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Development of models for optical instrument transformers

Description

Optical Instrument Transformers (OIT) have been developed as an alternative to traditional instrument transformers (IT). The question "Can optical instrument transformers substitute for the traditional transformers?" is the main motivation of this study. Finding the answer for this question and

Optical Instrument Transformers (OIT) have been developed as an alternative to traditional instrument transformers (IT). The question "Can optical instrument transformers substitute for the traditional transformers?" is the main motivation of this study. Finding the answer for this question and developing complete models are the contributions of this work. Dedicated test facilities are developed so that the steady state and transient performances of analog outputs of a magnetic current transformer (CT) and a magnetic voltage transformer (VT) are compared with that of an optical current transformer (OCT) and an optical voltage transformer (OVT) respectively. Frequency response characteristics of OIT outputs are obtained. Comparison results show that OITs have a specified accuracy of 0.3% in all cases. They are linear, and DC offset does not saturate the systems. The OIT output signal has a 40~60 μs time delay, but this is typically less than the equivalent phase difference permitted by the IEEE and IEC standards for protection applications. Analog outputs have significantly higher bandwidths (adjustable to 20 to 40 kHz) than the IT. The digital output signal bandwidth (2.4 kHz) of an OCT is significantly lower than the analog signal bandwidth (20 kHz) due to the sampling rates involved. The OIT analog outputs may have significant white noise of 6%, but the white noise does not affect accuracy or protection performance. Temperatures up to 50oC do not adversely affect the performance of the OITs. Three types of models are developed for analog outputs: analog, digital, and complete models. Well-known mathematical methods, such as network synthesis and Jones calculus methods are applied. The developed models are compared with experiment results and are verified with simulation programs. Results show less than 1.5% for OCT and 2% for OVT difference and that the developed models can be used for power system simulations and the method used for the development can be used to develop models for all other brands of optical systems. The communication and data transfer between the all-digital protection systems is investigated by developing a test facility for all digital protection systems. Test results show that different manufacturers' relays and transformers based on the IEC standard can serve the power system successfully.

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Date Created
2010

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HTLS upgrades for power transmission expansion planning and operation

Description

Renewable portfolio standards prescribe for penetration of high amounts of re-newable energy sources (RES) that may change the structure of existing power systems. The load growth and changes in power flow caused by RES integration may result in re-quirements of

Renewable portfolio standards prescribe for penetration of high amounts of re-newable energy sources (RES) that may change the structure of existing power systems. The load growth and changes in power flow caused by RES integration may result in re-quirements of new available transmission capabilities and upgrades of existing transmis-sion paths. Construction difficulties of new transmission lines can become a problem in certain locations. The increase of transmission line thermal ratings by reconductoring using High Temperature Low Sag (HTLS) conductors is a comparatively new technology introduced to transmission expansion. A special design permits HTLS conductors to operate at high temperatures (e.g., 200oC), thereby allowing passage of higher current. The higher temperature capability increases the steady state and emergency thermal ratings of the transmission line. The main disadvantage of HTLS technology is high cost. The high cost may place special emphasis on a thorough analysis of cost to benefit of HTLS technology im-plementation. Increased transmission losses in HTLS conductors due to higher current may be a disadvantage that can reduce the attractiveness of this method. Studies described in this thesis evaluate the expenditures for transmission line re-conductoring using HTLS and the consequent benefits obtained from the potential decrease in operating cost for thermally limited transmission systems. Studies performed consider the load growth and penetration of distributed renewable energy sources according to the renewable portfolio standards for power systems. An evaluation of payback period is suggested to assess the cost to benefit ratio of HTLS upgrades. The thesis also considers the probabilistic nature of transmission upgrades. The well-known Chebyshev inequality is discussed with an application to transmission up-grades. The Chebyshev inequality is proposed to calculate minimum payback period ob-tained from the upgrades of certain transmission lines. The cost to benefit evaluation of HTLS upgrades is performed using a 225 bus equivalent of the 2012 summer peak Arizona portion of the Western Electricity Coordi-nating Council (WECC).

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Date Created
2014

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Influence of grounded back electrode on AC creepage breakdown characteristics

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This thesis focuses on the influence of a grounded back electrode on the breakdown characteristics. The back electrode is an electrode which attaches at the back side of solid insulation. Insulation with grounded back electrode is a common type of

This thesis focuses on the influence of a grounded back electrode on the breakdown characteristics. The back electrode is an electrode which attaches at the back side of solid insulation. Insulation with grounded back electrode is a common type of insulation which is adopted in many high voltage power devices. While most of the power equipment work under AC voltage, most of the research on back electrode is focused on the DC voltage. Therefore, it is necessary to deeply investigate the influence of the back electrode under AC applied voltage. To investigate the influence of back electrode, the research is separated into two phases, which are the experiment phase and the electric field analysis phase. In the experiments, the breakdown voltages for both with and without back electrode are obtained. The experimental results indicate that the grounded back electrode does have impact on the breakdown characteristics. Then with the breakdown voltage, based on real experiment model, the electric field is analyzed using computer software. From the field simulation result, it is found that the back electrode also influences the electric field distribution. The inter relationship between the electric field and breakdown voltage is the key to explain all the results and phenomena observed during the experiment. Additionally, the influence of insulation barrier on breakdown is also investigated. Compared to the case without ground electrode, inserting a barrier into the gap can more significantly improve breakdown voltage.

