Matching Items (11)
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- All Subjects: Electrical Engineering
- Genre: Doctoral Dissertation
- Status: Published
Description
Sliding-Mode Control (SMC) has several benefits over traditional Proportional-Integral-Differential (PID) control in terms of fast transient response, robustness to parameter and component variations, and low sensitivity to loop disturbances. An All-Digital Sliding-Mode (ADSM) controlled DC-DC converter, utilizing single-bit oversampled frequency domain digitizers is proposed. In the proposed approach, feedback and reference digitizing Analog-to-Digital Converters (ADC) are based on a single-bit, first order Sigma-Delta frequency to digital converter, running at 32MHz over-sampling rate. The ADSM regulator achieves 1% settling time in less than 5uSec for a load variation of 600mA. The sliding-mode controller utilizes a high-bandwidth hysteretic differentiator and an integrator to perform the sliding control law in digital domain. The proposed approach overcomes the steady state error (or DC offset), and limits the switching frequency range, which are the two common problems associated with sliding-mode controllers. The IC is designed and fabricated on a 0.35um CMOS process occupying an active area of 2.72mm-squared. Measured peak efficiency is 83%.
ContributorsDashtestani, Ahmad (Author) / Bakkaloglu, Bertan (Thesis advisor) / Thornton, Trevor (Committee member) / Song, Hongjiang (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
Data centers connect a larger number of servers requiring IO and switches with low power and delay. Virtualization of IO and network is crucial for these servers, which run virtual processes for computing, storage, and apps. We propose using the PCI Express (PCIe) protocol and a new PCIe switch fabric for IO and switch virtualization. The switch fabric has little data buffering, allowing up to 512 physical 10 Gb/s PCIe2.0 lanes to be connected via a switch fabric. The switch is scalable with adapters running multiple adaptation protocols, such as Ethernet over PCIe, PCIe over Internet, or FibreChannel over Ethernet. Such adaptation protocols allow integration of IO often required for disjoint datacenter applications such as storage and networking. The novel switch fabric based on space-time carrier sensing facilitates high bandwidth, low power, and low delay multi-protocol switching. To achieve Terabit switching, both time (high transmission speed) and space (multi-stage interconnection network) technologies are required. In this paper, we present the design of an up to 256 lanes Clos-network of multistage crossbar switch fabric for PCIe system. The switch core consists of 48 16x16 crossbar sub-switches. We also propose a new output contention resolution algorithm utilizing an out-of-band protocol of Request-To-Send (RTS), Clear-To-Send (CTS) before sending PCIe packets through the switch fabric. Preliminary power and delay estimates are provided.
ContributorsLuo, Haojun (Author) / Hui, Joseph (Thesis advisor) / Song, Hongjiang (Committee member) / Reisslein, Martin (Committee member) / Zhang, Yanchao (Committee member) / Arizona State University (Publisher)
Created2013
Description
Pulse Density Modulation- (PDM-) based class-D amplifiers can reduce non-linearity and tonal content due to carrier signal in Pulse Width Modulation - (PWM-) based amplifiers. However, their low-voltage analog implementations also require a linear- loop filter and a quantizer. A PDM-based class-D audio amplifier using a frequency-domain quantization is presented in this paper. The digital-intensive frequency domain approach achieves high linearity under low-supply regimes. An analog comparator and a single-bit quantizer are replaced with a Current-Controlled Oscillator- (ICO-) based frequency discriminator. By using the ICO as a phase integrator, a third-order noise shaping is achieved using only two analog integrators. A single-loop, singlebit class-D audio amplifier is presented with an H-bridge switching power stage, which is designed and fabricated on a 0.18 um CMOS process, with 6 layers of metal achieving a total harmonic distortion plus noise (THD+N) of 0.065% and a peak power efficiency of 80% while driving a 4-ohms loudspeaker load. The amplifier can deliver the output power of 280 mW.
