Matching Items (45)
Filtering by
- All Subjects: Electrical Engineering
- Genre: Academic theses
- Genre: Masters Thesis
- Creators: Barnaby, Hugh
- Member of: Theses and Dissertations
Description
Negative Bias Temperature Instability (NBTI) is commonly seen in p-channel transistors under negative gate voltages at an elevated temperature. The interface traps, oxide traps and NBTI mechanisms are discussed and their effect on circuit degradation and results are discussed. This thesis focuses on developing a model for simulating impact of NBTI effects at circuit level. The model mimics the effects of degradation caused by the defects.
The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
ContributorsPadala, Sudheer (Author) / Barnaby, Hugh (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
Optical receivers have many different uses covering simple infrared receivers, high speed fiber optic communication and light based instrumentation. All of them have an optical receiver that converts photons to current followed by a transimpedance amplifier to convert the current to a useful voltage. Different systems create different requirements for each receiver. High speed digital communication require high throughput with enough sensitivity to keep the bit error rate low. Instrumentation receivers have a lower bandwidth, but higher gain and sensitivity requirements. In this thesis an optical receiver for use in instrumentation in presented. It is an entirely monolithic design with the photodiodes on the same substrate as the CMOS circuitry. This allows for it to be built into a focal-plane array, but it places some restriction on the area. It is also designed for in-situ testing and must be able to cancel any low frequency noise caused by ambient light. The area restrictions prohibit the use of a DC blocking capacitor to reject the low frequency noise. In place a servo loop was wrapped around the system to reject any DC offset. A modified Cherry-Hooper architecture was used for the transimpedance amplifier. This provides the flexibility to create an amplifier with high gain and wide bandwidth that is independent of the input capacitance. The downside is the increased complexity of the design makes stability paramount to the design. Another drawback is the high noise associated with low input impedance that decouples the input capacitance from the bandwidth. This problem is compounded by the servo loop feed which leaves the output noise of some amplifiers directly referred to the input. An in depth analysis of each circuit block's noise contribution is presented.
ContributorsLaFevre, Kyle (Author) / Bakkaloglu, Bertan (Thesis advisor) / Barnaby, Hugh (Committee member) / Vermeire, Bert (Committee member) / Arizona State University (Publisher)
Created2011
Description
Programmable Metallization Cell (PMC) is a technology platform which utilizes mass transport in solid or liquid electrolyte coupled with electrochemical (redox) reactions to form or remove nanoscale metallic electrodeposits on or in the electrolyte. The ability to redistribute metal mass and form metallic nanostructure in or on a structure in situ, via the application of a bias on laterally placed electrodes, creates a large number of promising applications. A novel PMC-based lateral microwave switch was fabricated and characterized for use in microwave systems. It has demonstrated low insertion loss, high isolation, low voltage operation, low power and low energy consumption, and excellent linearity. Due to its non-volatile nature the switch operates with fewer biases and its simple planar geometry makes possible innovative device structures which can be potentially integrated into microwave power distribution circuits. PMC technology is also used to develop lateral dendritic metal electrodes. A lateral metallic dendritic network can be grown in a solid electrolyte (GeSe) or electrodeposited on SiO2 or Si using a water-mediated method. These dendritic electrodes grown in a solid electrolyte (GeSe) can be used to lower resistances for applications like self-healing interconnects despite its relatively low light transparency; while the dendritic electrodes grown using water-mediated method can be potentially integrated into solar cell applications, like replacing conventional Ag screen-printed top electrodes as they not only reduce resistances but also are highly transparent. This research effort also laid a solid foundation for developing dendritic plasmonic structures. A PMC-based lateral dendritic plasmonic structure is a device that has metallic dendritic networks grown electrochemically on SiO2 with a thin layer of surface metal nanoparticles in liquid electrolyte. These structures increase the distribution of particle sizes by connecting pre-deposited Ag nanoparticles into fractal structures and result in three significant effects, resonance red-shift, resonance broadening and resonance enhancement, on surface plasmon resonance for light trapping simultaneously, which can potentially enhance thin film solar cells' performance at longer wavelengths.
