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Description
A novel Monte Carlo rejection technique for solving the phonon and electron

Boltzmann Transport Equation (BTE), including full many-particle interactions, is

presented in this work. This technique has been developed to explicitly model

population-dependent scattering within the full-band Cellular Monte Carlo (CMC)

framework to simulate electro-thermal transport in semiconductors, while ensuring

the conservation of energy

A novel Monte Carlo rejection technique for solving the phonon and electron

Boltzmann Transport Equation (BTE), including full many-particle interactions, is

presented in this work. This technique has been developed to explicitly model

population-dependent scattering within the full-band Cellular Monte Carlo (CMC)

framework to simulate electro-thermal transport in semiconductors, while ensuring

the conservation of energy and momentum for each scattering event. The scattering

algorithm directly solves the many-body problem accounting for the instantaneous

distribution of the phonons. The general approach presented is capable of simulating

any non-equilibrium phase-space distribution of phonons using the full phonon dispersion

without the need of the approximations commonly used in previous Monte Carlo

simulations. In particular, anharmonic interactions require no assumptions regarding

the dominant modes responsible for anharmonic decay, while Normal and Umklapp

scattering are treated on the same footing.

This work discusses details of the algorithmic implementation of the three particle

scattering for the treatment of the anharmonic interactions between phonons, as well

as treating isotope and impurity scattering within the same framework. The approach

is then extended with a technique based on the multivariable Hawkes point process

that has been developed to model the emission and the absorption process of phonons

by electrons.

The simulation code was validated by comparison with both analytical, numerical,

and experimental results; in particular, simulation results show close agreement with

a wide range of experimental data such as the thermal conductivity as function of the

isotopic composition, the temperature and the thin-film thickness.
ContributorsSabatti, Flavio Francesco Maria (Author) / Saraniti, Marco (Thesis advisor) / Smith, David J. (Committee member) / Wang, Robert (Committee member) / Goodnick, Stephen M (Committee member) / Arizona State University (Publisher)
Created2018
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Description
With the high demand for faster and smaller wireless communication devices, manufacturers have been pushed to explore new materials for smaller and faster transistors. One promising class of transistors is high electron mobility transistors (HEMT). AlGaAs/GaAs HEMTs have been shown to perform well at high power and high frequencies.

With the high demand for faster and smaller wireless communication devices, manufacturers have been pushed to explore new materials for smaller and faster transistors. One promising class of transistors is high electron mobility transistors (HEMT). AlGaAs/GaAs HEMTs have been shown to perform well at high power and high frequencies. However, AlGaN/GaN HEMTs have been gaining more attention recently due to their comparatively higher power densities and better high frequency performance. Nevertheless, these devices have experienced truncated lifetimes. It is assumed that reducing defect densities in these materials will enable a more direct study of the failure mechanisms in these devices. In this work we present studies done to reduce interfacial oxygen at N-polar GaN/GaN interfaces, growth conditions for InAlN barrier layer, and microanalysis of a partial InAlN-based HEMT. Additionally, the depth of oxidation of an InAlN layer on a gate-less InAlN/GaN metal oxide semiconductor HEMT (MOSHEMT) was investigated. Measurements of electric fields in AlGaN/GaN HEMTs with and without field plates are also presented.
ContributorsMcConkie, Thomas O. (Author) / Smith, David J. (Thesis advisor) / McCartney, Martha (Committee member) / Ponce, Fernando A. (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Compound semiconductors tend to be more ionic if the cations and anions are further apart in atomic columns, such as II-VI compared to III-V compounds, due in part to the greater electronegativity difference between group-II and group-VI atoms. As the electronegativity between the atoms increases, the materials tend to have

Compound semiconductors tend to be more ionic if the cations and anions are further apart in atomic columns, such as II-VI compared to III-V compounds, due in part to the greater electronegativity difference between group-II and group-VI atoms. As the electronegativity between the atoms increases, the materials tend to have more insulator-like properties, including higher energy band gaps and lower indices of refraction. This enables significant differences in the optical and electronic properties between III-V, II-VI, and IV-VI semiconductors. Many of these binary compounds have similar lattice constants and therefore can be grown epitaxially on top of each other to create monolithic heterovalent and heterocrystalline heterostructures with optical and electronic properties unachievable in conventional isovalent heterostructures.

Due to the difference in vapor pressures and ideal growth temperatures between the different materials, precise growth methods are required to optimize the structural and optical properties of the heterovalent heterostructures. The high growth temperatures of the III-V materials can damage the II-VI barrier layers, and therefore a compromise must be found for the growth of high-quality III-V and II-VI layers in the same heterostructure. In addition, precise control of the interface termination has been shown to play a significant role in the crystal quality of the different layers in the structure. For non-polar orientations, elemental fluxes of group-II and group-V atoms consistently help to lower the stacking fault and dislocation density in the II-VI/III-V heterovalent heterostructures.

