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Description
The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs)

The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies. The MESFETs presented in this thesis have been fabricated on different SOI-CMOS processes without making any change to the standard fabrication steps and offer 2-30 times higher breakdown voltage than the MOSFETs on the same process. This thesis explains the design steps of high efficiency and wideband RF transmitters using the proposed SOI-CMOS compatible MESFETs. This task involves DC and RF characterization of MESFET devices, along with providing a compact Spice model for simulation purposes. This thesis presents the design of several SOI-MESFET RF power amplifiers operating at 433, 900 and 1800 MHz with ~40% bandwidth. Measurement results show a peak power added efficiency (PAE) of 55% and a peak output power of 22.5 dBm. The RF-PAs were designed to operate in Class-AB mode to minimize the linearity degradation. Class-AB power amplifiers lead to poor power added efficiency, especially when fed with signals with high peak to average power ratio (PAPR) such as wideband code division multiple access (W-CDMA). Polar transmitters have been introduced to improve the efficiency of RF-PAs at backed-off powers. A MESFET based envelope tracking (ET) polar transmitter was designed and measured. A low drop-out voltage regulator (LDO) was used as the supply modulator of this polar transmitter. MESFETs are depletion mode devices; therefore, they can be configured in a source follower configuration to have better stability and higher bandwidth that MOSFET based LDOs. Measurement results show 350 MHz bandwidth while driving a 10 pF capacitive load. A novel polar transmitter is introduced in this thesis to alleviate some of the limitations associated with polar transmitters. The proposed architecture uses the backgate terminal of a partially depleted transistor on SOI process, which relaxes the bandwidth and efficiency requirements of the envelope amplifier in a polar transmitter. The measurement results of the proposed transmitter demonstrate more than three times PAE improvement at 6-dB backed-off output power, compared to the traditional RF transmitters.
ContributorsGhajar, Mohammad Reza (Author) / Thornton, Trevor (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Class D Amplifiers are widely used in portable systems such as mobile phones to achieve high efficiency. The demands of portable electronics for low power consumption to extend battery life and reduce heat dissipation mandate efficient, high-performance audio amplifiers. The high efficiency of Class D amplifiers (CDAs) makes them particularly

Class D Amplifiers are widely used in portable systems such as mobile phones to achieve high efficiency. The demands of portable electronics for low power consumption to extend battery life and reduce heat dissipation mandate efficient, high-performance audio amplifiers. The high efficiency of Class D amplifiers (CDAs) makes them particularly attractive for portable applications. The Digital class D amplifier is an interesting solution to increase the efficiency of embedded systems. However, this solution is not good enough in terms of PWM stage linearity and power supply rejection. An efficient control is needed to correct the error sources in order to get a high fidelity sound quality in the whole audio range of frequencies. A fundamental analysis on various error sources due to non idealities in the power stage have been discussed here with key focus on Power supply perturbations driving the Power stage of a Class D Audio Amplifier. Two types of closed loop Digital Class D architecture for PSRR improvement have been proposed and modeled. Double sided uniform sampling modulation has been used. One of the architecture uses feedback around the power stage and the second architecture uses feedback into digital domain. Simulation & experimental results confirm that the closed loop PSRR & PS-IMD improve by around 30-40 dB and 25 dB respectively.
ContributorsChakraborty, Bijeta (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Semiconductor device scaling has kept up with Moore's law for the past decades and they have been scaling by a factor of half every one and half years. Every new generation of device technology opens up new opportunities and challenges and especially so for analog design. High speed and low