ContributorsRen, Minghan (Author) / Kozicki, Michael (Thesis advisor) / Schroder, Dieter (Committee member) / Roedel, Ronald (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2011
Description
The non-quasi-static (NQS) description of device behavior is useful in fast switching and high frequency circuit applications. Hence, it is necessary to develop a fast and accurate compact NQS model for both large-signal and small-signal simulations. A new relaxation-time-approximation based NQS MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models. The new model is valid for all regions of operation and is compatible with, and at low frequencies recovers, the quasi-static (QS) description of the MOSFET. The model is implemented in two widely used circuit simulators and tested for speed and convergence. It is verified by comparison with technology computer aided design (TCAD) simulations and experimental data, and by application of a recently developed benchmark test for NQS MOSFET models. In addition, a new and simple technique to characterize NQS and gate resistance, Rgate, MOS model parameters from measured data has been presented. In the process of experimental model verification, the effects of bulk resistance on MOSFET characteristics is investigated both theoretically and experimentally to separate it from the NQS effects.
ContributorsZhu, Zeqin (Author) / Gildenblat, Gennady (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Barnaby, Hugh (Committee member) / Mcandrew, Colin C (Committee member) / Arizona State University (Publisher)
Created2012
Description
In today's world there is a great need for sensing methods as tools to provide critical information to solve today's problems in security applications. Real time detection of trace chemicals, such as explosives, in a complex environment containing various interferents using a portable device that can be reliably deployed in a field has been a difficult challenge. A hybrid nanosensor based on the electrochemical reduction of trinitrotoluene (TNT) and the interaction of the reduction products with conducting polymer nanojunctions in an ionic liquid was fabricated. The sensor simultaneously measures the electrochemical current from the reduction of TNT and the conductance change of the polymer nanojunction caused from the reduction product. The hybrid detection mechanism, together with the unique selective preconcentration capability of the ionic liquid, provides a selective, fast, and sensitive detection of TNT. The sensor, in its current form, is capable of detecting parts per trillion level TNT in the presence of various interferents within a few minutes. A novel hybrid electrochemical-colorimetric (EC-C) sensing platform was also designed and fabricated to meet these challenges. The hybrid sensor is based on electrochemical reactions of trace explosives, colorimetric detection of the reaction products, and unique properties of the explosives in an ionic liquid (IL). This approach affords not only increased sensitivity but also selectivity as evident from the demonstrated null rate of false positives and low detection limits. Using an inexpensive webcam a detection limit of part per billion in volume (ppbV) has been achieved and demonstrated selective detection of explosives in the presence of common interferences (perfumes, mouth wash, cleaners, petroleum products, etc.). The works presented in this dissertation, were published in the Journal of the American Chemical Society (JACS, 2009) and Nano Letters (2010), won first place in the National Defense Research contest in (2009) and has been granted a patent (WO 2010/030874 A1). In addition, other work related to conductive polymer junctions and their sensing capabilities has been published in Applied Physics Letters (2005) and IEEE sensors journal (2008).
ContributorsDiaz Aguilar, Alvaro (Author) / Tao, Nongjian (Thesis advisor) / Tsui, Raymond (Committee member) / Barnaby, Hugh (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
During the last decades the development of the transistor and its continuous down-scaling allowed the appearance of cost effective wireless communication systems. New generation wideband wireless mobile systems demand high linearity, low power consumption and the low cost devices. Traditional RF systems are mainly analog-based circuitry. Contrary to digital circuits, the technology scaling results in reduction on the maximum voltage swing which makes RF design very challenging. Pushing the interface between the digital and analog boundary of the RF systems closer to the antenna becomes an attractive trend for modern RF devices. In order to take full advantages of the deep submicron CMOS technologies and digital signal processing (DSP), there is a strong trend towards the development of digital transmitter where the RF upconversion is part of the digital-to-analog conversion (DAC). This thesis presents a new digital intermediate frequency (IF) to RF transmitter for 2GHz wideband code division multiple access (W-CDMA). The proposed transmitter integrates a 3-level digital IF current-steering cell, an up-conversion mixer with a tuned load and an RF variable gain amplifier (RF VGA) with an embedded finite impulse response (FIR) reconstruction filter in the up-conversion path. A 4th-order 1.5-bit IF bandpass sigma delta modulator (BP SDM) is designed to support in-band SNR while the out-of-band quantization noise due to the noise shaping is suppressed by the embedded reconstruction filter to meet spectrum emission mask and ACPR requirements. The RF VGA provides 50dB power scaling in 10-dB steps with less than 1dB gain error. The design is fabricated in a 0.18um CMOS technology with a total core area of 0.8 x 1.6 mm2. The IC delivers 0dBm output power at 2GHz and it draws approximately 120mA from a 1.8V DC supply at the maximum output power. The measurement results proved that a digital-intensive digital IF to RF converter architecture can be successfully employed for WCDMA transmitter application.
