Matching Items (5)
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- All Subjects: photovoltaics
- Creators: Alford, Terry
Description
Recent technology advancements in photovoltaics have enabled crystalline silicon (c-Si) solar cells to establish outstanding photoconversion efficiency records. Remarkable progresses in research and development have been made both on the silicon feedstock quality as well as the technology required for surface passivation, the two dominant sources of performance loss via recombination of photo-generated charge carriers within advanced solar cell architectures.
As these two aspects of the solar cell framework improve, the need for a thorough analysis of their respective contribution under varying operation conditions has emerged along with challenges related to the lack of sensitivity of available characterization techniques. The main objective of my thesis work has been to establish a deep understanding of both “intrinsic” and “extrinsic” recombination processes that govern performance in high-quality silicon absorbers. By studying each recombination mechanism as a function of illumination and temperature, I strive to identify the lifetime limiting defects and propose a path to engineer the ultimate silicon solar cell.
This dissertation presents a detailed description of the experimental procedure required to deconvolute surface recombination contributions from bulk recombination contributions when performing lifetime spectroscopy analysis. This work proves that temperature- and injection-dependent lifetime spectroscopy (TIDLS) sensitivity can be extended to impurities concentrations down to 109 cm-3, orders of magnitude below any other characterization technique available today. A new method for the analysis of TIDLS data denominated Defect Parameters Contour Mapping (DPCM) is presented with the aim of providing a visual and intuitive tool to identify the lifetime limiting impurities in silicon material. Surface recombination velocity results are modelled by applying appropriate approaches from literature to our experimentally evaluated data, demonstrating for the first time their capability to interpret temperature-dependent data. In this way, several new results are obtained which solve long disputed aspects of surface passivation mechanisms. Finally, we experimentally evaluate the temperature-dependence of Auger lifetime and its impact on a theoretical intrinsically limited solar cell. These results decisively point to the need for a new Auger lifetime parameterization accounting for its temperature-dependence, which would in turn help understand the ultimate theoretical efficiency limit for a solar cell under real operation conditions.
As these two aspects of the solar cell framework improve, the need for a thorough analysis of their respective contribution under varying operation conditions has emerged along with challenges related to the lack of sensitivity of available characterization techniques. The main objective of my thesis work has been to establish a deep understanding of both “intrinsic” and “extrinsic” recombination processes that govern performance in high-quality silicon absorbers. By studying each recombination mechanism as a function of illumination and temperature, I strive to identify the lifetime limiting defects and propose a path to engineer the ultimate silicon solar cell.
This dissertation presents a detailed description of the experimental procedure required to deconvolute surface recombination contributions from bulk recombination contributions when performing lifetime spectroscopy analysis. This work proves that temperature- and injection-dependent lifetime spectroscopy (TIDLS) sensitivity can be extended to impurities concentrations down to 109 cm-3, orders of magnitude below any other characterization technique available today. A new method for the analysis of TIDLS data denominated Defect Parameters Contour Mapping (DPCM) is presented with the aim of providing a visual and intuitive tool to identify the lifetime limiting impurities in silicon material. Surface recombination velocity results are modelled by applying appropriate approaches from literature to our experimentally evaluated data, demonstrating for the first time their capability to interpret temperature-dependent data. In this way, several new results are obtained which solve long disputed aspects of surface passivation mechanisms. Finally, we experimentally evaluate the temperature-dependence of Auger lifetime and its impact on a theoretical intrinsically limited solar cell. These results decisively point to the need for a new Auger lifetime parameterization accounting for its temperature-dependence, which would in turn help understand the ultimate theoretical efficiency limit for a solar cell under real operation conditions.
ContributorsBernardini, Simone (Author) / Bertoni, Mariana I (Thesis advisor) / Coletti, Gianluca (Committee member) / Bowden, Stuart (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2018
Description
Ethylene vinyl acetate (EVA) is the most commonly used encapsulant in photovoltaic modules. However, EVA degrades over time and causes performance losses in PV system. Therefore, EVA degradation is a matter of concern from a durability point of view.