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Date Created
2014

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Thermal performance of 69 kV underground cables

Description

Underground cables have been widely used in big cities. This is because underground cables offer the benefits of reducing visual impact and the disturbance caused by bad weather (wind, ice, snow, and the lightning strikes). Additionally, when placing power lines

Underground cables have been widely used in big cities. This is because underground cables offer the benefits of reducing visual impact and the disturbance caused by bad weather (wind, ice, snow, and the lightning strikes). Additionally, when placing power lines underground, the maintenance costs can also be reduced as a result. The underground cable rating calculation is the most critical part of designing the cable construction and cable installation. In this thesis, three contributions regarding the cable ampacity study have been made. First, an analytical method for rating of underground cables has been presented. Second, this research also develops the steady state and transient ratings for Salt River Project (SRP) 69 kV underground system using the commercial software CYMCAP for several typical substations. Third, to find an alternative way to predict the cable ratings, three regression models have been built. The residual plot and mean square error for the three methods have been analyzed. The conclusion is dawn that the nonlinear regression model provides the sufficient accuracy of the cable rating prediction for SRP's typical installation.

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Date Created
2013

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One-dimensional fast transient simulator for modeling CdS/CdTe solar cells

Description

Solar energy, including solar heating, solar architecture, solar thermal electricity and solar photovoltaics, is one of the primary energy sources replacing fossil fuels. Being one of the most important techniques, significant research has been conducted in solar cell efficiency improvement.

Solar energy, including solar heating, solar architecture, solar thermal electricity and solar photovoltaics, is one of the primary energy sources replacing fossil fuels. Being one of the most important techniques, significant research has been conducted in solar cell efficiency improvement. Simulation of various structures and materials of solar cells provides a deeper understanding of device operation and ways to improve their efficiency. Over the last two decades, polycrystalline thin-film Cadmium-Sulfide and Cadmium-Telluride (CdS/CdTe) solar cells fabricated on glass substrates have been considered as one of the most promising candidate in the photovoltaic technologies, for their similar efficiency and low costs when compared to traditional silicon-based solar cells. In this work a fast one dimensional time-dependent/steady-state drift-diffusion simulator, accelerated by adaptive non-uniform mesh and automatic time-step control, for modeling solar cells has been developed and has been used to simulate a CdS/CdTe solar cell. These models are used to reproduce transients of carrier transport in response to step-function signals of different bias and varied light intensity. The time-step control models are also used to help convergence in steady-state simulations where constrained material constants, such as carrier lifetimes in the order of nanosecond and carrier mobility in the order of 100 cm2/Vs, must be applied.

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Date Created
2013

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Electrical and thermal transport in alternative device technologies

Description

The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit

The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the average electron energy are in close agreement with published data. A Monte Carlo device simulation tool has also been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator devices. The effects of different types of materials for buried oxide layers have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness have also been investigated. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.

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Date Created
2013

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The cost and benefit of bulk energy storage in the Arizona power transmission system

Description

This thesis addresses the issue of making an economic case for energy storage in power systems. Bulk energy storage has often been suggested for large scale electric power systems in order to levelize load; store energy when it is inexpensive

This thesis addresses the issue of making an economic case for energy storage in power systems. Bulk energy storage has often been suggested for large scale electric power systems in order to levelize load; store energy when it is inexpensive and discharge energy when it is expensive; potentially defer transmission and generation expansion; and provide for generation reserve margins. As renewable energy resource penetration increases, the uncertainty and variability of wind and solar may be alleviated by bulk energy storage technologies. The quadratic programming function in MATLAB is used to simulate an economic dispatch that includes energy storage. A program is created that utilizes quadratic programming to analyze various cases using a 2010 summer peak load from the Arizona transmission system, part of the Western Electricity Coordinating Council (WECC). The MATLAB program is used first to test the Arizona test bed with a low level of energy storage to study how the storage power limit effects several optimization out-puts such as the system wide operating costs. Very high levels of energy storage are then added to see how high level energy storage affects peak shaving, load factor, and other system applications. Finally, various constraint relaxations are made to analyze why the applications tested eventually approach a constant value. This research illustrates the use of energy storage which helps minimize the system wide generator operating cost by "shaving" energy off of the peak demand.

