Matching Items (6)
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- All Subjects: photovoltaics
- Creators: Alford, Terry
- Creators: Schroder, Dieter
Description
This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on GaSb or InAs substrates for current-matched subcells with minimal defect densities. CdSe/CdTe superlattices are proposed as a potential candidate for a subcell in the MJ solar cell designs using this material system, and therefore the material properties of the superlattices are studied. The high structural qualities of the superlattices are obtained from high resolution X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The effective bandgap energies of the superlattices obtained from the photoluminescence (PL) measurements vary with the layer thicknesses, and are smaller than the bandgap energies of either the constituent material. Furthermore, The PL peak position measured at the steady state exhibits a blue shift that increases with the excess carrier concentration. These results confirm a strong type-II band edge alignment between CdSe and CdTe. The valence band offset between unstrained CdSe and CdTe is determined as 0.63 eV±0.06 eV by fitting the measured PL peak positions using the Kronig-Penney model. The blue shift in PL peak position is found to be primarily caused by the band bending effect based on self-consistent solutions of the Schrödinger and Poisson equations. Secondly, the design of the contact grid layout is studied to maximize the power output and energy conversion efficiency for concentrator solar cells. Because the conventional minimum power loss method used for the contact design is not accurate in determining the series resistance loss, a method of using a distributed series resistance model to maximize the power output is proposed for the contact design. It is found that the junction recombination loss in addition to the series resistance loss and shadowing loss can significantly affect the contact layout. The optimal finger spacing and maximum efficiency calculated by the two methods are close, and the differences are dependent on the series resistance and saturation currents of solar cells. Lastly, the accurate measurements of external quantum efficiency (EQE) are important for the design and development of MJ solar cells. However, the electrical and optical couplings between the subcells have caused EQE measurement artifacts. In order to interpret the measurement artifacts, DC and small signal models are built for the bias condition and the scan of chopped monochromatic light in the EQE measurements. Characterization methods are developed for the device parameters used in the models. The EQE measurement artifacts are found to be caused by the shunt and luminescence coupling effects, and can be minimized using proper voltage and light biases. Novel measurement methods using a pulse voltage bias or a pulse light bias are invented to eliminate the EQE measurement artifacts. These measurement methods are nondestructive and easy to implement. The pulse voltage bias or pulse light bias is superimposed on the conventional DC voltage and light biases, in order to control the operating points of the subcells and counterbalance the effects of shunt and luminescence coupling. The methods are demonstrated for the first time to effectively eliminate the measurement artifacts.
ContributorsLi, Jingjing (Author) / Zhang, Yong-Hang (Thesis advisor) / Tao, Meng (Committee member) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Description
Recent technology advancements in photovoltaics have enabled crystalline silicon (c-Si) solar cells to establish outstanding photoconversion efficiency records. Remarkable progresses in research and development have been made both on the silicon feedstock quality as well as the technology required for surface passivation, the two dominant sources of performance loss via recombination of photo-generated charge carriers within advanced solar cell architectures.
As these two aspects of the solar cell framework improve, the need for a thorough analysis of their respective contribution under varying operation conditions has emerged along with challenges related to the lack of sensitivity of available characterization techniques. The main objective of my thesis work has been to establish a deep understanding of both “intrinsic” and “extrinsic” recombination processes that govern performance in high-quality silicon absorbers. By studying each recombination mechanism as a function of illumination and temperature, I strive to identify the lifetime limiting defects and propose a path to engineer the ultimate silicon solar cell.