ContributorsHan, Yongping (Author) / Kiaei, Sayfe (Thesis advisor) / Yu, Hongyu (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
Lateral Double-diffused (LDMOS) transistors are commonly used in power management, high voltage/current, and RF circuits. Their characteristics include high breakdown voltage, low on-resistance, and compatibility with standard CMOS and BiCMOS manufacturing processes. As with other semiconductor devices, an accurate and physical compact model is critical for LDMOS-based circuit design. The goal of this research work is to advance the state-of-the-art by developing a physics-based scalable compact model of LDMOS transistors. The new model, SP-HV, is constructed from a surface-potential-based bulk MOSFET model, PSP, and a nonlinear resistor model, R3. The use of independently verified and mature sub-models leads to increased accuracy and robustness of an overall LDMOS model. Improved geometry scaling and simplified statistical modeling are other useful and practical consequences of the approach. Extensions are made to both PSP and R3 for improved modeling of LDMOS devices, and one internal node is introduced to connect the two component models. The presence of the lightly-doped drift region in LDMOS transistors causes some characteristic device effects which are usually not observed in conventional MOSFETs. These include quasi-saturation, a sharp peak in transconductance at low VD, gate capacitance exceeding oxide capacitance at positive VD, negative transcapacitances CBG and CGB at positive VD, a "double-hump" IB(VG) current and expansion effects. SP-HV models these effects accurately. It also includes a scalable self-heating model which is important to model the geometry dependence of the expansion effect. SP-HV, including its scalability, is verified extensively by comparison both to TCAD simulations and experimental data. The close agreement confirms the validity of the model structure. Circuit simulation examples are presented to demonstrate its convergence.
ContributorsYao, Wei (Author) / Gildenblat, Gennady (Thesis advisor) / Barnaby, Hugh (Committee member) / Cao, Yu (Committee member) / McAndrew, Colin (Committee member) / Arizona State University (Publisher)
Created2012
Description
The front end of almost all ADCs consists of a Sample and Hold Circuit in order to make sure a constant analog value is digitized at the end of ADC. The design of Track and Hold Circuit (THA) mainly focuses on following parameters: Input frequency, Sampling frequency, dynamic Range, hold pedestal, feed through error. This thesis will discuss the importance of these parameters of a THA to the ADCs and commonly used architectures of THA. A new architecture with SiGe HBT transistors in BiCMOS 130 nm technology is presented here. The proposed topology without complicated circuitry achieves high Spurious Free Dynamic Range(SFDR) and Total Harmonic Distortion (THD).These are important figure of merits for any THA which gives a measure of non-linearity of the circuit. The proposed topology is implemented in IBM8HP 130 nm BiCMOS process combines typical emitter follower switch in bipolar THAs and output steering technique proposed in the previous work. With these techniques and the cascode transistor in the input which is used to isolate the switch from the input during the hold mode, better results have been achieved. The THA is designed to work with maximum input frequency of 250 MHz at sampling frequency of 500 MHz with input currents not more than 5mA achieving an SFDR of 78.49 dB. Simulation and results are presented, illustrating the advantages and trade-offs of the proposed topology.
ContributorsRao, Nishita Ramakrishna (Author) / Barnaby, Hugh (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Christen, Jennifer Blain (Committee member) / Arizona State University (Publisher)
Created2012
Description
Programmable metallization cell (PMC) technology employs the mechanisms of metal ion transport in solid electrolytes (SE) and electrochemical redox reactions in order to form metallic electrodeposits. When a positive bias is applied to an anode opposite to a cathode, atoms at the anode are oxidized to ions and dissolve into the SE. Under the influence of the electric field, the ions move to the cathode and become reduced to form the electrodeposits. These electrodeposits are filamentary in nature and persistent, and since they are metallic can alter the physical characteristics of the material on which they are formed. PMCs can be used as next generation memories, radio frequency (RF) switches and physical unclonable functions (PUFs).
