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In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25-220 ºC). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and potentially passivate N-vacancy related defects. The surface band bending and polarization charge compensation of Ga- and N-face GaN were investigated. The surface band bending and band offsets were determined for Al2O3, HfO2, and SiO2 on Ga- and N-face GaN. Different dielectric thicknesses and post deposition processing were investigated to understand process related defect formation and/or reduction.
ContributorsYang, Jialing (Author) / Nemanich, Robert J (Thesis advisor) / Chen, Tingyong (Committee member) / Peng, Xihong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2014
Description
Many species e.g. sea urchin form amorphous calcium carbonate (ACC) precursor phases that subsequently transform into crystalline CaCO3. It is certainly possible that the biogenic ACC might have more than 10 wt% Mg and ∼ 3 wt% of water. The structure of ACC and the mechanisms by which it transforms to crystalline phase are still poorly understood. In this dissertation our goal is to determine an atomic structure model that is consistent with diffraction and IR measurements of ACC. For this purpose a calcite supercell with 24 formula units, containing 120 atoms, was constructed. Various configurations with substitution of Ca by 6 Mg ions (6 wt.%) and insertion of 3-5 H2O molecules (2.25-3.75 wt.%) in the interstitial positions of the supercell, were relaxed using a robust density function code VASP. The most noticeable effects were the tilts of CO3 groups and the distortion of Ca sub-lattice, especially in the hydrated case. The distributions of Ca-Ca nearest neighbor distance and CO3 tilts were extracted from various configurations. The same methods were also applied to aragonite. Sampling from the calculated distortion distributions, we built models for amorphous calcite/aragonite of size ∼ 1700 nm3 based on a multi-scale modeling scheme. We used these models to generate diffraction patterns and profiles with our diffraction code. We found that the induced distortions were not enough to generate a diffraction profile typical of an amorphous material. We then studied the diffraction profiles from several nano-crystallites as recent studies suggest that ACC might be a random array of nanocryatallites. It was found that the generated diffraction profile from a nano-crystallite of size ∼ 2 nm3 is similar to that from the ACC.
ContributorsSinha, Sourabh (Author) / Rez, Peter (Thesis advisor) / Bearat, Hamdallah A. (Committee member) / Bennett, Peter A. (Committee member) / McCartney, Martha R. (Committee member) / Peng, Xihong (Committee member) / Arizona State University (Publisher)
Created2012
Description
A working knowledge of mathematics is a vital requirement for introductory university physics courses. However, there is mounting evidence which shows that many incoming introductory physics students do not have the necessary mathematical ability to succeed in physics. The investigation reported in this thesis used preinstruction diagnostics and interviews to examine this problem in depth. It was found that in some cases, over 75% of students could not solve the most basic mathematics problems. We asked questions involving right triangles, vector addition, vector direction, systems of equations, and arithmetic, to give a few examples. The correct response rates were typically between 25% and 75%, which is worrying, because these problems are far simpler than the typical problem encountered in an introductory quantitative physics course. This thesis uncovered a few common problem solving strategies that were not particularly effective. When solving trigonometry problems, 13% of students wrote down the mnemonic "SOH CAH TOA," but a chi-squared test revealed that this was not a statistically significant factor in getting the correct answer, and was actually detrimental in certain situations. Also, about 50% of students used a tip-to-tail method to add vectors. But there is evidence to suggest that this method is not as effective as using components. There are also a number of problem solving strategies that successful students use to solve mathematics problems. Using the components of a vector increases student success when adding vectors and examining their direction. Preliminary evidence also suggests that repetitive trigonometry practice may be the best way to improve student performance on trigonometry problems. In addition, teaching students to use a wide variety of algebraic techniques like the distributive property may help them from getting stuck when working through problems. Finally, evidence suggests that checking work could eliminate up to a third of student errors.