This dissertation presents a detailed description of the experimental procedure required to deconvolute surface recombination contributions from bulk recombination contributions when performing lifetime spectroscopy analysis. This work proves that temperature- and injection-dependent lifetime spectroscopy (TIDLS) sensitivity can be extended to impurities concentrations down to 109 cm-3, orders of magnitude below any other characterization technique available today. A new method for the analysis of TIDLS data denominated Defect Parameters Contour Mapping (DPCM) is presented with the aim of providing a visual and intuitive tool to identify the lifetime limiting impurities in silicon material. Surface recombination velocity results are modelled by applying appropriate approaches from literature to our experimentally evaluated data, demonstrating for the first time their capability to interpret temperature-dependent data. In this way, several new results are obtained which solve long disputed aspects of surface passivation mechanisms. Finally, we experimentally evaluate the temperature-dependence of Auger lifetime and its impact on a theoretical intrinsically limited solar cell. These results decisively point to the need for a new Auger lifetime parameterization accounting for its temperature-dependence, which would in turn help understand the ultimate theoretical efficiency limit for a solar cell under real operation conditions.
As these two aspects of the solar cell framework improve, the need for a thorough analysis of their respective contribution under varying operation conditions has emerged along with challenges related to the lack of sensitivity of available characterization techniques. The main objective of my thesis work has been to establish a deep understanding of both “intrinsic” and “extrinsic” recombination processes that govern performance in high-quality silicon absorbers. By studying each recombination mechanism as a function of illumination and temperature, I strive to identify the lifetime limiting defects and propose a path to engineer the ultimate silicon solar cell.
This dissertation presents a detailed description of the experimental procedure required to deconvolute surface recombination contributions from bulk recombination contributions when performing lifetime spectroscopy analysis. This work proves that temperature- and injection-dependent lifetime spectroscopy (TIDLS) sensitivity can be extended to impurities concentrations down to 109 cm-3, orders of magnitude below any other characterization technique available today. A new method for the analysis of TIDLS data denominated Defect Parameters Contour Mapping (DPCM) is presented with the aim of providing a visual and intuitive tool to identify the lifetime limiting impurities in silicon material. Surface recombination velocity results are modelled by applying appropriate approaches from literature to our experimentally evaluated data, demonstrating for the first time their capability to interpret temperature-dependent data. In this way, several new results are obtained which solve long disputed aspects of surface passivation mechanisms. Finally, we experimentally evaluate the temperature-dependence of Auger lifetime and its impact on a theoretical intrinsically limited solar cell. These results decisively point to the need for a new Auger lifetime parameterization accounting for its temperature-dependence, which would in turn help understand the ultimate theoretical efficiency limit for a solar cell under real operation conditions.
ContributorsBernardini, Simone (Author) / Bertoni, Mariana I (Thesis advisor) / Coletti, Gianluca (Committee member) / Bowden, Stuart (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2018
Description
In order to meet climate targets, the solar photovoltaic industry must increase photovoltaic (PV) deployment and cost competitiveness over its business-as-usual trajectory. This requires more efficient PV modules that use less expensive materials, and longer operational lifetime. The work presented here approaches this challenge with a novel metallization method for solar PV and electronic devices.
This document outlines work completed to this end. Chapter 1 introduces the areas for cost reductions and improvements in efficiency to drive down the cost per watt of solar modules. Next, in Chapter 2, conventional and advanced metallization methods are reviewed, and our proposed solution of dispense printed reactive inks is introduced. Chapter 3 details a proof of concept study for reactive silver ink as front metallization for solar cells. Furthermore, Chapter 3 details characterization of the optical and electrical properties of reactive silver ink metallization, which is important to understanding the origins of problems related to metallization, enabling approaches to minimize power losses in full devices. Chapter 4 describes adhesion and specific contact resistance of reactive ink metallizations on silicon heterojunction solar cells. Chapter 5 compares performance of silicon heterojunction solar cells with front grids formed from reactive ink metallization and conventional, commercially available metallization. Performance and degradation throughout 1000 h of accelerated environmental exposure are described before detailing an isolated corrosion experiment for different silver-based metallizations. Finally, Chapter 6 summarizes the main contributions of this work.
The major goal of this project is to evaluate potential of a new metallization technique –high-precision dispense printing of reactive inks–to become a high efficiency replacement for solar cell metallization through optical and electrical characterization, evaluation of durability and reliability, and commercialization research. Although this work primarily describes the application of reactive silver inks as front-metallization for silicon heterojunction solar cells, the work presented here provides a framework for evaluation of reactive inks as metallization for various solar cell architectures and electronic devices.
