Matching Items (18)
Filtering by
- Genre: Masters Thesis
- Creators: Arizona State University
- Creators: Chakraborty, Bijeta
- Member of: ASU Electronic Theses and Dissertations
Description
Microwave dielectrics are widely used to make resonators and filters in telecommunication systems. The production of thin films with high dielectric constant and low loss could potentially enable a marked reduction in the size of devices and systems. However, studies of these materials in thin film form are very sparse. In this research, experiments were carried out on practical high-performance dielectrics including ZrTiO4-ZnNb2O6 (ZTZN) and Ba(Co,Zn)1/3Nb2/3O3 (BCZN) with high dielectric constant and low loss tangent. Thin films were deposited by laser ablation on various substrates, with a systematical study of growth conditions like substrate temperature, oxygen pressure and annealing to optimize the film quality, and the compositional, microstructural, optical and electric properties were characterized. The deposited ZTZN films were randomly oriented polycrystalline on Si substrate and textured on MgO substrate with a tetragonal lattice change at elevated temperature. The BCZN films deposited on MgO substrate showed superior film quality relative to that on other substrates, which grow epitaxially with an orientation of (001) // MgO (001) and (100) // MgO (100) when substrate temperature was above 500 oC. In-situ annealing at growth temperature in 200 mTorr oxygen pressure was found to enhance the quality of the films, reducing the peak width of the X-ray Diffraction (XRD) rocking curve to 0.53o and the χmin of channeling Rutherford Backscattering Spectrometry (RBS) to 8.8% when grown at 800oC. Atomic Force Microscopy (AFM) was used to study the topography and found a monotonic decrease in the surface roughness when the growth temperature increased. Optical absorption and transmission measurements were used to determine the energy bandgap and the refractive index respectively. A low-frequency dielectric constant of 34 was measured using a planar interdigital measurement structure. The resistivity of the film is ~3×1010 ohm·cm at room temperature and has an activation energy of thermal activated current of 0.66 eV.
ContributorsLi, You (Author) / Newman, Nathan (Thesis advisor) / Alford, Terry (Committee member) / Singh, Rakesh (Committee member) / Arizona State University (Publisher)
Created2013
Description
Efficiency of components is an ever increasing area of importance to portable applications, where a finite battery means finite operating time. Higher efficiency devices need to be designed that don't compromise on the performance that the consumer has come to expect. Class D amplifiers deliver on the goal of increased efficiency, but at the cost of distortion. Class AB amplifiers have low efficiency, but high linearity. By modulating the supply voltage of a Class AB amplifier to make a Class H amplifier, the efficiency can increase while still maintaining the Class AB level of linearity. A 92dB Power Supply Rejection Ratio (PSRR) Class AB amplifier and a Class H amplifier were designed in a 0.24um process for portable audio applications. Using a multiphase buck converter increased the efficiency of the Class H amplifier while still maintaining a fast response time to respond to audio frequencies. The Class H amplifier had an efficiency above the Class AB amplifier by 5-7% from 5-30mW of output power without affecting the total harmonic distortion (THD) at the design specifications. The Class H amplifier design met all design specifications and showed performance comparable to the designed Class AB amplifier across 1kHz-20kHz and 0.01mW-30mW. The Class H design was able to output 30mW into 16Ohms without any increase in THD. This design shows that Class H amplifiers merit more research into their potential for increasing efficiency of audio amplifiers and that even simple designs can give significant increases in efficiency without compromising linearity.
ContributorsPeterson, Cory (Author) / Bakkaloglu, Bertan (Thesis advisor) / Barnaby, Hugh (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
Multiple quantum well (MQW) structures have been employed in a variety of solid state devices. The InGaAs/GaAs material system is of special interest for many optoelectronic applications. This study examines epitaxial growth and defect creation in InGaAs/GaAs MQWs at its initial stage. Correlations between physical properties, crystal perfection of epitaxial structures, and growth conditions under which desired properties are achieved appear as highly important for the realization and final performance of semiconductor based devices.
