Matching Items (29)
Filtering by
- All Subjects: Electrical Engineering
- Genre: Doctoral Dissertation
- Creators: Kitchen, Jennifer
Description
Radio frequency (RF) transceivers require a disproportionately high effort in terms of test development time, test equipment cost, and test time. The relatively high test cost stems from two contributing factors. First, RF transceivers require the measurement of a diverse set of specifications, requiring multiple test set-ups and long test times, which complicates load-board design, debug, and diagnosis. Second, high frequency operation necessitates the use of expensive equipment, resulting in higher per second test time cost compared with mixed-signal or digital circuits. Moreover, in terms of the non-recurring engineering cost, the need to measure complex specfications complicates the test development process and necessitates a long learning process for test engineers. Test time is dominated by changing and settling time for each test set-up. Thus, single set-up test solutions are desirable. Loop-back configuration where the transmitter output is connected to the receiver input are used as the desirable test set- up for RF transceivers, since it eliminates the reliance on expensive instrumentation for RF signal analysis and enables measuring multiple parameters at once. In-phase and Quadrature (IQ) imbalance, non-linearity, DC offset and IQ time skews are some of the most detrimental imperfections in transceiver performance. Measurement of these parameters in the loop-back mode is challenging due to the coupling between the receiver (RX) and transmitter (TX) parameters. Loop-back based solutions are proposed in this work to resolve this issue. A calibration algorithm for a subset of the above mentioned impairments is also presented. Error Vector Magnitude (EVM) is a system-level parameter that is specified for most advanced communication standards. EVM measurement often takes extensive test development efforts, tester resources, and long test times. EVM is analytically related to system impairments, which are typically measured in a production test i environment. Thus, EVM test can be eliminated from the test list if the relations between EVM and system impairments are derived independent of the circuit implementation and manufacturing process. In this work, the focus is on the WLAN standard, and deriving the relations between EVM and three of the most detrimental impairments for QAM/OFDM based systems (IQ imbalance, non-linearity, and noise). Having low cost test techniques for measuring the RF transceivers imperfections and being able to analytically compute EVM from the measured parameters is a complete test solution for RF transceivers. These techniques along with the proposed calibration method can be used in improving the yield by widening the pass/fail boundaries for transceivers imperfections. For all of the proposed methods, simulation and hardware measurements prove that the proposed techniques provide accurate characterization of RF transceivers.
ContributorsNassery, Afsaneh (Author) / Ozev, Sule (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kiaei, Sayfe (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photovoltaic (PV) systems are affected by converter losses, partial shading and other mismatches in the panels. This dissertation introduces a sub-panel maximum power point tracking (MPPT) architecture together with an integrated CMOS current sensor circuit on a chip to reduce the mismatch effects, losses and increase the efficiency of the PV system. The sub-panel MPPT increases the efficiency of the PV during the shading and replaces the bypass diodes in the panels with an integrated MPPT and DC-DC regulator. For the integrated MPPT and regulator, the research developed an integrated standard CMOS low power and high common mode range Current-to-Digital Converter (IDC) circuit and its application for DC-DC regulator and MPPT. The proposed charge based CMOS switched-capacitor circuit directly digitizes the output current of the DC-DC regulator without an analog-to-digital converter (ADC) and the need for high-voltage process technology. Compared to the resistor based current-sensing methods that requires current-to-voltage circuit, gain block and ADC, the proposed CMOS IDC is a low-power efficient integrated circuit that achieves high resolution, lower complexity, and lower power consumption. The IDC circuit is fabricated on a 0.7 um CMOS process, occupies 2mm x 2mm and consumes less than 27mW. The IDC circuit has been tested and used for boost DC-DC regulator and MPPT for photo-voltaic system. The DC-DC converter has an efficiency of 95%. The sub-module level power optimization improves the output power of a shaded panel by up to 20%, compared to panel MPPT with bypass diodes.
ContributorsMarti-Arbona, Edgar (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2014
Description
Several state of the art, monitoring and control systems, such as DC motor
controllers, power line monitoring and protection systems, instrumentation systems and battery monitors require direct digitization of a high voltage input signals. Analog-to-Digital Converters (ADCs) that can digitize high voltage signals require high linearity and low voltage coefficient capacitors. A built in self-calibration and digital-trim algorithm correcting static mismatches in Capacitive Digital-to-Analog Converter (CDAC) used in Successive Approximation Register Analog to Digital Converters (SARADCs) is proposed. The algorithm uses a dynamic error correction (DEC) capacitor to cancel the static errors occurring in each capacitor of the array as the first step upon power-up and eliminates the need for an extra calibration DAC. Self-trimming is performed digitally during normal ADC operation. The algorithm is implemented on a 14-bit high-voltage input range SAR ADC with integrated dynamic error correction capacitors. The IC is fabricated in 0.6-um high voltage compliant CMOS process, accepting up to 24Vpp differential input signal. The proposed approach achieves 73.32 dB Signal to Noise and Distortion Ratio (SNDR) which is an improvement of 12.03 dB after self-calibration at 400 kS/s sampling rate, consuming 90-mW from a +/-15V supply. The calibration circuitry occupies 28% of the capacitor DAC, and consumes less than 15mW during operation. Measurement results shows that this algorithm reduces INL from as high as 7 LSBs down to 1 LSB and it works even in the presence of larger mismatches exceeding 260 LSBs. Similarly, it reduces DNL errors from 10 LSBs down to 1 LSB. The ADC occupies an active area of 9.76 mm2.