This document outlines work completed to this end. Chapter 1 introduces the areas for cost reductions and improvements in efficiency to drive down the cost per watt of solar modules. Next, in Chapter 2, conventional and advanced metallization methods are reviewed, and our proposed solution of dispense printed reactive inks is introduced. Chapter 3 details a proof of concept study for reactive silver ink as front metallization for solar cells. Furthermore, Chapter 3 details characterization of the optical and electrical properties of reactive silver ink metallization, which is important to understanding the origins of problems related to metallization, enabling approaches to minimize power losses in full devices. Chapter 4 describes adhesion and specific contact resistance of reactive ink metallizations on silicon heterojunction solar cells. Chapter 5 compares performance of silicon heterojunction solar cells with front grids formed from reactive ink metallization and conventional, commercially available metallization. Performance and degradation throughout 1000 h of accelerated environmental exposure are described before detailing an isolated corrosion experiment for different silver-based metallizations. Finally, Chapter 6 summarizes the main contributions of this work.
The major goal of this project is to evaluate potential of a new metallization technique –high-precision dispense printing of reactive inks–to become a high efficiency replacement for solar cell metallization through optical and electrical characterization, evaluation of durability and reliability, and commercialization research. Although this work primarily describes the application of reactive silver inks as front-metallization for silicon heterojunction solar cells, the work presented here provides a framework for evaluation of reactive inks as metallization for various solar cell architectures and electronic devices.
ContributorsJeffries, April M (Author) / Bertoni, Mariana I (Thesis advisor) / Saive, Rebecca (Committee member) / Holman, Zachary (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2019
Description
Potential-Induced Degradation (PID) is an extremely serious photovoltaic (PV) durability issue significantly observed in crystalline silicon PV modules due to its rapid power degradation, particularly when compared to other PV degradation modes. The focus of this dissertation is to understand PID mechanisms and to develop PID-free cells and modules. PID-affected modules have been claimed to be fully recovered by high temperature and reverse potential treatments. However, the results obtained in this work indicate that the near-full recovery of efficiency can be achieved only at high irradiance conditions, but the full recovery of efficiency at low irradiance levels, of shunt resistance, and of quantum efficiency (QE) at short wavelengths could not be achieved. The QE loss observed at short wavelengths was modeled by changing the front surface recombination velocity. The QE scaling error due to a measurement on a PID shunted cell was addressed by developing a very low input impedance accessory applicable to an existing QE system. The impacts of silicon nitride (SiNx) anti-reflection coating (ARC) refractive index (RI) and emitter sheet resistance on PID are presented. Low RI ARC cells (1.87) were observed to be PID-susceptible whereas high RI ARC cells (2.05) were determined to be PID-resistant using a method employing high dose corona charging followed by time-resolved measurement of surface voltage. It has been demonstrated that the PID could be prevented by deploying an emitter having a low sheet resistance (~ 60 /sq) even if a PID-susceptible ARC is used in a cell. Secondary ion mass spectroscopy (SIMS) results suggest that a high phosphorous emitter layer hinders sodium transport, which is responsible for the PID. Cells can be screened for PID susceptibility by illuminated lock-in thermography (ILIT) during the cell fabrication process, and the sample structure for this can advantageously be simplified as long as the sample has the SiNx ARC and an aluminum back surface field. Finally, this dissertation presents a prospective method for eliminating or minimizing the PID issue either in the factory during manufacturing or in the field after system installation. The method uses commercially available, thin, and flexible Corning® Willow® Glass sheets or strips on the PV module glass superstrates, disrupting the current leakage path from the cells to the grounded frame.