ContributorsLee, Junghan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ozev, Sule (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2011
Description
Thin film transistors (TFTs) are being used in a wide variety of applications such as image sensors, radiation detectors, as well as for use in liquid crystal displays. However, there is a conspicuous absence of interface electronics for bridging the gap between the flexible sensors and digitized displays. Hence is the need to build the same. In this thesis, the feasibility of building mixed analog circuits in TFTs are explored and demonstrated. A flexible CMOS op-amp is demonstrated using a-Si:H and pentacene TFTs. The achieved performance is ¡Ö 50 dB of DC open loop gain with unity gain frequency (UGF) of 7 kHz. The op-amp is built on the popular 2 stage topology with the 2nd stage being cascoded to provide sufficient gain. A novel biasing circuit was successfully developed modifying the gm biasing circuit to retard the performance degradation as the TFTs aged. A switched capacitor 7 bit DAC was developed in only nMOS topology using a-Si:H TFTs, based on charge sharing concept. The DAC achieved a maximum differential non-linearity (DNL) of 0.6 least significant bit (LSB), while the maximum integral non-linearity (INL) was 1 LSB. TFTs were used as switches in this architecture; as a result the performance was quite unchanged even as the TFTs degraded. A 5 bit fully flash ADC was also designed using all nMOS a-Si:H TFTs. Gray coding was implemented at the output to avoid errors due to comparator meta-stability. Finally a 5 bit current steering DAC was also built using all nMOS a-Si:H TFTs. However, due to process variation, the DNL was increased to 1.2 while the INL was about 1.8 LSB. Measurements were made on the external stress effects on zinc indium oxide (ZIO) TFTs. Electrically induced stresses were studied applying DC bias on the gate and drain. These stresses shifted the device characteristics like threshold voltage and mobility. The TFTs were then mechanically stressed by stretching them across cylindrical structures of various radii. Both the subthreshold swing and mobility underwent significant changes when the stress was tensile while the change was minor under compressive stress, applied parallel to channel length.
ContributorsDey, Aritra (Author) / Allee, David R. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Garrity, Douglas A (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence T (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
Description
The microelectronics technology has seen a tremendous growth over the past sixty years. The advancements in microelectronics, which shows the capability of yielding highly reliable and reproducible structures, have made the mass production of integrated electronic components feasible. Miniaturized, low-cost, and accurate sensors became available due to the rise of the microelectronics industry. A variety of sensors are being used extensively in many portable applications. These sensors are promising not only in research area but also in daily routine applications.
However, many sensing systems are relatively bulky, complicated, and expensive and main advantages of new sensors do not play an important role in practical applications. Many challenges arise due to intricacies for sensor packaging, especially operation in a solution environment. Additional problems emerge when interfacing sensors with external off-chip components. A large amount of research in the field of sensors has been focused on how to improve the system integration.
This work presents new methods for the design, fabrication, and integration of sensor systems. This thesis addresses these challenges, for example, interfacing microelectronic system to a liquid environment and developing a new technique for impedimetric measurement. This work also shows a new design for on-chip optical sensor without any other extra components or post-processing.
However, many sensing systems are relatively bulky, complicated, and expensive and main advantages of new sensors do not play an important role in practical applications. Many challenges arise due to intricacies for sensor packaging, especially operation in a solution environment. Additional problems emerge when interfacing sensors with external off-chip components. A large amount of research in the field of sensors has been focused on how to improve the system integration.
This work presents new methods for the design, fabrication, and integration of sensor systems. This thesis addresses these challenges, for example, interfacing microelectronic system to a liquid environment and developing a new technique for impedimetric measurement. This work also shows a new design for on-chip optical sensor without any other extra components or post-processing.
ContributorsLuo, Tao (Author) / Blain Christen, Jennifer (Thesis advisor) / Song, Hongjiang (Committee member) / Goryll, Michael (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Description
There is an increasing demand for fully integrated point-of-load (POL) isolated DC-DC converters that can provide an isolation barrier between the primary and the secondary side, while delivering a low ripple, low noise regulated voltage at their isolated sides to a high dynamic range, sensitive mixed signal devices, such as sensors, current-shunt-monitors and ADCs. For these applications, smaller system size and integration level is important because the whole system may need to fit to limited space. Traditional methods for providing isolated power are discrete solutions using bulky transformers. Miniaturization of isolated POL regulators is becoming highly desirable for low power applications.