The morphology of the filaments is impacted by the biasing conditions. Under a relatively high applied electric field, they form as dendritic elements with a low fractal dimension (FD), whereas a low electric field leads to high FD features. Ion depletion effects in the SE due to low ion diffusivity/mobility also influences the morphology by limiting the ion supply into the growing electrodeposit.
Ion transport in SE is due to hopping transitions driven by drift and diffusion force. A physical model of ion hopping with Brownian motion has been proposed, in which the ion transitions are random when time window is larger than characteristic time. The random growth process of filaments in PMC adds entropy to the electrodeposition, which leads to random features in the dendritic patterns. Such patterns has extremely high information capacity due to the fractal nature of the electrodeposits.
In this project, lateral-growth PMCs were fabricated, whose LRS resistance is less than 10Ω, which can be used as RF switches. Also, an array of radial-growth PMCs was fabricated, on which multiple dendrites, all with different shapes, could be grown simultaneously. Those patterns can be used as secure keys in PUFs and authentication can be performed by optical scanning.
A kinetic Monte Carlo (KMC) model is developed to simulate the ion transportation in SE under electric field. The simulation results matched experimental data well that validated the ion hopping model.
The morphology of the filaments is impacted by the biasing conditions. Under a relatively high applied electric field, they form as dendritic elements with a low fractal dimension (FD), whereas a low electric field leads to high FD features. Ion depletion effects in the SE due to low ion diffusivity/mobility also influences the morphology by limiting the ion supply into the growing electrodeposit.
Ion transport in SE is due to hopping transitions driven by drift and diffusion force. A physical model of ion hopping with Brownian motion has been proposed, in which the ion transitions are random when time window is larger than characteristic time. The random growth process of filaments in PMC adds entropy to the electrodeposition, which leads to random features in the dendritic patterns. Such patterns has extremely high information capacity due to the fractal nature of the electrodeposits.
In this project, lateral-growth PMCs were fabricated, whose LRS resistance is less than 10Ω, which can be used as RF switches. Also, an array of radial-growth PMCs was fabricated, on which multiple dendrites, all with different shapes, could be grown simultaneously. Those patterns can be used as secure keys in PUFs and authentication can be performed by optical scanning.
A kinetic Monte Carlo (KMC) model is developed to simulate the ion transportation in SE under electric field. The simulation results matched experimental data well that validated the ion hopping model.
ContributorsYu, Weijie (Author) / Kozicki, Michael N (Thesis advisor) / Barnaby, Hugh (Thesis advisor) / Diaz, Rodolfo (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2015
Description
Static CMOS logic has remained the dominant design style of digital systems for
more than four decades due to its robustness and near zero standby current. Static
CMOS logic circuits consist of a network of combinational logic cells and clocked sequential
elements, such as latches and flip-flops that are used for sequencing computations
over time. The majority of the digital design techniques to reduce power, area, and
leakage over the past four decades have focused almost entirely on optimizing the
combinational logic. This work explores alternate architectures for the flip-flops for
improving the overall circuit performance, power and area. It consists of three main
sections.
First, is the design of a multi-input configurable flip-flop structure with embedded
logic. A conventional D-type flip-flop may be viewed as realizing an identity function,
in which the output is simply the value of the input sampled at the clock edge. In
contrast, the proposed multi-input flip-flop, named PNAND, can be configured to
realize one of a family of Boolean functions called threshold functions. In essence,
the PNAND is a circuit implementation of the well-known binary perceptron. Unlike
other reconfigurable circuits, a PNAND can be configured by simply changing the
assignment of signals to its inputs. Using a standard cell library of such gates, a technology
mapping algorithm can be applied to transform a given netlist into one with
an optimal mixture of conventional logic gates and threshold gates. This approach
was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier
in 65nm LP technology. Simulation and chip measurements show more than 30%
improvement in dynamic power and more than 20% reduction in core area.