ContributorsJones, Matthew Isaiah (Author) / Meltzer, David (Thesis director) / Peng, Xihong (Committee member) / Department of Physics (Contributor) / School of Mathematical and Statistical Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
Description
Nanoscale semiconductors with their unique properties and potential applications have been a focus of extensive research in recent years. There are many ways in which semiconductors change the world with computers, cell phones, and solar panels, and nanoscale semiconductors having a promising potential to expand the efficiency, reduce the cost, and improve the flexibility and durability of their design. In this study, theoretical quantum mechanical simulations were performed on several different nanoscale semiconductor materials, including graphene/phosphorene nanoribbons and group III-V nanowires. First principles density functional theory (DFT) was used to study the electronic and structural properties of these nanomaterials in their fully relaxed and strained states. The electronic band gap, effective masses of charge carriers, electronic orbitals, and density of states were most commonly examined with strain, both from intrinsic and external sources. For example, armchair graphene nanoribbons (AGNR) were found to have unprecedented band gap-strain dependence. Phosphorene nanoribbons (PNRs) demonstrate a different behavior, including a chemical scissors effect, and studies revealed a strong relationship between passivation species and band gap tunability. Unlike the super mechanical flexibility of AGNRs and PNRs which can sustain incredible strain, modest yet large strain was applied to group III-V nanowires such as GaAs/InAs. The calculations showed that a direct and indirect band gap transition occurs at some critical strains and the origination of these gap transitions were explored in detail. In addition to the pure nanowires, GaAs/InAs core/shell heterostructure nanowires were also studied. Due to the lattice mismatch between GaAs and InAs, the intrinsic strain in the core/shell nanowires demonstrates an interesting behavior on tuning the electronic properties. This interesting behavior suggests a mechanical way to exert compressive strain on nanowires experimentally, and can create a finite quantum confinement effect on the core.
ContributorsCopple, Andrew (Author) / Peng, Xihong (Thesis advisor) / Chan, Candace (Committee member) / Chizmeshya, Andrew (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2016
Description
Lithium ion batteries are quintessential components of modern life. They are used to power smart devices — phones, tablets, laptops, and are rapidly becoming major elements in the automotive industry. Demand projections for lithium are skyrocketing with production struggling to keep up pace. This drive is due mostly to the rapid adoption of electric vehicles; sales of electric vehicles in 2020 are more than double what they were only a year prior. With such staggering growth it is important to understand how lithium is sourced and what that means for the environment. Will production even be capable of meeting the demand as more industries make use of this valuable element? How will the environmental impact of lithium affect growth? This thesis attempts to answer these questions as the world looks to a decade of rapid growth for lithium ion batteries.
ContributorsMelton, John (Author) / Brian, Jennifer (Thesis director) / Karwat, Darshawn (Committee member) / Chemical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
Description
Current Li-ion battery technologies are limited by the low capacities of theelectrode materials and require developments to meet stringent performance demands for
future energy storage devices. Electrode materials that alloy with Li, such as Si, are one
of the most promising alternatives for Li-ion battery anodes due to their high capacities.
Tetrel (Si, Ge, Sn) clathrates are a class of host-guest crystalline structures in which
Tetrel elements form a cage framework and encapsulate metal guest atoms. These
structures can form with defects such as framework/guest atom substitutions and
vacancies which result in a wide design space for tuning materials properties. The goal of
this work is to establish structure property relationships within the context of Li-ion
battery anode applications. The type I Ba 8 Al y Ge 46-y clathrates are investigated for their
electrochemical reactions with Li and show high capacities indicative of alloying
reactions. DFT calculations show that Li insertion into the framework vacancies is
favorable, but the migration barriers are too high for room temperature diffusion. Then,
guest free type I clathrates are investigated for their Li and Na migration barriers. The
results show that Li migration in the clathrate frameworks have low energy barriers (0.1-
0.4 eV) which suggest the possibility for room temperature diffusion. Then, the guest
free, type II Si clathrate (Na 1 Si 136 ) is synthesized and reversible Li insertion into the type
II Si clathrate structure is demonstrated. Based on the reasonable capacity (230 mAh/g),
low reaction voltage (0.30 V) and low volume expansion (0.21 %), the Si clathrate could
be a promising insertion anode for Li-ion batteries. Next, synchrotron X-ray
measurements and pair distribution function (PDF) analysis are used to investigate the
lithiation pathways of Ba 8 Ge 43 , Ba 8 Al 16 Ge 30 , Ba 8 Ga 15 Sn 31 and Na 0.3 Si 136 . The results
show that the Ba-clathrates undergo amorphous phase transformations which is distinct
from their elemental analogues (Ge, Sn) which feature crystalline lithiation pathways.
Based on the high capacities and solid-solution reaction mechanism, guest-filled
clathrates could be promising precursors to form alloying anodes with novel
electrochemical properties. Finally, several high temperature (300-550 °C)
electrochemical synthesis methods for Na-Si and Na-Ge clathrates are demonstrated in a
cell using a Na β’’-alumina solid electrolyte.
ContributorsDopilka, Andrew (Author) / Chan, Candace K (Thesis advisor) / Zhuang, Houlong (Committee member) / Peng, Xihong (Committee member) / Sieradzki, Karl (Committee member) / Arizona State University (Publisher)
Created2021