ContributorsOh, Jaewon (Author) / Bowden, Stuart (Thesis advisor) / Tamizhmani, Govindasamy (Thesis advisor) / Honsberg, Christiana (Committee member) / Hacke, Peter (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2016
Description
As the world energy demand increases, semiconductor devices with high energy conversion efficiency become more and more desirable. The energy conversion consists of two distinct processes, namely energy generation and usage. In this dissertation, novel multi-junction solar cells and light emitting diodes (LEDs) are proposed and studied for high energy conversion efficiency in both processes, respectively. The first half of this dissertation discusses the practically achievable energy conversion efficiency limit of solar cells. Since the demonstration of the Si solar cell in 1954, the performance of solar cells has been improved tremendously and recently reached 41.6% energy conversion efficiency. However, it seems rather challenging to further increase the solar cell efficiency. The state-of-the-art triple junction solar cells are analyzed to help understand the limiting factors. To address these issues, the monolithically integrated II-VI and III-V material system is proposed for solar cell applications. This material system covers the entire solar spectrum with a continuous selection of energy bandgaps and can be grown lattice matched on a GaSb substrate. Moreover, six four-junction solar cells are designed for AM0 and AM1.5D solar spectra based on this material system, and new design rules are proposed. The achievable conversion efficiencies for these designs are calculated using the commercial software package Silvaco with real material parameters. The second half of this dissertation studies the semiconductor luminescence refrigeration, which corresponds to over 100% energy usage efficiency. Although cooling has been realized in rare-earth doped glass by laser pumping, semiconductor based cooling is yet to be realized. In this work, a device structure that monolithically integrates a GaAs hemisphere with an InGaAs/GaAs quantum-well thin slab LED is proposed to realize cooling in semiconductor. The device electrical and optical performance is calculated. The proposed device then is fabricated using nine times photolithography and eight masks. The critical process steps, such as photoresist reflow and dry etch, are simulated to insure successful processing. Optical testing is done with the devices at various laser injection levels and the internal quantum efficiency, external quantum efficiency and extraction efficiency are measured.
ContributorsWu, Songnan (Author) / Zhang, Yong-Hang (Thesis advisor) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Belitsky, Andrei (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2010
Description
Crystalline silicon covers more than 85% of the global photovoltaics industry and has sustained a nearly 30% year-over-year growth rate. Continued cost and capital expenditure (CAPEX) reductions are needed to sustain this growth. Using thin silicon wafers well below the current industry standard of 160 µm can reduce manufacturing cost, CAPEX, and levelized cost of electricity. Additionally, thinner wafers enable more flexible and lighter module designs, making them more compelling in market segments like building-integrated photovoltaics, portable power, aerospace, and automotive industries. Advanced architectures and superior surface passivation schemes are needed to enable the use of very thin silicon wafers. Silicon heterojunction (SHJ) and SHJ with interdigitated back contact solar cells have demonstrated open-circuit voltages surpassing 720 mV and the potential to surpass 25% conversion efficiency. These factors have led to an increasing interest in exploring SHJ solar cells on thin wafers. In this work, the passivation capability of the thin intrinsic hydrogenated amorphous silicon layer is improved by controlling the deposition temperature and the silane-to-hydrogen dilution ratio. An effective way to parametrize surface recombination is by using surface saturation current density and a very low surface saturation density is achieved on textured wafers for wafer thicknesses ranging between 40 and 180 µm which is an order of magnitude lesser compared to the prevalent industry standards. Implied open-circuit voltages over 760 mV were accomplished on SHJ structures deposited on n-type silicon wafers with thicknesses below 50 µm. An analytical model is also described for a better understanding of the variation of the recombination fractions for varying substrate thicknesses. The potential of using very thin wafers is also established by manufacturing SHJ solar cells, using industrially pertinent processing steps, on 40 µm thin standalone wafers while achieving maximum efficiency of 20.7%. It is also demonstrated that 40 µm thin SHJ solar cells can be manufactured using these processes on large areas. An analysis of the percentage contribution of current, voltage, and resistive losses are also characterized for the SHJ devices fabricated in this work for varying substrate thicknesses.
ContributorsBalaji, Pradeep (Author) / Bowden, Stuart (Thesis advisor) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Arizona State University (Publisher)
Created2021