A fully integrated, low noise isolated point-of-load DC-DC converter for supply regulation of high dynamic range analog and mixed signal sensor signal-chains is presented. The isolated DC-DC converter utilizes an integrated planar air-core micro-transformer as a coupled resonator and isolation barrier and enables direct connection of low-voltage mixed signal circuits to higher supply rails. The air core transformer is driven at its primary resonant frequency of 100 MHz to achieve maximum power transfer. A mixed-signal perturb-and-observe based frequency search algorithm is developed to improve maximum power transfer efficiency by 60% across the isolation barrier compared to fixed driving frequency method. The isolated converter’s output ripple is reduced by utilizing spread spectrum clocking in the driver. An isolated PMOS LDO in the secondary side is used to suppress switching noise and ripple by 21dB. Conducted and radiated EMI distribution on the IC is measured by a set of integrated ring oscillator based noise sensors with -68dBm noise sensitivity. The proposed isolated converter achieves highest level of integration with respect to earlier reported integrated isolated converters, while providing 50V on-chip junction isolation without the need for extra silicon post-processing steps.
A fully integrated, low noise isolated point-of-load DC-DC converter for supply regulation of high dynamic range analog and mixed signal sensor signal-chains is presented. The isolated DC-DC converter utilizes an integrated planar air-core micro-transformer as a coupled resonator and isolation barrier and enables direct connection of low-voltage mixed signal circuits to higher supply rails. The air core transformer is driven at its primary resonant frequency of 100 MHz to achieve maximum power transfer. A mixed-signal perturb-and-observe based frequency search algorithm is developed to improve maximum power transfer efficiency by 60% across the isolation barrier compared to fixed driving frequency method. The isolated converter’s output ripple is reduced by utilizing spread spectrum clocking in the driver. An isolated PMOS LDO in the secondary side is used to suppress switching noise and ripple by 21dB. Conducted and radiated EMI distribution on the IC is measured by a set of integrated ring oscillator based noise sensors with -68dBm noise sensitivity. The proposed isolated converter achieves highest level of integration with respect to earlier reported integrated isolated converters, while providing 50V on-chip junction isolation without the need for extra silicon post-processing steps.
ContributorsLiu, Chengxi (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Song, Hongjiang (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
Description
A novel integrated constant current LED driver design on a single chip is developed in this dissertation. The entire design consists of two sections. The first section is a DC-DC switching regulator (boost regulator) as the frontend power supply; the second section is the constant current LED driver system.
In the first section, a pulse width modulated (PWM) peak current mode boost regulator is utilized. The overall boost regulator system and its related sub-cells are explained. Among them, an original error amplifier design, a current sensing circuit and slope compensation circuit are presented.
In the second section – the focus of this dissertation – a highly accurate constant current LED driver system design is unveiled. The detailed description of this highly accurate LED driver system and its related sub-cells are presented. A hybrid PWM and linear current modulation scheme to adjust the LED driver output currents is explained. The novel design ideas to improve the LED current accuracy and channel-to-channel output current mismatch are also explained in detail. These ideas include a novel LED driver system architecture utilizing 1) a dynamic current mirror structure and 2) a closed loop structure to keep the feedback loop of the LED driver active all the time during both PWM on-duty and PWM off-duty periods. Inside the LED driver structure, the driving amplifier with a novel slew rate enhancement circuit to dramatically accelerate its response time is also presented.
In the first section, a pulse width modulated (PWM) peak current mode boost regulator is utilized. The overall boost regulator system and its related sub-cells are explained. Among them, an original error amplifier design, a current sensing circuit and slope compensation circuit are presented.