This work compares EVA encapsulant degradation in glass/backsheet and glass/glass field-aged PV modules. EVA was extracted from three field-aged modules (two glass/backsheet and one glass/glass modules) from three different manufacturers from various regions (cell edges, cell centers, and non-cell region) from each module based on their visual and UV Fluorescence images. Characterization techniques such as I-V measurements, Colorimetry, Different Scanning Calorimetry, Thermogravimetric Analysis, Raman spectroscopy, and Fourier Transform Infrared Spectroscopy were performed on EVA samples.
The intensity of EVA discoloration was quantified using colorimetric measurements. Module performance parameters like Isc and Pmax degradation rates were calculated from I-V measurements. Properties such as degree of crystallinity, vinyl acetate content and degree of crosslinking were calculated from DSC, TGA, and Raman measurements, respectively. Polyenes responsible for EVA browning were identified in FTIR spectra.
The results from the characterization techniques confirmed that when EVA undergoes degradation, crosslinking in EVA increases beyond 90% causing a decrease in the degree of crystallinity and an increase in vinyl acetate content of EVA. Presence of polyenes in FTIR spectra of degraded EVA confirmed the occurrence of Norrish II reaction. However, photobleaching occurred in glass/backsheet modules due to the breathable backsheet whereas no photobleaching occurred in glass/glass modules because they were hermetically sealed. Hence, the yellowness index along with the Isc and Pmax degradation rates of EVA in glass/glass module is higher than that in glass/backsheet modules.
The results implied that more acetic acid was produced in the non-cell region due to its double layer of EVA compared to the front EVA from cell region. But, since glass/glass module is hermetically sealed, acetic acid gets entrapped inside the module further accelerating EVA degradation whereas it diffuses out through backsheet in glass/backsheet modules. Hence, it can be said that EVA might be a good encapsulant for glass/backsheet modules, but the same cannot be said for glass/glass modules.
This work compares EVA encapsulant degradation in glass/backsheet and glass/glass field-aged PV modules. EVA was extracted from three field-aged modules (two glass/backsheet and one glass/glass modules) from three different manufacturers from various regions (cell edges, cell centers, and non-cell region) from each module based on their visual and UV Fluorescence images. Characterization techniques such as I-V measurements, Colorimetry, Different Scanning Calorimetry, Thermogravimetric Analysis, Raman spectroscopy, and Fourier Transform Infrared Spectroscopy were performed on EVA samples.
The intensity of EVA discoloration was quantified using colorimetric measurements. Module performance parameters like Isc and Pmax degradation rates were calculated from I-V measurements. Properties such as degree of crystallinity, vinyl acetate content and degree of crosslinking were calculated from DSC, TGA, and Raman measurements, respectively. Polyenes responsible for EVA browning were identified in FTIR spectra.
The results from the characterization techniques confirmed that when EVA undergoes degradation, crosslinking in EVA increases beyond 90% causing a decrease in the degree of crystallinity and an increase in vinyl acetate content of EVA. Presence of polyenes in FTIR spectra of degraded EVA confirmed the occurrence of Norrish II reaction. However, photobleaching occurred in glass/backsheet modules due to the breathable backsheet whereas no photobleaching occurred in glass/glass modules because they were hermetically sealed. Hence, the yellowness index along with the Isc and Pmax degradation rates of EVA in glass/glass module is higher than that in glass/backsheet modules.
The results implied that more acetic acid was produced in the non-cell region due to its double layer of EVA compared to the front EVA from cell region. But, since glass/glass module is hermetically sealed, acetic acid gets entrapped inside the module further accelerating EVA degradation whereas it diffuses out through backsheet in glass/backsheet modules. Hence, it can be said that EVA might be a good encapsulant for glass/backsheet modules, but the same cannot be said for glass/glass modules.
ContributorsPatel, Aesha Parimalbhai (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Green, Matthew (Committee member) / Mu, Bin (Committee member) / Arizona State University (Publisher)
Created2018
Description
In order to meet climate targets, the solar photovoltaic industry must increase photovoltaic (PV) deployment and cost competitiveness over its business-as-usual trajectory. This requires more efficient PV modules that use less expensive materials, and longer operational lifetime. The work presented here approaches this challenge with a novel metallization method for solar PV and electronic devices.