Molecular beam epitaxy was utilized to grow InGaAs/GaAs MQW structures with a variation in deposition temperature Tdep among the samples to change crystalline and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature Tdep=505°C was found for 20% In composition. The density of 60° primary and secondary dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection, as evaluated by lateral and vertical coherence lengths and diffuse scattering in reciprocal space maps. Likewise, the strength of non-radiative Shockley-Read-Hall recombination increased as deposition temperature was reduced. Elevated deposition temperature led to InGaAs decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering. High available thermal energy increased atomic surface diffusivity and resulted in growth surface instability against perturbations, manifesting in lateral layer thickness undulations. Carriers in structures grown at elevated temperature experience localization in local energy minima.InGaAs/GaAs MQW structures reveal correlation between their crystal quality and optical properties. It can be suggested that there is an optimal growth temperature range for each In composition with high crystal perfection and best physical response.
Molecular beam epitaxy was utilized to grow InGaAs/GaAs MQW structures with a variation in deposition temperature Tdep among the samples to change crystalline and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature Tdep=505°C was found for 20% In composition. The density of 60° primary and secondary dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection, as evaluated by lateral and vertical coherence lengths and diffuse scattering in reciprocal space maps. Likewise, the strength of non-radiative Shockley-Read-Hall recombination increased as deposition temperature was reduced. Elevated deposition temperature led to InGaAs decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering. High available thermal energy increased atomic surface diffusivity and resulted in growth surface instability against perturbations, manifesting in lateral layer thickness undulations. Carriers in structures grown at elevated temperature experience localization in local energy minima.InGaAs/GaAs MQW structures reveal correlation between their crystal quality and optical properties. It can be suggested that there is an optimal growth temperature range for each In composition with high crystal perfection and best physical response.
ContributorsKarow, Matthias (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Faleev, Nikolai N (Committee member) / Ning, Cun-Zheng (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this work, I worked on the synthesis and characterization of nanowires and belts, grown using different materials, in Chemical Vapor Deposition (CVD) system with catalytic growth method. Through this thesis, I utilized the Photoluminescence (PL), Secondary Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray diffraction (XRD) analyses to find out the properties of Erbium Chloride Silicate (ECS) and two segment CdS-CdSe samples. In the first part of my research, growth of very new material, Erbium Chloride Silicate (ECS), in form of core/shell Si/ECS and pure ECS nanowires, was demonstrated. This new material has very fascinating properties for new Si based photonic devices. The Erbium density in those nanowires is which is very high value compared to the other Erbium doped materials. It was shown that the luminescence peaks of ECS nanowires are very sharp and stronger than their counterparts. Furthermore, both PL and XRD peaks get sharper and stronger as growth temperature increases and this shows that crystalline quality of ECS nanowires gets better with higher temperature. In the second part, I did a very detail research for growing two segment axial nanowires or radial belts and report that the structure type mostly depends on the growth temperature. Since our final step is to create white light LEDs using single axial nanowires which have three different regions grown with distinct materials and give red, green and blue colors simultaneously, we worked on growing CdS-CdSe nanowires or belts for the first step of our aim. Those products were successfully grown and they gave two luminescence peaks with maximum 160 nm wavelength separation depending on the growth conditions. It was observed that products become more likely belt once the substrate temperature increases. Also, dominance between VLS and VS is very critical to determine the shape of the products and the substitution of CdS by CdSe is very effective; hence, CdSe growth time should be chosen accordingly. However, it was shown two segmented products can be synthesized by picking the right conditions and with very careful analyses. We also demonstrated that simultaneous two colors lasing from a single segmented belt structures is possible with strong enough-pumping-power.
ContributorsTurkdogan, Sunay (Author) / Ning, Cun-Zheng (Thesis advisor) / Tao, Meng (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
The evolution of single hairpin vortices and multiple interacting hairpin vortices are studied in direct numerical simulations of channel flow at Re-tau=395. The purpose of this study is to observe the effects of increased Reynolds number and varying initial conditions on the growth of hairpins and the conditions under which single hairpins autogenerate hairpin packets. The hairpin vortices are believed to provide a unified picture of wall turbulence and play an important role in the production of Reynolds shear stress which is directly related to turbulent drag. The structures of the initial three-dimensional vortices are extracted from the two-point spatial correlation of the fully turbulent direct numerical simulation of the velocity field by linear stochastic estimation and embedded in a mean flow having the profile of the fully turbulent flow. The Reynolds number of the present simulation is more than twice that of the Re-tau=180 flow from earlier literature and the conditional events used to define the stochastically estimated single vortex initial conditions include a number of new types of events such as quasi-streamwise vorticity and Q4 events. The effects of parameters like strength, asymmetry and position are evaluated and compared with existing results in the literature. This study then attempts to answer questions concerning how vortex mergers produce larger scale structures, a process that may contribute to the growth of length scale with increasing distance from the wall in turbulent wall flows. Multiple vortex interactions are studied in detail.