Semiconductor device scaling has kept up with Moore's law for the past decades and they have been scaling by a factor of half every one and half years. Every new generation of device technology opens up new opportunities and challenges and especially so for analog design. High speed and low gain is characteristic of these processes and hence a tradeoff that can enable to get back gain by trading speed is crucial. This thesis proposes a solution that increases the speed of sampling of a circuit by a factor of three while reducing the specifications on analog blocks and keeping the power nearly constant. The techniques are based on the switched capacitor technique called Correlated Level Shifting. A triple channel Cyclic ADC has been implemented, with each channel working at a sampling frequency of 3.33MS/s and a resolution of 14 bits. The specifications are compared with that based on a traditional architecture to show the superiority of the proposed technique.
ContributorsSivakumar, Balasubramanian (Author) / Farahani, Bahar Jalali (Thesis advisor) / Garrity, Douglas (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Multiport antennas offer greater design flexibility than traditional one-port designs. An antenna array is a special case of a multiport antenna. If the antenna's inter-element spacing is electrically small, the antenna is capable of achieving superdirectivity. Superdirective antenna arrays are known to be narrow band and have low radiation resistance

Multiport antennas offer greater design flexibility than traditional one-port designs. An antenna array is a special case of a multiport antenna. If the antenna's inter-element spacing is electrically small, the antenna is capable of achieving superdirectivity. Superdirective antenna arrays are known to be narrow band and have low radiation resistance which leads to low radiation efficiency and high VSWR. However, by increasing the self-impedance of the antenna elements, the radiation resistance is increased but the bandwidth remains narrow. A design methodology is developed using the ability to superimpose electric fields and multi-objective optimization to design antenna feed networks. While the emphasis in this dissertation is on antenna arrays and superdirectivity, the design methodology is general and can be applied to other multiport antennas. The design methodology is used to design a multiport impedance-matching network and optimize both the input impedance and radiation pattern of a two-port superdirective antenna array. It is shown that the multiport impedance-matching network is capable of improving the input impedance of the antenna array while maintaining high directionality. The antenna design is critical for the methodology to improve the bandwidth and radiation characteristics of the array. To double the bandwidth of the two-port impedance matched superdirective antenna array, a three-port Yagi-Uda antenna design is demonstrated. The addition of the extra antenna element does not increase the footprint of the antenna array. The design methodology is then used to design a symmetrical antenna array capable of steering its main beam in two directions.
ContributorsArceo, Diana (Author) / Balanis, Constantine A (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Moeller, Karl (Committee member) / Palais, Joseph (Committee member) / Arizona State University (Publisher)
Created2012
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Description
High-Resistivity Silicon (HRS) substrates are important for low-loss, high-performance microwave and millimeter wave devices in high-frequency telecommunication systems. The highest resistivity of up to ~10,000 ohm.cm is Float Zone (FZ) grown Si which is produced in small quantities and moderate wafer diameter. The more common Czochralski (CZ) Si can achieve

High-Resistivity Silicon (HRS) substrates are important for low-loss, high-performance microwave and millimeter wave devices in high-frequency telecommunication systems. The highest resistivity of up to ~10,000 ohm.cm is Float Zone (FZ) grown Si which is produced in small quantities and moderate wafer diameter. The more common Czochralski (CZ) Si can achieve resistivities of around 1000 ohm.cm, but the wafers contain oxygen that can lead to thermal donor formation with donor concentration significantly higher (~1015 cm-3) than the dopant concentration (~1012-1013 cm-3) of such high-resistivity Si leading to resistivity changes and possible type conversion of high-resistivity p-type silicon. In this research capacitance-voltage (C-V) characterization is employed to study the donor formation and type conversion of p-type High-resistivity Silicon-On-Insulator (HRSOI) wafers and the challenges involved in C-V characterization of HRSOI wafers using a Schottky contact are highlighted. The maximum capacitance of bulk or Silicon-On-Insulator (SOI) wafers is governed by the gate/contact area. During C-V characterization of high-resistivity SOI wafers with aluminum contacts directly on the Si film (Schottky contact); it was observed that the maximum capacitance is much higher than that due to the contact area, suggesting bias spreading due to the distributed transmission line of the film resistance and the buried oxide capacitance. In addition, an "S"-shape C-V plot was observed in the accumulation region. The effects of various factors, such as: frequency, contact and substrate sizes, gate oxide, SOI film thickness, film and substrate doping, carrier lifetime, contact work-function, temperature, light, annealing temperature and radiation on the C-V characteristics of HRSOI wafers are studied. HRSOI wafers have the best crosstalk prevention capability compared to other types of wafers, which plays a major role in system-on-chip configuration to prevent coupling between high frequency digital and sensitive analog circuits. Substrate crosstalk in HRSOI and various factors affecting the crosstalk, such as: substrate resistivity, separation between devices, buried oxide (BOX) thickness, radiation, temperature, annealing, light, and device types are discussed. Also various ways to minimize substrate crosstalk are studied and a new characterization method is proposed. Owing to their very low doping concentrations and the presence of oxygen in CZ wafers, HRS wafers pose a challenge in resistivity measurement using conventional techniques such as four-point probe and Hall measurement methods. In this research the challenges in accurate resistivity measurement using four-point probe, Hall method, and C-V profile are highlighted and a novel approach to extract resistivity of HRS wafers based on Impedance Spectroscopy measurements using polymer dielectrics such as Polystyrene and Poly Methyl Methacrylate (PMMA) is proposed.
ContributorsNayak, Pinakpani (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Kozicki, Michael (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2012
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ContributorsJavidahmadabadi, Mahdi (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2015
Description
ABSTRACT