This dissertation examines the epitaxial growth of heterovalent and heterocrystalline heterostructures lattice-matched to GaAs, GaSb, and InSb substrates in a single-chamber growth system. The optimal growth conditions to achieve alternating layers of III-V, II-VI, and IV-VI semiconductors have been investigated using temperature ramps, migration-enhanced epitaxy, and elemental fluxes at the interface. GaSb/ZnTe distributed Bragg reflectors grown in this study significantly outperform similar isovalent GaSb-based reflectors and show great promise for mid-infrared applications. Also, carrier confinement in GaAs/ZnSe quantum wells was achieved with a low-temperature growth technique for GaAs on ZnSe. Additionally, nearly lattice-matched heterocrystalline PbTe/CdTe/InSb heterostructures with strong infrared photoluminescence were demonstrated, along with virtual (211) CdZnTe/InSb substrates with extremely low defect densities for long-wavelength optoelectronic applications.
ContributorsLassise, Maxwell Brock (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David J. (Committee member) / Johnson, Shane R (Committee member) / Mccartney, Martha R (Committee member) / Arizona State University (Publisher)
Created2019
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Description
InAs/InAsSb type-II superlattices (T2SLs) can be considered as potential alternatives for conventional HgCdTe photodetectors due to improved uniformity, lower manufacturing costs with larger substrates, and possibly better device performance. This dissertation presents a comprehensive study on the structural, optical and electrical properties of InAs/InAsSb T2SLs grown by Molecular Beam Epitaxy.

InAs/InAsSb type-II superlattices (T2SLs) can be considered as potential alternatives for conventional HgCdTe photodetectors due to improved uniformity, lower manufacturing costs with larger substrates, and possibly better device performance. This dissertation presents a comprehensive study on the structural, optical and electrical properties of InAs/InAsSb T2SLs grown by Molecular Beam Epitaxy.

The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.

After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including etch-pit-density (EPD) measurements, cathodoluminescence (CL) imaging and X-ray topography (XRT), were explored, in attempting to gain better knowledge of the sparsely distributed defects. EPD revealed the distribution of dislocation-associated pits across the wafer. Unfortunately, the lack of contrast in images obtained by CL imaging and XRT indicated their inability to provide any quantitative information about defect density in these InAs/InAsSb T2SLs.

The nBn photodetectors based on mid-wave infrared (MWIR) and long-wave infrared (LWIR) InAs/InAsSb T2SLs were fabricated. The significant difference in Ga composition in the barrier layer coupled with different dark current behavior, suggested the possibility of different types of band alignment between the barrier layers and the absorbers. A positive charge density of 1.8 × 1017/cm3 in the barrier of MWIR nBn photodetector, as determined by electron holography, confirmed the presence of a potential well in its valence band, thus identifying type-II alignment. In contrast, the LWIR nBn photodetector was shown to have type-I alignment because no sign of positive charge was detected in its barrier.

Capacitance-voltage measurements were performed to investigate the temperature dependence of carrier densities in a metal-oxide-semiconductor (MOS) structure based on MWIR InAs/InAsSb T2SLs, and a nBn structure based on LWIR InAs/InAsSb T2SLs. No carrier freeze-out was observed in either sample, indicating very shallow donor levels. The decrease in carrier density when temperature increased was attributed to the increased density of holes that had been thermally excited from localized states near the oxide/semiconductor interface in the MOS sample. No deep-level traps were revealed in deep-level transient spectroscopy temperature scans.
ContributorsShen, Xiaomeng (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David J. (Thesis advisor) / Alford, Terry (Committee member) / Goryll, Michael (Committee member) / Mccartney, Martha R (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Wide bandgap semiconductors are of much current interest due to their superior electrical properties. This dissertation describes electron microscopy characterization of GaN-on-GaN structures for high-power vertical device applications. Unintentionally-doped (UID) GaN layers grown homoepitaxially via metal-organic chemical vapor deposition on freestanding GaN substrates, were subjected to dry etching, and layers

