In thesis, a test time reduction (a low cost test) methodology for digitally-calibrated pipeline analog-to-digital converters (ADCs) is presented. A long calibration time is required in the final test to validate performance of these designs. To reduce total test time, optimized calibration technique and calibrated effective number of bits (ENOB) prediction from calibration coefficient will be presented. With the prediction technique, failed devices can be identified only without actual calibration. This technique reduces significant amount of time for the total test time.

In-band full-duplex relays are envisioned as promising solution to increase the throughput of next generation wireless communications. Full-duplex relays, being able to transmit and receive at same carrier frequency, offers increased spectral efficiency compared to half-duplex relays that transmit and receive at different frequencies or times. The practical implementation of full-duplex relays is limited by the strong self-interference caused by the coupling of relay's own transit signals to its desired received signals. Several techniques have been proposed in literature to mitigate the relay self-interference. In this thesis, the performance of in-band full-duplex multiple-input multiple-output (MIMO) relays is considered in the context of simultaneous communications and channel estimation. In particular, adaptive spatial transmit techniques is considered to protect the full-duplex radio's receive array. It is assumed that relay's transmit and receive antenna phase centers are physically distinct. This allows the radio to employ adaptive spatial transmit and receive processing to mitigate self-interference.

The performance of this protection is dependent upon numerous factors, including channel estimation accuracy, which is the focus of this thesis. In particular, the concentration is on estimating the self-interference channel. A novel approach of simultaneous signaling to estimate the self-interference channel in MIMO full-duplex relays is proposed. To achieve this simultaneous communications

and channel estimation, a full-rank pilot signal at a reduced relative power is transmitted simultaneously with a low rank communication waveform. The self-interference mitigation is investigated in the context of eigenvalue spread of spatial relay receive co-variance matrix. Performance is demonstrated by using simulations,

in which orthogonal-frequency division-multiplexing communications and pilot sequences are employed.

Negative Bias Temperature Instability (NBTI) is commonly seen in p-channel transistors under negative gate voltages at an elevated temperature. The interface traps, oxide traps and NBTI mechanisms are discussed and their effect on circuit degradation and results are discussed. This thesis focuses on developing a model for simulating impact of NBTI effects at circuit level. The model mimics the effects of degradation caused by the defects.

The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.

The photovoltaic systems used to convert solar energy to electricity pose a multitude of design and implementation challenges, including energy conversion efficiency, partial shading effects, and power converter efficiency. Using power converters for Distributed Maximum Power Point Tracking (DMPPT) is a well-known architecture to significantly reduce power loss associated with mismatched panels. Sub-panel-level DMPPT is shown to have up to 14.5% more annual energy yield than panel-level DMPPT, and requires an efficient medium power converter.

This research aims at implementing a highly efficient power management system at sub-panel level with focus on system cost and form-factor. Smaller form-factor motivates increased converter switching frequencies to significantly reduce the size of converter passives and substantially improve transient performance. But, currently available power MOSFETs put a constraint on the highest possible switching frequency due to increased switching losses. The solution is Gallium Nitride based power devices, which deliver figure of merit (FOM) performance at least an order of magnitude higher than existing silicon MOSFETs. Low power loss, high power density, low cost and small die sizes are few of the qualities that make e-GaN superior to its Si counterpart. With careful design, e-GaN can enable a 20-30% improvement in power stage efficiency compared to converters using Si MOSFETs.

The main objective of this research is to develop a highly integrated, high efficiency, 20MHz, hybrid GaN-CMOS DC-DC MPPT converter for a 12V/5A sub-panel. Hard and soft switching boost converter topologies are investigated within this research, and an innovative CMOS gate drive technique for efficiently driving an e-GaN power stage is presented in this work. The converter controller also employs a fast converging analog MPPT control technique.

A single solar cell provides close to 0.5 V output at its maximum power point, which is very

low for any electronic circuit to operate. To get rid of this problem, traditionally multiple

solar cells are connected in series to get higher voltage. The disadvantage of this approach

is the efficiency loss for partial shading or mismatch. Even as low as 6-7% of shading can

result in more than 90% power loss. Therefore, Maximum Power Point Tracking (MPPT)

at single solar cell level is the most efficient way to extract power from solar cell.

Power Management IC (MPIC) used to extract power from single solar cell, needs to

start at 0.3 V input. MPPT circuitry should be implemented with minimal power and area

overhead. To start the PMIC at 0.3 V, a switch capacitor charge pump is utilized as an

auxiliary start up circuit for generating a regulated 1.8 V auxiliary supply from 0.3 V input.

The auxiliary supply powers up a MPPT converter followed by a regulated converter. At

the start up both the converters operate at 100 kHz clock with 80% duty cycle and system

output voltage starts rising. When the system output crosses 2.7 V, the auxiliary start up

circuit is turned off and the supply voltage for both the converters is derived from the system

output itself. In steady-state condition the system output is regulated to 3.0 V.

A fully integrated analog MPPT technique is proposed to extract maximum power from

the solar cell. This technique does not require Analog to Digital Converter (ADC) and

Digital Signal Processor (DSP), thus reduces area and power overhead. The proposed

MPPT techniques includes a switch capacitor based power sensor which senses current of

boost converter without using any sense resistor. A complete system is designed which

starts from 0.3 V solar cell voltage and provides regulated 3.0 V system output.