Designers creating the next generation remote sensing enabled smart devices need to overcome the challenges of prevailing ventures including time to market and expense.

To reduce the time and effort involved in initial prototyping, a good reference design is often desired and warranted. This paper provides the necessary reference materials

ABSTRACT

Designers creating the next generation remote sensing enabled smart devices need to overcome the challenges of prevailing ventures including time to market and expense.

To reduce the time and effort involved in initial prototyping, a good reference design is often desired and warranted. This paper provides the necessary reference materials for Designers to implement a wireless solution efficiently and effectively.

This document is intended for users with limited Bluetooth technology experience.

Many sensing-enabled devices require a ‘hard-wire’ or cable link to a host monitoring system. This can limit the potential for product advancements by anchoring the system to a single location preventing portability and the convenience of a remote system. By removing the “wired” or cabled portion from a design, a broader scope of devices becomes feasible.

One common problematic area for these types of sensors is within the internal medicine field. Proximity sensing is far more practical and less invasive to implement than surgical implantation. Bluetooth Low Energy (BLE) systems solve the hard wired problem by decoupling the physical sensor from the host system through a BLE transceiver that can send information to an external monitoring system. This wireless link enables new sensor technology to be leveraged into previously unobtainable markets; such as, internal medicine, wearable devices, and Infotainment to name a few. Wireless technology for sensor systems are a potentially disruptive technology changing the way environmental monitoring is implemented and considered.

With this BLE design reference, products can be created with new capabilities to advance current technologies for military, commercial, industrial and medical sectors in rapid succession.
ContributorsHughes, Clinton Francis (Author) / Blain Christen, Jennifer (Thesis advisor) / Ozev, Sule (Committee member) / Ogras, Umit Y. (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2015
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Description
A 4-phase, quasi-current-mode hysteretic buck converter with digital frequency synchronization, online comparator offset-calibration and digital current sharing control is presented. The switching frequency of the hysteretic converter is digitally synchronized to the input clock reference with less than ±1.5% error in the switching frequency range of 3-9.5MHz. The online offset

A 4-phase, quasi-current-mode hysteretic buck converter with digital frequency synchronization, online comparator offset-calibration and digital current sharing control is presented. The switching frequency of the hysteretic converter is digitally synchronized to the input clock reference with less than ±1.5% error in the switching frequency range of 3-9.5MHz. The online offset calibration cancels the input-referred offset of the hysteretic comparator and enables ±1.1% voltage regulation accuracy. Maximum current-sharing error of ±3.6% is achieved by a duty-cycle-calibrated delay line based PWM generator, without affecting the phase synchronization timing sequence. In light load conditions, individual converter phases can be disabled, and the final stage power converter output stage is segmented for high efficiency. The DC-DC converter achieves 93% peak efficiency for Vi = 2V and Vo = 1.6V.
ContributorsSun, Ming (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Seo, Jae-Sun (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2017
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Description
The objective of this work is to design a low-profile compact Terahertz (THz) imaging system that can be installed in portable devices, unmanned aerial vehicles (UAVs), or CubeSats. Taking advantage of the rotational motion of these platforms, one can use linear antennas, such as leaky-wave antennas or linear phased arrays,

