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- All Subjects: Characterization
- Creators: Materials Science and Engineering Program
- Creators: Zhang, Yong-Hang
The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.
After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including etch-pit-density (EPD) measurements, cathodoluminescence (CL) imaging and X-ray topography (XRT), were explored, in attempting to gain better knowledge of the sparsely distributed defects. EPD revealed the distribution of dislocation-associated pits across the wafer. Unfortunately, the lack of contrast in images obtained by CL imaging and XRT indicated their inability to provide any quantitative information about defect density in these InAs/InAsSb T2SLs.
The nBn photodetectors based on mid-wave infrared (MWIR) and long-wave infrared (LWIR) InAs/InAsSb T2SLs were fabricated. The significant difference in Ga composition in the barrier layer coupled with different dark current behavior, suggested the possibility of different types of band alignment between the barrier layers and the absorbers. A positive charge density of 1.8 × 1017/cm3 in the barrier of MWIR nBn photodetector, as determined by electron holography, confirmed the presence of a potential well in its valence band, thus identifying type-II alignment. In contrast, the LWIR nBn photodetector was shown to have type-I alignment because no sign of positive charge was detected in its barrier.
Capacitance-voltage measurements were performed to investigate the temperature dependence of carrier densities in a metal-oxide-semiconductor (MOS) structure based on MWIR InAs/InAsSb T2SLs, and a nBn structure based on LWIR InAs/InAsSb T2SLs. No carrier freeze-out was observed in either sample, indicating very shallow donor levels. The decrease in carrier density when temperature increased was attributed to the increased density of holes that had been thermally excited from localized states near the oxide/semiconductor interface in the MOS sample. No deep-level traps were revealed in deep-level transient spectroscopy temperature scans.
There is surprisingly little scientific literature describing whether a hockey slap shot positively or negatively transfers to a driving golf swing. Golf and hockey use a similar kinematic sequence to send the ball / puck towards a target, but does that directly translate to positive skill transfer between the two sports, or are there other important factors that could result in a negative skill transfer? The aim of this study is to look further into the two kinematic sequences and determine their intertask skill transfer type. A field experiment was conducted, following a specific research design, in order to compare performance between two groups, one being familiar with the skill that may transfer (hockey slapshot) and the other group being unfamiliar. Both groups had no experience in the skill being tested (driving golf swing) and various data was collected as all of the subjects performed 10 golf swings. The results of the data analysis showed that the group with experience in hockey had a higher variability of ball distance and ball speed. There are many factors of a hockey slapshot that are likely to develop a negative intertask skill transfer, resulting in this group's high inconsistency when performing a golf swing. On the other hand, the group with hockey experience also had higher mean club speed, showing that some aspects of the hockey slapshot resulted in a positive skill transfer, aiding their ability to perform a golf swing.