ContributorsParthasarathy, Praveen Kumar (Author) / Adrian, Ronald (Thesis advisor) / Huang, Huei-Ping (Committee member) / Herrmann, Marcus (Committee member) / Arizona State University (Publisher)
Created2011
Description
Class D Amplifiers are widely used in portable systems such as mobile phones to achieve high efficiency. The demands of portable electronics for low power consumption to extend battery life and reduce heat dissipation mandate efficient, high-performance audio amplifiers. The high efficiency of Class D amplifiers (CDAs) makes them particularly attractive for portable applications. The Digital class D amplifier is an interesting solution to increase the efficiency of embedded systems. However, this solution is not good enough in terms of PWM stage linearity and power supply rejection. An efficient control is needed to correct the error sources in order to get a high fidelity sound quality in the whole audio range of frequencies. A fundamental analysis on various error sources due to non idealities in the power stage have been discussed here with key focus on Power supply perturbations driving the Power stage of a Class D Audio Amplifier. Two types of closed loop Digital Class D architecture for PSRR improvement have been proposed and modeled. Double sided uniform sampling modulation has been used. One of the architecture uses feedback around the power stage and the second architecture uses feedback into digital domain. Simulation & experimental results confirm that the closed loop PSRR & PS-IMD improve by around 30-40 dB and 25 dB respectively.
ContributorsChakraborty, Bijeta (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012
Description
The disordered nature of glass-forming melts results in two features for its dynamics i.e. non-Arrhenius and non-exponential behavior. Their macroscopic properties are studied through observing spatial heterogeneity of the molecular relaxation. Experiments performed in a low-frequency range tracks the flow of energy in time on slow degrees of freedom and transfer to the vibrational heat bath of the liquid, as is the case for microwave heating. High field measurements on supercooled liquids result in generation of fictive temperatures of the absorbing modes which eventually result in elevated true bath temperatures. The absorbed energy allows us to quantify the changes in the 'configurational', real sample, and electrode temperatures. The slow modes absorb energy on the structural relaxation time scale causing the increase of configurational temperature resulting in the rise of dielectric loss. Time-resolved high field dielectric relaxation experiments show the impact of 'configurational heating' for low frequencies of the electric field and samples that are thermally clamped to a thermostat. Relevant thermal behavior of monohydroxy alcohols is considerably different from the cases of simple non-associating liquids, due to their distinct origins of the prominent dielectric loss. Monohydroxy alcohols display very small changes due to observed nonthermal effects without increasing sample temperature. These changes have been reflected in polymers in our measurements.
ContributorsPathak, Ullas (Author) / Richert, Ranko (Thesis advisor) / Dai, Lenore (Thesis advisor) / Nielsen, David (Committee member) / Arizona State University (Publisher)
Created2012
Description
Many physical phenomena and industrial applications involve multiphase fluid flows and hence it is of high importance to be able to simulate various aspects of these flows accurately. The Dynamic Contact Angles (DCA) and the contact lines at the wall boundaries are a couple of such important aspects. In the past few decades, many mathematical models were developed for predicting the contact angles of the inter-face with the wall boundary under various flow conditions. These models are used to incorporate the physics of DCA and contact line motion in numerical simulations using various interface capturing/tracking techniques. In the current thesis, a simple approach to incorporate the static and dynamic contact angle boundary conditions using the level set method is developed and implemented in multiphase CFD codes, LIT (Level set Interface Tracking) (Herrmann (2008)) and NGA (flow solver) (Desjardins et al (2008)). Various DCA models and associated boundary conditions are reviewed. In addition, numerical aspects such as the occurrence of a stress singularity at the contact lines and grid convergence of macroscopic interface shape are dealt with in the context of the level set approach.
ContributorsPendota, Premchand (Author) / Herrmann, Marcus (Thesis advisor) / Rykaczewski, Konrad (Committee member) / Chen, Kangping (Committee member) / Arizona State University (Publisher)
Created2015
Description
In this thesis, a digital input class D audio amplifier system which has the ability
to reject the power supply noise and nonlinearly of the output stage is presented. The main digital class D feed-forward path is using the fully-digital sigma-delta PWM open loop topology. Feedback loop is used to suppress the power supply noise and harmonic distortions. The design is using global foundry 0.18um technology.