This document outlines work completed to this end. Chapter 1 introduces the areas for cost reductions and improvements in efficiency to drive down the cost per watt of solar modules. Next, in Chapter 2, conventional and advanced metallization methods are reviewed, and our proposed solution of dispense printed reactive inks is introduced. Chapter 3 details a proof of concept study for reactive silver ink as front metallization for solar cells. Furthermore, Chapter 3 details characterization of the optical and electrical properties of reactive silver ink metallization, which is important to understanding the origins of problems related to metallization, enabling approaches to minimize power losses in full devices. Chapter 4 describes adhesion and specific contact resistance of reactive ink metallizations on silicon heterojunction solar cells. Chapter 5 compares performance of silicon heterojunction solar cells with front grids formed from reactive ink metallization and conventional, commercially available metallization. Performance and degradation throughout 1000 h of accelerated environmental exposure are described before detailing an isolated corrosion experiment for different silver-based metallizations. Finally, Chapter 6 summarizes the main contributions of this work.
The major goal of this project is to evaluate potential of a new metallization technique –high-precision dispense printing of reactive inks–to become a high efficiency replacement for solar cell metallization through optical and electrical characterization, evaluation of durability and reliability, and commercialization research. Although this work primarily describes the application of reactive silver inks as front-metallization for silicon heterojunction solar cells, the work presented here provides a framework for evaluation of reactive inks as metallization for various solar cell architectures and electronic devices.
This document outlines work completed to this end. Chapter 1 introduces the areas for cost reductions and improvements in efficiency to drive down the cost per watt of solar modules. Next, in Chapter 2, conventional and advanced metallization methods are reviewed, and our proposed solution of dispense printed reactive inks is introduced. Chapter 3 details a proof of concept study for reactive silver ink as front metallization for solar cells. Furthermore, Chapter 3 details characterization of the optical and electrical properties of reactive silver ink metallization, which is important to understanding the origins of problems related to metallization, enabling approaches to minimize power losses in full devices. Chapter 4 describes adhesion and specific contact resistance of reactive ink metallizations on silicon heterojunction solar cells. Chapter 5 compares performance of silicon heterojunction solar cells with front grids formed from reactive ink metallization and conventional, commercially available metallization. Performance and degradation throughout 1000 h of accelerated environmental exposure are described before detailing an isolated corrosion experiment for different silver-based metallizations. Finally, Chapter 6 summarizes the main contributions of this work.
The major goal of this project is to evaluate potential of a new metallization technique –high-precision dispense printing of reactive inks–to become a high efficiency replacement for solar cell metallization through optical and electrical characterization, evaluation of durability and reliability, and commercialization research. Although this work primarily describes the application of reactive silver inks as front-metallization for silicon heterojunction solar cells, the work presented here provides a framework for evaluation of reactive inks as metallization for various solar cell architectures and electronic devices.
ContributorsJeffries, April M (Author) / Bertoni, Mariana I (Thesis advisor) / Saive, Rebecca (Committee member) / Holman, Zachary (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2019
Description
This is a two-part thesis assessing the long-term reliability of photovoltaic modules.
Part 1: Manufacturing dependent reliability - Adapting FMECA for quality control in PV module manufacturing
This part is aimed at introducing a statistical tool in quality assessments in PV module manufacturing. Developed jointly by ASU-PRL and Clean Energy Associates, this work adapts the Failure Mode Effect and Criticality Analysis (FMECA, IEC 60812) to quantify the impact of failure modes observed at the time of manufacturing. The method was developed through analysis of nearly 9000 modules at the pre-shipment evaluation stage in module manufacturing facilities across south east Asia. Numerous projects were analyzed to generate RPN (Risk Priority Number) scores for projects. In this manner, it was possibly to quantitatively assess the risk being carried the project at the time of shipment of modules. The objective of this work was to develop a benchmarking system that would allow for accurate quantitative estimations of risk mitigation and project bankability.
Part 2: Climate dependent reliability - Activation energy determination for climate specific degradation modes
This work attempts to model the parameter (Isc or Rs) degradation rate of modules as a function of the climatic parameters (i.e. temperature, relative humidity and ultraviolet radiation) at the site. The objective of this work was to look beyond the power degradation rate and model based on the performance parameter directly affected by the degradation mode under investigation (encapsulant browning or IMS degradation of solder bonds). Different physical models were tested and validated through comparing the activation energy obtained for each degradation mode. It was concluded that, for the degradation of the solder bonds within the module, the Pecks equation (function of temperature and relative humidity) modelled with Rs increase was the best fit; the activation energy ranging from 0.4 – 0.7 eV based on the climate type. For encapsulant browning, the Modified Arrhenius equation (function of temperature and UV) seemed to be the best fit presently, yielding an activation energy of 0.3 eV. The work was concluded by suggesting possible modifications to the models based on degradation pathways unaccounted for in the present work.