Wide bandgap semiconductors are of much current interest due to their superior electrical properties. This dissertation describes electron microscopy characterization of GaN-on-GaN structures for high-power vertical device applications. Unintentionally-doped (UID) GaN layers grown homoepitaxially via metal-organic chemical vapor deposition on freestanding GaN substrates, were subjected to dry etching, and layers of UID-GaN/p-GaN were over-grown. The as-grown and regrown heterostructures were examined in cross-section using transmission electron microscopy (TEM). Two different etching treatments, fast-etch-only and multiple etches with decreasing power, were employed. The fast-etch-only devices showed GaN-on-GaN interface at etched location, and low device breakdown voltages were measured (~ 45-95V). In comparison, no interfaces were visible after multiple etching steps, and the corresponding breakdown voltages were much higher (~1200-1270V). These results emphasized importance of optimizing surface etching techniques for avoiding degraded device performance. The morphology of GaN-on-GaN devices after reverse-bias electrical stressing to breakdown was investigated. All failed devices had irreversible structural damage, showing large surface craters (~15-35 microns deep) with lengthy surface cracks. Cross-sectional TEM of failed devices showed high densities of threading dislocations (TDs) around the cracks and near crater surfaces. Progressive ion-milling across damaged devices revealed high densities of TDs and the presence of voids beneath cracks: these features were not observed in unstressed devices. The morphology of GaN substrates grown by hydride vapor-phase epitaxy (HVPE) and by ammonothermal methods were correlated with reverse-bias results. HVPE substrates showed arrays of surface features when observed by X-ray topography (XRT). All fabricated devices that overlapped with these features had typical reverse-bias voltages less than 100V at a leakage current limit of 10-6 A. In contrast, devices not overlapping with such features reached voltages greater than 300V. After etching, HVPE substrate surfaces showed defect clusters and macro-pits, whereas XRT images of ammonothermal substrate revealed no visible features. However, some devices fabricated on ammonothermal substrate failed at low voltages. Devices on HVPE and ammonothermal substrates with low breakdown voltages showed crater-like surface damage and revealed TDs (~25µm deep) and voids; such features were not observed in devices reaching higher voltages. These results should assist in developing protocols to fabricate reliable high-voltage devices.
ContributorsPeri, Prudhvi Ram (Author) / Smith, David J. (Thesis advisor) / Alford, Terry (Committee member) / Mccartney, Martha R (Committee member) / Nemanich, Robert (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2021
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Description
This work investigates the impact of wavelength-selective light trapping on photovoltaic efficiency and operating temperature, with a focus on GaAs and Si devices. A nanostructure array is designed to optimize the efficiency of a III-V narrow-band photonic power converter (PPC). Within finite-difference time-domain (FDTD) simulations, a nanotextured GaInP window layer

This work investigates the impact of wavelength-selective light trapping on photovoltaic efficiency and operating temperature, with a focus on GaAs and Si devices. A nanostructure array is designed to optimize the efficiency of a III-V narrow-band photonic power converter (PPC). Within finite-difference time-domain (FDTD) simulations, a nanotextured GaInP window layer yields a 25× path-length enhancement when integrated with a rear dielectric-metal reflector. Then, nanotexturing of GaInP is experimentally achieved with electron-beam lithography (EBL) and Cl2/Ar plasma etching. Time-resolved photoluminescence (TRPL) measurements show that the GaAs absorber lifetime does not drop due to the nanotexturing process, thus indicating a path to thinner, higher-efficiency PPCs. Next, wavelength-selective light management is examined for enhanced radiative cooling. It is shown that wavelength-selective optimizations of a module’s emissivity can yield 60-65% greater radiative cooling benefits compared to comparative changes across a broader wavelength range. State-of-the-art Si modules that utilize microtextured cover glass are shown to already achieve 99% of the radiative cooling gains that are possible for a photovoltaic device under full sunlight. In contrast, the sub-bandgap reflection (SBR) of Si modules is shown to be far below ideal. The low SBR of modules with textured Si cells (15%-26%) is shown to be the primary reason for their higher operating temperatures than modules with planar GaAs cells (SBR measured at 77%). For textured cells, typical of Si modules, light trapping amplifies parasitic absorption in the encapsulant and the rear mirror, yielding greater heat generation. Optimization of doping and the rear mirror of a Si module could increase the SBR to a maximum of 63%, with further increases available only if parasitic absorption in the encapsulation materials can be reduced. For thin films, increased heat generation may outweigh the photogeneration benefits that are possible with light trapping. These investigations motivate a wavelength-selective application of light trapping: light trapping for near- to above-bandgap photons to increase photogeneration; and out-coupling of light in mid- to far-infrared wavelengths to increase the emission of thermal radiation; but light trapping should ideally be avoided at sub-bandgap energies where there is substantial solar radiation to limit heat generation and material degradation.
ContributorsIrvin, Nicholas P. (Author) / Honsberg, Christiana B. (Thesis advisor) / King, Richard R. (Thesis advisor) / Nemanich, Robert J. (Committee member) / Smith, David J. (Committee member) / Arizona State University (Publisher)
Created2023