In the second section – the focus of this dissertation – a highly accurate constant current LED driver system design is unveiled. The detailed description of this highly accurate LED driver system and its related sub-cells are presented. A hybrid PWM and linear current modulation scheme to adjust the LED driver output currents is explained. The novel design ideas to improve the LED current accuracy and channel-to-channel output current mismatch are also explained in detail. These ideas include a novel LED driver system architecture utilizing 1) a dynamic current mirror structure and 2) a closed loop structure to keep the feedback loop of the LED driver active all the time during both PWM on-duty and PWM off-duty periods. Inside the LED driver structure, the driving amplifier with a novel slew rate enhancement circuit to dramatically accelerate its response time is also presented.
ContributorsWang, Ge (Author) / Holbert, Keith E. (Thesis advisor) / Song, Hongjiang (Committee member) / Ayyanar, Raja (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2016
Description
Visible light communication (VLC) is the promise of a high data rate wireless network for both indoor and outdoor uses. It competes with 5G radio frequency (RF) system as well. Even though the breakthrough of Gallium Nitride (GaN) based micro-light-emitting-diodes (micro-LEDs) enhances the -3dB modulation bandwidth dramatically from tens of MHz to hundreds of MHz, the optical power onto a fast photo receiver drops exponentially. It determines the signal to noise ratio (SNR) of VLC. For full implementation of the useful high data-rate VLC link enabled by a GaN-based micro-LED, it needs focusing optics and a tracking system. In this dissertation, we demonstrate a novel active on-chip monitoring system for VLC using a GaN-based micro-LED and none-return-to-zero on-off keying (NRZ-OOK) modulation scheme. By this innovative technique without manual focusing, the field of view (FOV) was enlarged to 120° and data rates up to 600 Mbps at a bit error rate (BER) of 2.1×10⁻⁴ were achieved. This work demonstrates the establishment of a VLC physical link. It shows improved communication quality by orders, making it optimized for real communications.
This dissertation also gives an experimental demonstration of non-line-of-sight (NLOS) visible light communication (VLC) using a single 80 μm gallium nitride (GaN) based micro-light-emitting diode (micro-LED). IEEE 802.11ac modulation scheme with 80 MHz bandwidth, as an entry level of the fifth generation of Wi-Fi, was employed to use the micro-LED bandwidth efficiently. These practical techniques were successfully utilized to achieve a demonstration of line-of-sight (LOS) VLC at a speed of 433 Mbps, and a bit error rate (BER) of 10⁻⁵ with a free space transmit distance 3.6 m. Besides this, we demonstrated directed NLOS VLC links based on mirror reflections with a data rate of 433 Mbps and a BER of 10⁻⁴. For non-directed NLOS VLC using a print paper as the reflective material, 195 Mbps data rate and a BER of 10⁻⁵ was achieved.
This dissertation also gives an experimental demonstration of non-line-of-sight (NLOS) visible light communication (VLC) using a single 80 μm gallium nitride (GaN) based micro-light-emitting diode (micro-LED). IEEE 802.11ac modulation scheme with 80 MHz bandwidth, as an entry level of the fifth generation of Wi-Fi, was employed to use the micro-LED bandwidth efficiently. These practical techniques were successfully utilized to achieve a demonstration of line-of-sight (LOS) VLC at a speed of 433 Mbps, and a bit error rate (BER) of 10⁻⁵ with a free space transmit distance 3.6 m. Besides this, we demonstrated directed NLOS VLC links based on mirror reflections with a data rate of 433 Mbps and a BER of 10⁻⁴. For non-directed NLOS VLC using a print paper as the reflective material, 195 Mbps data rate and a BER of 10⁻⁵ was achieved.
ContributorsLu, Zhijian (Author) / Zhao, Yuji (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Bliss, Daniel (Committee member) / Arizona State University (Publisher)
Created2017
Description
As wireless communication enters smartphone era, more complicated communication technologies are being used to transmit higher data rate. Power amplifier (PA) has to work in back-off region, while this inevitably reduces battery life for cellphones. Various techniques have been reported to increase PA efficiency, such as envelope elimination and restoration (EER) and envelope tracking (ET). However, state of the art ET supply modulators failed to address high efficiency, high slew rate, and accurate tracking concurrently.
In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.
In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.
ContributorsJing, Yue (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Kitchen, Jennifer (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2017