Part 1: Manufacturing dependent reliability - Adapting FMECA for quality control in PV module manufacturing
This part is aimed at introducing a statistical tool in quality assessments in PV module manufacturing. Developed jointly by ASU-PRL and Clean Energy Associates, this work adapts the Failure Mode Effect and Criticality Analysis (FMECA, IEC 60812) to quantify the impact of failure modes observed at the time of manufacturing. The method was developed through analysis of nearly 9000 modules at the pre-shipment evaluation stage in module manufacturing facilities across south east Asia. Numerous projects were analyzed to generate RPN (Risk Priority Number) scores for projects. In this manner, it was possibly to quantitatively assess the risk being carried the project at the time of shipment of modules. The objective of this work was to develop a benchmarking system that would allow for accurate quantitative estimations of risk mitigation and project bankability.
Part 2: Climate dependent reliability - Activation energy determination for climate specific degradation modes
This work attempts to model the parameter (Isc or Rs) degradation rate of modules as a function of the climatic parameters (i.e. temperature, relative humidity and ultraviolet radiation) at the site. The objective of this work was to look beyond the power degradation rate and model based on the performance parameter directly affected by the degradation mode under investigation (encapsulant browning or IMS degradation of solder bonds). Different physical models were tested and validated through comparing the activation energy obtained for each degradation mode. It was concluded that, for the degradation of the solder bonds within the module, the Pecks equation (function of temperature and relative humidity) modelled with Rs increase was the best fit; the activation energy ranging from 0.4 – 0.7 eV based on the climate type. For encapsulant browning, the Modified Arrhenius equation (function of temperature and UV) seemed to be the best fit presently, yielding an activation energy of 0.3 eV. The work was concluded by suggesting possible modifications to the models based on degradation pathways unaccounted for in the present work.
ContributorsPore, Shantanu (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Green, Matthew (Thesis advisor) / Srinivasan, Devrajan (Committee member) / Arizona State University (Publisher)
Created2017
Description
Crystalline silicon covers more than 85% of the global photovoltaics industry and has sustained a nearly 30% year-over-year growth rate. Continued cost and capital expenditure (CAPEX) reductions are needed to sustain this growth. Using thin silicon wafers well below the current industry standard of 160 µm can reduce manufacturing cost, CAPEX, and levelized cost of electricity. Additionally, thinner wafers enable more flexible and lighter module designs, making them more compelling in market segments like building-integrated photovoltaics, portable power, aerospace, and automotive industries. Advanced architectures and superior surface passivation schemes are needed to enable the use of very thin silicon wafers. Silicon heterojunction (SHJ) and SHJ with interdigitated back contact solar cells have demonstrated open-circuit voltages surpassing 720 mV and the potential to surpass 25% conversion efficiency. These factors have led to an increasing interest in exploring SHJ solar cells on thin wafers. In this work, the passivation capability of the thin intrinsic hydrogenated amorphous silicon layer is improved by controlling the deposition temperature and the silane-to-hydrogen dilution ratio. An effective way to parametrize surface recombination is by using surface saturation current density and a very low surface saturation density is achieved on textured wafers for wafer thicknesses ranging between 40 and 180 µm which is an order of magnitude lesser compared to the prevalent industry standards. Implied open-circuit voltages over 760 mV were accomplished on SHJ structures deposited on n-type silicon wafers with thicknesses below 50 µm. An analytical model is also described for a better understanding of the variation of the recombination fractions for varying substrate thicknesses. The potential of using very thin wafers is also established by manufacturing SHJ solar cells, using industrially pertinent processing steps, on 40 µm thin standalone wafers while achieving maximum efficiency of 20.7%. It is also demonstrated that 40 µm thin SHJ solar cells can be manufactured using these processes on large areas. An analysis of the percentage contribution of current, voltage, and resistive losses are also characterized for the SHJ devices fabricated in this work for varying substrate thicknesses.
ContributorsBalaji, Pradeep (Author) / Bowden, Stuart (Thesis advisor) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Arizona State University (Publisher)
Created2021