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Date Created
2013

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A single-phase current source solar inverter with constant instantaneous power, improved reliability, and reduced-size DC-link filter

Description

This dissertation presents a novel current source converter topology that is primarily intended for single-phase photovoltaic (PV) applications. In comparison with the existing PV inverter technology, the salient features of the proposed topology are: a) the low frequency (double of

This dissertation presents a novel current source converter topology that is primarily intended for single-phase photovoltaic (PV) applications. In comparison with the existing PV inverter technology, the salient features of the proposed topology are: a) the low frequency (double of line frequency) ripple that is common to single-phase inverters is greatly reduced; b) the absence of low frequency ripple enables significantly reduced size pass components to achieve necessary DC-link stiffness and c) improved maximum power point tracking (MPPT) performance is readily achieved due to the tightened current ripple even with reduced-size passive components. The proposed topology does not utilize any electrolytic capacitors. Instead an inductor is used as the DC-link filter and reliable AC film capacitors are utilized for the filter and auxiliary capacitor. The proposed topology has a life expectancy on par with PV panels. The proposed modulation technique can be used for any current source inverter where an unbalanced three-phase operation is desires such as active filters and power controllers. The proposed topology is ready for the next phase of microgrid and power system controllers in that it accepts reactive power commands. This work presents the proposed topology and its working principle supported by with numerical verifications and hardware results. Conclusions and future work are also presented.

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Date Created
2013

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Influence of embedded HVDC transmission on AC network performance

Description

An embedded HVDC system is a dc link with at least two ends being physically connected within a single synchronous ac network. The thesis reviews previous works on embedded HVDC, proposes a dynamic embedded HVDC model by PSCAD program, and

An embedded HVDC system is a dc link with at least two ends being physically connected within a single synchronous ac network. The thesis reviews previous works on embedded HVDC, proposes a dynamic embedded HVDC model by PSCAD program, and compares the transient stability performance among AC, DC and embedded HVDC. The test results indicate that by installing the embedded HVDC, AC network transient stability performance has been largely improved. Therefore the thesis designs a novel frequency control topology for embedded HVDC. According to the dynamic performance test results, when the embedded HVDC system equipped with a frequency control, the system transient stability will be improved further.

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Date Created
2013

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Characterization of high-resistivity silicon bulk and silicon-on-insulator wafers

Description

High-Resistivity Silicon (HRS) substrates are important for low-loss, high-performance microwave and millimeter wave devices in high-frequency telecommunication systems. The highest resistivity of up to ~10,000 ohm.cm is Float Zone (FZ) grown Si which is produced in small quantities and moderate

High-Resistivity Silicon (HRS) substrates are important for low-loss, high-performance microwave and millimeter wave devices in high-frequency telecommunication systems. The highest resistivity of up to ~10,000 ohm.cm is Float Zone (FZ) grown Si which is produced in small quantities and moderate wafer diameter. The more common Czochralski (CZ) Si can achieve resistivities of around 1000 ohm.cm, but the wafers contain oxygen that can lead to thermal donor formation with donor concentration significantly higher (~1015 cm-3) than the dopant concentration (~1012-1013 cm-3) of such high-resistivity Si leading to resistivity changes and possible type conversion of high-resistivity p-type silicon. In this research capacitance-voltage (C-V) characterization is employed to study the donor formation and type conversion of p-type High-resistivity Silicon-On-Insulator (HRSOI) wafers and the challenges involved in C-V characterization of HRSOI wafers using a Schottky contact are highlighted. The maximum capacitance of bulk or Silicon-On-Insulator (SOI) wafers is governed by the gate/contact area. During C-V characterization of high-resistivity SOI wafers with aluminum contacts directly on the Si film (Schottky contact); it was observed that the maximum capacitance is much higher than that due to the contact area, suggesting bias spreading due to the distributed transmission line of the film resistance and the buried oxide capacitance. In addition, an "S"-shape C-V plot was observed in the accumulation region. The effects of various factors, such as: frequency, contact and substrate sizes, gate oxide, SOI film thickness, film and substrate doping, carrier lifetime, contact work-function, temperature, light, annealing temperature and radiation on the C-V characteristics of HRSOI wafers are studied. HRSOI wafers have the best crosstalk prevention capability compared to other types of wafers, which plays a major role in system-on-chip configuration to prevent coupling between high frequency digital and sensitive analog circuits. Substrate crosstalk in HRSOI and various factors affecting the crosstalk, such as: substrate resistivity, separation between devices, buried oxide (BOX) thickness, radiation, temperature, annealing, light, and device types are discussed. Also various ways to minimize substrate crosstalk are studied and a new characterization method is proposed. Owing to their very low doping concentrations and the presence of oxygen in CZ wafers, HRS wafers pose a challenge in resistivity measurement using conventional techniques such as four-point probe and Hall measurement methods. In this research the challenges in accurate resistivity measurement using four-point probe, Hall method, and C-V profile are highlighted and a novel approach to extract resistivity of HRS wafers based on Impedance Spectroscopy measurements using polymer dielectrics such as Polystyrene and Poly Methyl Methacrylate (PMMA) is proposed.

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Date Created
2012