The objective of this work is to design a low-profile compact Terahertz (THz) imaging system that can be installed in portable devices, unmanned aerial vehicles (UAVs), or CubeSats. Taking advantage of the rotational motion of these platforms, one can use linear antennas, such as leaky-wave antennas or linear phased arrays, to achieve fast image acquisition using simple RF front-end topologies. The proposed system relies on a novel image reconstructing technique that uses the principles of computerized tomography (Fourier-slice theorem). It can be implemented using a rotating antenna that produces a highly astigmatic fan-beam. In this work, the imaging system is composed of a linear phased antenna array with a highly directive beam pattern in the E-plane allowing for high spatial resolution imaging. However, the pattern is almost omnidirectional in the H-plane and extends beyond the required field-of-view (FOV). This is a major drawback as the scattered signals from any interferer outside the FOV will still be received by the imaging aperture and cause distortion in the reconstructed image. Also, fan beams exhibit significant distortion (curvature) when tilted at large angles, thus introducing errors in the final image due to its failure to achieve the assumed reconstructing algorithm.

Therefore, a new design is proposed to alleviate these disadvantages. A 14×64 elements non-uniform array with an optimal flat-top pattern is designed with an iterative process using linear perturbation of a close starting pattern until the desired pattern is acquired. The principal advantage of this design is that it restricts the radiated/received power into the required FOV. As a result, a significant enhancement in the quality of images is achieved especially in the mitigation of the effect of any interferer outside the FOV. In this report, these two designs are presented and compared in terms of their imaging efficiency along with a series of numerical results verifying the proof of concept.
ContributorsSakr, Mahmoud (Author) / Trichopoulos, Georgios (Thesis advisor) / Balanis, Constantine (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2018
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Description
The universe since its formation 13.7 billion years ago has undergone many changes. It began with expanding and cooling down to a temperature low enough for formation of atoms of neutral Hydrogen and Helium gas. Stronger gravitational pull in certain regions caused some regions to be denser and hotter than

The universe since its formation 13.7 billion years ago has undergone many changes. It began with expanding and cooling down to a temperature low enough for formation of atoms of neutral Hydrogen and Helium gas. Stronger gravitational pull in certain regions caused some regions to be denser and hotter than others. These regions kept getting denser and hotter until they had centers hot enough to burn the hydrogen and form the first stars, which ended the Dark Ages. These stars did not live long and underwent violent explosions. These explosions and the photons from the stars caused the hydrogen gas around them to ionize. This went on until all the hydrogen gas in the universe was ionized. This period is known as Epoch Of Reionization. Studying the Epoch Of Reionization will help understand the formation of these early stars, the timeline of the reionization and the formation of the stars and galaxies as we know them today. Studying the radiations from the 21cm line in neutral hydrogen, redshifted to below 200MHz can help determine details such as velocity, density and temperature of these early stars and the media around them.

The EDGES program is one of the many programs that aim to study the Epoch of Reionization. It is a ground-based project deployed in Murchison Radio-Astronomy Observatory in Western Australia. At ground level the Radio Frequency Interference from the ionosphere and various man-made transmitters in the same frequency range as the EDGES receiver make measurements, receiver design and extraction of useful data from received signals difficult. Putting the receiver in space can help majorly escape the RFI. The EDGES In Space is a proposed project that aims at designing a receiver similar to the EDGES receiver but for a cubesat.

This thesis aims at designing a prototype receiver that is similar in architecture to the EDGES low band receiver (50-100MHz) but is significantly smaller in size (small enough to fit on a PCB for a cubesat) while keeping in mind different considerations that affect circuit performance in space.
ContributorsJambagi, Ashwini (Author) / Mauskopf, Philip (Thesis advisor) / Aberle, James T., 1961- (Thesis advisor) / Trichopoulos, Georgios (Committee member) / Arizona State University (Publisher)
Created2019