Based on simulation, the power supply rejection at 200Hz is about -49dB with
81dB dynamic range and -70dB THD+N. The full scale output power can reach as high as 27mW and still keep minimum -68dB THD+N. The system efficiency at full scale is about 82%.
to reject the power supply noise and nonlinearly of the output stage is presented. The main digital class D feed-forward path is using the fully-digital sigma-delta PWM open loop topology. Feedback loop is used to suppress the power supply noise and harmonic distortions. The design is using global foundry 0.18um technology.
Based on simulation, the power supply rejection at 200Hz is about -49dB with
81dB dynamic range and -70dB THD+N. The full scale output power can reach as high as 27mW and still keep minimum -68dB THD+N. The system efficiency at full scale is about 82%.
ContributorsBai, Jing (Author) / Bakkaloglu, Bertan (Thesis advisor) / Arizona State University (Publisher)
Created2015
Description
Self-heating degrades the performance of devices in advanced technology nodes. Understanding of self-heating effects is necessary to improve device performance. Heat generation in these devices occurs at nanometer scales but heat transfer is a microscopic phenomena. Hence a multi-scale modeling approach is required to study the self-heating effects. A state of the art Monte Carlo device simulator and the commercially available Giga 3D tool from Silvaco are used in our study to understand the self heating effects. The Monte Carlo device simulator solves the electrical transport and heat generation for nanometer length scales accurately while the Giga 3D tool solves for thermal transport over micrometer length scales. The approach used is to understand the self-heating effects in a test device structure, composed of a heater and a sensor, fabricated and characterized by IMEC. The heater is the Device Under Test(DUT) and the sensor is used as a probe. Therefore, the heater is biased in the saturation region and the sensor is biased in the sub-threshold regime. Both are planar MOSFETs of gate length equal to 22 nm. The simulated I-V characteristics of the sensor match with the experimental behavior at lower applied drain voltages but differ at higher applied biases.
The self-heating model assumes that the heat transport within the device follows Energy Balance model which may not be accurate. To properly study heat transport within the device, a state of the art Monte Carlo device simulator is necessary. In this regard, the Phonon Monte Carlo(PMC) simulator is developed. Phonons are treated as quasi particles that carry heat energy. Like electrons, phonons obey a corresponding Boltzmann Transport Equation(BTE) which can be used to study their transport. The direct solution of the BTE for phonons is possible, but it is difficult to incorporate all scattering mechanisms. In the Monte Carlo based solution method, it is easier to incorporate different relevant scattering mechanisms. Although the Monte Carlo method is computationally intensive, it provides good insight into the physical nature of the transport problem. Hence Monte Carlo based techniques are used in the present work for studying phonon transport. Monte Carlo simulations require calculating the scattering rates for different scattering processes. In the present work, scattering rates for three phonon interactions are calculated from different approaches presented in the literature. Optical phonons are also included in the transport problem. Finally, the temperature dependence of thermal conductivity for silicon is calculated in the range from 100K to 900K and is compared to available experimental data.
The self-heating model assumes that the heat transport within the device follows Energy Balance model which may not be accurate. To properly study heat transport within the device, a state of the art Monte Carlo device simulator is necessary. In this regard, the Phonon Monte Carlo(PMC) simulator is developed. Phonons are treated as quasi particles that carry heat energy. Like electrons, phonons obey a corresponding Boltzmann Transport Equation(BTE) which can be used to study their transport. The direct solution of the BTE for phonons is possible, but it is difficult to incorporate all scattering mechanisms. In the Monte Carlo based solution method, it is easier to incorporate different relevant scattering mechanisms. Although the Monte Carlo method is computationally intensive, it provides good insight into the physical nature of the transport problem. Hence Monte Carlo based techniques are used in the present work for studying phonon transport. Monte Carlo simulations require calculating the scattering rates for different scattering processes. In the present work, scattering rates for three phonon interactions are calculated from different approaches presented in the literature. Optical phonons are also included in the transport problem. Finally, the temperature dependence of thermal conductivity for silicon is calculated in the range from 100K to 900K and is compared to available experimental data.
ContributorsShaik, Abdul Rawoof (Author) / Vasileska, Dragica (Thesis advisor) / Ferry, David (Committee member) / Goodnick, Stephan (Committee member) / Arizona State University (Publisher)
Created2016