desired is the capability to predict the final structure of the conductive filament in a PMC device so that exciting new applications can be developed with PMC technology.
This thesis details the results of an effort to create a first-principles MATLAB simulation model that uses configurable physical parameters to generate images of dendritic structures. Generated images are compared against real-world samples. While growth has a significant random component, there are several reliable characteristics that form under similar parameter sets that can be monitored such as the relative length of major dendrite arms, common branching angles, and overall growth directionality.
The first simulation model that was constructed takes a Newtonian perspective of the problem and is implemented using the Euler numerical method. This model has several shortcomings stemming majorly from the simplistic treatment of the problem, but is highly performant. The model is then revised to use the Verlet numerical method, which increases the simulation accuracy, but still does not fully resolve the issues with the theoretical background. The final simulation model returns to the Euler method, but is a stochastic model based on Mott-Gurney’s ion hopping theory applied to solids. The results from this model are seen to match real samples the closest of all simulations.
This thesis details the results of an effort to create a first-principles MATLAB simulation model that uses configurable physical parameters to generate images of dendritic structures. Generated images are compared against real-world samples. While growth has a significant random component, there are several reliable characteristics that form under similar parameter sets that can be monitored such as the relative length of major dendrite arms, common branching angles, and overall growth directionality.
The first simulation model that was constructed takes a Newtonian perspective of the problem and is implemented using the Euler numerical method. This model has several shortcomings stemming majorly from the simplistic treatment of the problem, but is highly performant. The model is then revised to use the Verlet numerical method, which increases the simulation accuracy, but still does not fully resolve the issues with the theoretical background. The final simulation model returns to the Euler method, but is a stochastic model based on Mott-Gurney’s ion hopping theory applied to solids. The results from this model are seen to match real samples the closest of all simulations.
ContributorsFoss, Ryan (Author) / Kozicki, Michael N (Thesis advisor) / Barnaby, Hugh (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2016
Description
The RADiation sensitive Field Effect Transistor (RADFET) has been conventionally used to measure radiation dose levels. These dose sensors are calibrated in such a way that a shift in threshold voltage, due to a build-up of oxide-trapped charge, can be used to estimate the radiation dose. In order to estimate the radiation dose level using RADFET, a wired readout circuit is necessary. Using the same principle of oxide-trapped charge build-up, but by monitoring the change in capacitance instead of threshold voltage, a wireless dose sensor can be developed. This RADiation sensitive CAPacitor (RADCAP) mounted on a resonant patch antenna can then become a wireless dose sensor. From the resonant frequency, the capacitance can be extracted which can be mapped back to estimate the radiation dose level. The capacitor acts as both radiation dose sensor and resonator element in the passive antenna loop. Since the MOS capacitor is used in passive state, characterizing various parameters that affect the radiation sensitivity is essential. Oxide processing technique, choice of insulator material, and thickness of the insulator, critically affect the dose response of the sensor. A thicker oxide improves the radiation sensitivity but reduces the dynamic range of dose levels for which the sensor can be used. The oxide processing scheme primarily determines the interface trap charge and oxide-trapped charge development; controlling this parameter is critical to building a better dose sensor.
ContributorsSrinivasan Gopalan, Madusudanan (Author) / Barnaby, Hugh (Thesis advisor) / Holbert, Keith E. (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2010