The functional yield of the PNAND reduces with geometry and voltage scaling.
The second part of this research investigates the use of two mechanisms to improve
the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM
devices for low voltage operation.
The third part of this research focused on the design of flip-flops with non-volatile
storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated
with both conventional D-flipflop and the PNAND circuits to implement non-volatile
logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of
system locally when a power interruption occurs. However, manufacturing variations
in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading
to an overly pessimistic design and consequently, higher energy consumption. A
detailed analysis of the design trade-offs in the driver circuitry for performing backup
and restore, and a novel method to design the energy optimal driver for a given yield is
presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented,
in which the backup time is determined on a per-chip basis, resulting in minimizing
the energy wastage and satisfying the yield constraint. To achieve a yield of 98%,
the conventional approach would have to expend nearly 5X more energy than the
minimum required, whereas the proposed tunable approach expends only 26% more
energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are
designed with the same backup and restore circuitry in 65nm technology. The embedded
logic in NV-TLFF compensates performance overhead of NVL. This leads to the
possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and-
accumulate (MAC) unit is designed to demonstrate the performance benefits of the
proposed architecture. Based on the results of HSPICE simulations, the MAC circuit
with the proposed NV-TLFF cells is shown to consume at least 20% less power and
area as compared to the circuit designed with conventional DFFs, without sacrificing
any performance.
more than four decades due to its robustness and near zero standby current. Static
CMOS logic circuits consist of a network of combinational logic cells and clocked sequential
elements, such as latches and flip-flops that are used for sequencing computations
over time. The majority of the digital design techniques to reduce power, area, and
leakage over the past four decades have focused almost entirely on optimizing the
combinational logic. This work explores alternate architectures for the flip-flops for
improving the overall circuit performance, power and area. It consists of three main
sections.
First, is the design of a multi-input configurable flip-flop structure with embedded
logic. A conventional D-type flip-flop may be viewed as realizing an identity function,
in which the output is simply the value of the input sampled at the clock edge. In
contrast, the proposed multi-input flip-flop, named PNAND, can be configured to
realize one of a family of Boolean functions called threshold functions. In essence,
the PNAND is a circuit implementation of the well-known binary perceptron. Unlike
other reconfigurable circuits, a PNAND can be configured by simply changing the
assignment of signals to its inputs. Using a standard cell library of such gates, a technology
mapping algorithm can be applied to transform a given netlist into one with
an optimal mixture of conventional logic gates and threshold gates. This approach
was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier
in 65nm LP technology. Simulation and chip measurements show more than 30%
improvement in dynamic power and more than 20% reduction in core area.
The functional yield of the PNAND reduces with geometry and voltage scaling.
The second part of this research investigates the use of two mechanisms to improve
the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM
devices for low voltage operation.
The third part of this research focused on the design of flip-flops with non-volatile
storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated
with both conventional D-flipflop and the PNAND circuits to implement non-volatile
logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of
system locally when a power interruption occurs. However, manufacturing variations
in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading
to an overly pessimistic design and consequently, higher energy consumption. A
detailed analysis of the design trade-offs in the driver circuitry for performing backup
and restore, and a novel method to design the energy optimal driver for a given yield is
presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented,
in which the backup time is determined on a per-chip basis, resulting in minimizing
the energy wastage and satisfying the yield constraint. To achieve a yield of 98%,
the conventional approach would have to expend nearly 5X more energy than the
minimum required, whereas the proposed tunable approach expends only 26% more
energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are
designed with the same backup and restore circuitry in 65nm technology. The embedded
logic in NV-TLFF compensates performance overhead of NVL. This leads to the
possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and-
accumulate (MAC) unit is designed to demonstrate the performance benefits of the
proposed architecture. Based on the results of HSPICE simulations, the MAC circuit
with the proposed NV-TLFF cells is shown to consume at least 20% less power and
area as compared to the circuit designed with conventional DFFs, without sacrificing
any performance.
ContributorsYang, Jinghua (Author) / Vrudhula, Sarma (Thesis advisor) / Barnaby, Hugh (Committee member) / Cao, Yu (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2018