controllers, power line monitoring and protection systems, instrumentation systems and battery monitors require direct digitization of a high voltage input signals. Analog-to-Digital Converters (ADCs) that can digitize high voltage signals require high linearity and low voltage coefficient capacitors. A built in self-calibration and digital-trim algorithm correcting static mismatches in Capacitive Digital-to-Analog Converter (CDAC) used in Successive Approximation Register Analog to Digital Converters (SARADCs) is proposed. The algorithm uses a dynamic error correction (DEC) capacitor to cancel the static errors occurring in each capacitor of the array as the first step upon power-up and eliminates the need for an extra calibration DAC. Self-trimming is performed digitally during normal ADC operation. The algorithm is implemented on a 14-bit high-voltage input range SAR ADC with integrated dynamic error correction capacitors. The IC is fabricated in 0.6-um high voltage compliant CMOS process, accepting up to 24Vpp differential input signal. The proposed approach achieves 73.32 dB Signal to Noise and Distortion Ratio (SNDR) which is an improvement of 12.03 dB after self-calibration at 400 kS/s sampling rate, consuming 90-mW from a +/-15V supply. The calibration circuitry occupies 28% of the capacitor DAC, and consumes less than 15mW during operation. Measurement results shows that this algorithm reduces INL from as high as 7 LSBs down to 1 LSB and it works even in the presence of larger mismatches exceeding 260 LSBs. Similarly, it reduces DNL errors from 10 LSBs down to 1 LSB. The ADC occupies an active area of 9.76 mm2.
ContributorsThirunakkarasu, Shankar (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Kozicki, Michael (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
Due to high level of integration in RF System on Chip (SOC), the test access points are limited to the baseband and RF inputs/outputs of the system. This limited access poses a big challenge particularly for advanced RF architectures where calibration of internal parameters is necessary and ensure proper operation. Therefore low-overhead built-in Self-Test (BIST) solution for advanced RF transceiver is proposed. In this dissertation. Firstly, comprehensive BIST solution for RF polar transceivers using on-chip resources is presented. In the receiver, phase and gain mismatches degrade sensitivity and error vector magnitude (EVM). In the transmitter, delay skew between the envelope and phase signals and the finite envelope bandwidth can create intermodulation distortion (IMD) that leads to violation of spectral mask requirements. Characterization and calibration of these parameters with analytical model would reduce the test time and cost considerably. Hence, a technique to measure and calibrate impairments of the polar transceiver in the loop-back mode is proposed.
Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced.
Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method.
Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed.
Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.
Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced.
Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method.
Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed.
Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.
ContributorsJeong, Jae Woong (Author) / Ozev, Sule (Thesis advisor) / Kitchen, Jennifer (Committee member) / Cao, Yu (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2015
Description
The demand for the higher data rate in the wireless telecommunication is increasing rapidly. Providing higher data rate in cellular telecommunication systems is limited because of the limited physical resources such as telecommunication frequency channels. Besides, interference with the other users and self-interference signal in the receiver are the other challenges in increasing the bandwidth of the wireless telecommunication system.
Full duplex wireless communication transmits and receives at the same time and the same frequency which was assumed impossible in the conventional wireless communication systems. Full duplex wireless communication, compared to the conventional wireless communication, doubles the channel efficiency and bandwidth. In addition, full duplex wireless communication system simplifies the reusing of the radio resources in small cells to eliminate the backhaul problem and simplifies the management of the spectrum. Finally, the full duplex telecommunication system reduces the costs of future wireless communication systems.
The main challenge in the full duplex wireless is the self-interference signal at the receiver which is very large compared to the receiver noise floor and it degrades the receiver performance significantly. In this dissertation, different techniques for the antenna interface and self-interference cancellation are proposed for the wireless full duplex transceiver. These techniques are designed and implemented on CMOS technology. The measurement results show that the full duplex wireless is possible for the short range and cellular wireless communication systems.
Full duplex wireless communication transmits and receives at the same time and the same frequency which was assumed impossible in the conventional wireless communication systems. Full duplex wireless communication, compared to the conventional wireless communication, doubles the channel efficiency and bandwidth. In addition, full duplex wireless communication system simplifies the reusing of the radio resources in small cells to eliminate the backhaul problem and simplifies the management of the spectrum. Finally, the full duplex telecommunication system reduces the costs of future wireless communication systems.
The main challenge in the full duplex wireless is the self-interference signal at the receiver which is very large compared to the receiver noise floor and it degrades the receiver performance significantly. In this dissertation, different techniques for the antenna interface and self-interference cancellation are proposed for the wireless full duplex transceiver. These techniques are designed and implemented on CMOS technology. The measurement results show that the full duplex wireless is possible for the short range and cellular wireless communication systems.