RF transmitter manufacturers go to great extremes and expense to ensure that their product meets the RF output power requirements for which they are designed. Therefore, there is an urgent need for in-field monitoring of output power and gain to bring down the costs of RF transceiver testing and ensure product reliability. Built-in self-test (BIST) techniques can perform such monitoring without the requirement for expensive RF test equipment. In most BIST techniques, on-chip resources, such as peak detectors, power detectors, or envelope detectors are used along with frequency down conversion to analyze the output of the design under test (DUT). However, this conversion circuitry is subject to similar process, voltage, and temperature (PVT) variations as the DUT and affects the measurement accuracy. So, it is important to monitor BIST performance over time, voltage and temperature, such that accurate in-field measurements can be performed.

In this research, a multistep BIST solution using only baseband signals for test analysis is presented. An on-chip signal generation circuit, which is robust with respect to time, supply voltage, and temperature variations is used for self-calibration of the BIST system before the DUT measurement. Using mathematical modelling, an analytical expression for the output signal is derived first and then test signals are devised to extract the output power of the DUT. By utilizing a standard 180nm IBM7RF CMOS process, a 2.4GHz low power RF IC incorporated with the proposed BIST circuitry and on-chip test signal source is designed and fabricated. Experimental results are presented, which show this BIST method can monitor the DUT’s output power with +/- 0.35dB accuracy over a 20dB power dynamic range.

High-efficiency DC-DC converters make up one of the important blocks of state-of-the-art power supplies. The trend toward high level of transistor integration has caused load current demands to grow significantly. Supplying high output current and minimizing output current ripple has been a driving force behind the evolution of Multi-phase topologies. Ability to supply large output current with improved efficiency, reduction in the size of filter components, improved transient response make multi-phase topologies a preferred choice for low voltage-high current applications.

Current sensing capability inside a system is much sought after for applications which include Peak-current mode control, Current limiting, Overload protection. Current sensing is extremely important for current sharing in Multi-phase topologies. Existing approaches such as Series resistor, SenseFET, inductor DCR based current sensing are simple but their drawbacks such low efficiency, low accuracy, limited bandwidth demand a novel current sensing scheme.

This research presents a systematic design procedure of a 5V - 1.8V, 8A 4-Phase Buck regulator with a novel current sensing scheme based on replication of the inductor current. The proposed solution consists of detailed system modeling in PLECS which includes modification of the peak current mode model to accommodate the new current sensing element, derivation of power-stage and Plant transfer functions, Controller design. The proposed model has been verified through PLECS simulations and compared with a transistor-level implementation of the system. The time-domain parameters such as overshoot and settling-time simulated through transistor-level

implementation is in close agreement with the results obtained from the PLECS model.

Point of Load (PoL) converters are important components to the power distribution system in computer power supplies as well as automotive, space, nuclear, and medical electronics. These converters often require high output current capability, low form factor, and high conversion ratios (step-down) without sacrificing converter efficiency. This work presents hybrid silicon/gallium nitride (CMOS/GaN) power converter architectures as a solution for high-current, small form-factor PoL converters. The presented topologies use discrete GaN power devices and CMOS integrated drivers and controller loop. The presented power converters operate in the tens of MHz range to reduce the form factor by reducing the size of the off-chip passive inductor and capacitor. Higher conversion ratio is achieved through a fast control loop and the use of GaN power devices that exhibit low parasitic gate capacitance and minimize pulse swallowing.

This work compares three discrete buck power converter architectures: single-stage, multi-phase with 2 phases, and stacked-interleaved, using components-off-the-shelf (COTS). Each of the implemented power converters achieves over 80% peak efficiency with switching speeds up-to 10MHz for high conversion ratio from 24V input to 5V output and maximum load current of 10A. The performance of the three architectures is compared in open loop and closed loop configurations with respect to efficiency, output voltage ripple, and power stage form factor.

Additionally, this work presents an integrated CMOS gate driver solution in CMOS 0.35um technology. The CMOS integrated circuit (IC) includes the gate driver and the closed loop controller for directly driving a single-stage GaN architecture. The designed IC efficiently drives the GaN devices up to 20MHz switching speeds. The presented controller technique uses voltage mode control with an innovative cascode driver architecture to allow a 3.3V CMOS devices to effectively drive GaN devices that require 5V gate signal swing. Furthermore, the designed power converter is expected to operate under 400MRad of total dose, thus enabling its use in high-radiation environments for the large hadron collider at CERN and nuclear facilities.

Traditional wireless communication systems operate in duplexed modes i.e. using time division duplexing or frequency division duplexing. These methods can respectively emulate full duplex mode operation or realize full duplex mode operation with decreased spectral efficiency. This thesis presents a novel method of achieving full duplex operation by actively cancelling out the transmitted signal in pseudo-real time. With appropriate hardware, the algorithms and techniques used in this work can be implemented in real time without any knowledge of the channel or any training sequence. Convergence times of down to 1 ms can be achieved which is adequate for the coherence bandwidths associated with an indoor environment. By utilizing adaptive cancellation, additional overhead for re-calibrating the system in other open-loop methods is not needed.

A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess current response in a bipolar transistor given inputs of interface (NIT) and oxide defects (NOT) which are caused by ionizing radiation exposure. Existing models that attempt to predict this excess base current response are derived and discussed in detail. An improved model is proposed which modifies the existing model and incorporates the impact of charged interface trap defects on radiation-induced excess base current. The improved accuracy of the new model in predicting excess base current response in lateral PNP (LPNP) is then verified with Technology Computer Aided Design (TCAD) simulations. Finally, experimental data and compared with the improved and existing model calculations.