ContributorsAyati, Seyyed Amir (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Bliss, Daniel (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2017
Description
A 4-phase, quasi-current-mode hysteretic buck converter with digital frequency synchronization, online comparator offset-calibration and digital current sharing control is presented. The switching frequency of the hysteretic converter is digitally synchronized to the input clock reference with less than ±1.5% error in the switching frequency range of 3-9.5MHz. The online offset calibration cancels the input-referred offset of the hysteretic comparator and enables ±1.1% voltage regulation accuracy. Maximum current-sharing error of ±3.6% is achieved by a duty-cycle-calibrated delay line based PWM generator, without affecting the phase synchronization timing sequence. In light load conditions, individual converter phases can be disabled, and the final stage power converter output stage is segmented for high efficiency. The DC-DC converter achieves 93% peak efficiency for Vi = 2V and Vo = 1.6V.
ContributorsSun, Ming (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Seo, Jae-Sun (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2017
Description
Performance failure due to aging is an increasing concern for RF circuits. While most aging studies are focused on the concept of mean-time-to-failure, for analog circuits, aging results in continuous degradation in performance before it causes catastrophic failures. In this regard, the lifetime of RF/analog circuits, which is defined as the point where at least one specification fails, is not just determined by aging at the device level, but also by the slack in the specifications, process variations, and the stress conditions on the devices. In this dissertation, firstly, a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices at design-time (pre-silicon) is presented. An algorithm to determine reliability hotspots in the circuit is proposed and design-time optimization methods to enhance the lifetime by making the most likely to fail circuit components more reliable is performed. RF circuits are used as test cases to demonstrate that the lifetime can be enhanced using the proposed design-time technique with low area and no performance impact. Secondly, in-field monitoring and recovering technique for the performance of aged RF circuits is discussed. The proposed in-field technique is based on two phases: During the design time, degradation profiles of the aged circuit are obtained through simulations. From these profiles, hotspot identification of aged RF circuits are conducted and the circuit variable that is easy to measure but highly correlated to the performance of the primary circuit is determined for a monitoring purpose. After deployment, an on-chip DC monitor is periodically activated and its results are used to monitor, and if necessary, recover the circuit performances degraded by aging mechanisms. It is also necessary to co-design the monitoring and recovery mechanism along with the primary circuit for minimal performance impact. A low noise amplifier (LNA) and LC-tank oscillators are fabricated for case studies to demonstrate that the lifetime can be enhanced using the proposed monitoring and recovery techniques in the field. Experimental results with fabricated LNA/oscillator chips show the performance degradation from the accelerated stress conditions and this loss can be recovered by the proposed mitigation scheme.
ContributorsChang, Doo Hwang (Author) / Ozev, Sule (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2017
Description
In this work, an advanced simulation study of reliability in millimeter-wave (mm-wave) GaN Devices for power amplifier (PA) applications is performed by means of a particle-based full band Cellular Monte Carlo device simulator (CMC). The goal of the study is to obtain a systematic characterization of the performance of GaN devices operating in DC, small signal AC and large-signal radio-frequency (RF) conditions emphasizing on the microscopic properties that correlate to degradation of device performance such as generation of hot carriers, presence of material defects and self-heating effects. First, a review of concepts concerning GaN technology, devices, reliability mechanisms and PA design is presented in chapter 2. Then, in chapter 3 a study of non-idealities of AlGaN/GaN heterojunction diodes is performed, demonstrating that mole fraction variations and the presence of unintentional Schottky contacts are the main limiting factor for high current drive of the devices under study. Chapter 4 consists in a study of hot electron generation in GaN HEMTs, in terms of the accurate simulation of the electron energy distribution function (EDF) obtained under DC and RF operation, taking into account frequency and temperature variations. The calculated EDFs suggest that Class AB PAs operating at low frequency (10 GHz) are more robust to hot carrier effects than when operating under DC or high frequency RF (up to 40 GHz). Also, operation under Class A yields higher EDFs than Class AB indicating lower reliability. This study is followed in chapter 5 by the proposal of a novel π-Shaped gate contact for GaN HEMTs which effectively reduces the hot electron generation while preserving device performance. Finally, in chapter 6 the electro-thermal characterization of GaN-on-Si HEMTs is performed by means of an expanded CMC framework, where charge and heat transport are self-consistently coupled. After the electro-thermal model is validated to experimental data, the assessment of self-heating under lateral scaling is considered.
ContributorsLatorre Rey, Alvaro Daniel (Author) / Saraniti, Marco (Thesis advisor) / Kitchen, Jennifer (Committee member) / Goodnick, Stephen M (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2018
Description
The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon.
A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.
Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.
Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
ContributorsBensalem, Brahim (Author) / Aberle, James T. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Tirkas, Panayiotis A. (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
Description
The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator.
Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.
Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.
ContributorsMagod Ramakrishna, Raveesh (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Kitchen, Jennifer (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2018