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Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
Description
Increasing the conversion efficiencies of photovoltaic (PV) cells beyond the single junction theoretical limit is the driving force behind much of third generation solar cell research. Over the last half century, the experimental conversion efficiency of both single junction and tandem solar cells has plateaued as manufacturers and researchers have optimized various materials and structures. While existing materials and technologies have remarkably good conversion efficiencies, they are approaching their own limits. For example, tandem solar cells are currently well developed commercially but further improvements through increasing the number of junctions struggle with various issues related to material interfacial defects. Thus, there is a need for novel theoretical and experimental approaches leading to new third generation cell structures. Multiple exciton generation (MEG) and intermediate band (IB) solar cells have been proposed as third generation alternatives and theoretical modeling suggests they can surpass the detailed balance efficiency limits of single junction and tandem solar cells. MEG or IB solar cell has a variety of advantages enabling the use of low bandgap materials. Integrating MEG and IB with other cell types to make novel solar cells (such as MEG with tandem, IB with tandem or MEG with IB) potentially offers improvements by employing multi-physics effects in one device. This hybrid solar cell should improve the properties of conventional solar cells with a reduced number of junction, increased light-generated current and extended material selections. These multi-physics effects in hybrid solar cells can be achieved through the use of nanostructures taking advantage of the carrier confinement while using existing solar cell materials with excellent characteristics. This reduces the additional cost to develop novel materials and structures. In this dissertation, the author develops thermodynamic models for several novel types of solar cells and uses these models to optimize and compare their properties to those of existing PV cells. The results demonstrate multiple advantages from combining MEG and IB technology with existing solar cell structures.
ContributorsLee, Jongwon (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Bowden, Stuart (Committee member) / Roedel, Ronald (Committee member) / Goodnick, Stephen (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2014
Description
In the interest of expediting future pilot line start-ups for solar cell research, the development of Arizona State University's student-led pilot line at the Solar Power Laboratory is discussed extensively within this work. Several experiments and characterization techniques used to formulate and optimize a series of processes for fabricating diffused-junction, screen-printed silicon solar cells are expounded upon. An experiment is conducted in which the thickness of a PECVD deposited anti-reflection coating (ARC) is varied across several samples and modeled as a function of deposition time. Using this statistical model in tandem with reflectance measurements for each sample, the ARC thickness is optimized to increase light trapping in the solar cells. A response surface model (RSM) experiment is conducted in which 3 process parameters are varied on the PECVD tool for the deposition of the ARCs on several samples. A contactless photoconductance decay (PCD) tool is used to measure the dark saturation currents of these samples. A statistical analysis is performed using JMP in which optimum deposition parameters are found. A separate experiment shows an increase in the passivation quality of the a-SiNx:H ARCs deposited on the solar cells made on the line using these optimum parameters. A RSM experiment is used to optimize the printing process for a particular silver paste in a similar fashion, the results of which are confirmed by analyzing the series resistance of subsequent cells fabricated on the line. An in-depth explanation of a more advanced analysis using JMP and PCD measurements on the passivation quality of 3 aluminum back-surface fields (BSF) is given. From this experiment, a comparison of the means is conducted in order to choose the most effective BSF paste for cells fabricated on the line. An experiment is conducted in parallel which confirms the results via Voc measurements. It is shown that in a period of 11 months, the pilot line went from producing a top cell efficiency of 11.5% to 17.6%. Many of these methods used for the development of this pilot line are equally applicable to other cell structures, and can easily be applied to other solar cell pilot lines.
ContributorsPickett, Guy (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2014
Description
Silicon (Si) solar cells are the dominant technology used in the Photovoltaics industry. Field-effect passivation by means of electrostatic charges stored in an overlying insulator on a silicon solar cell has been proven to be a significantly efficient way to reduce effective surface recombination velocity and increase minority carrier lifetime. Silicon nitride (SiNx) films have been extensively used as passivation layers. The capability to store charges makes SiNx a promising material for excellent feild effect passivation. In this work, symmetrical Si/SiO2/SiNx stacks are developed to study the effect of charges in SiNx films. SiO2 films work as barrier layers. Corona charging technique showed the ability to inject charges into the SiNx films in a short time. Minority carrier lifetimes of the Czochralski (CZ) Si wafers increased significantly after either positive or negative charging. A fast and contactless method to characterize the charged overlying insulators on Si wafer through lifetime measurements is proposed and studied in this work, to overcome the drawbacks of capacitance-voltage (CV) measurements such as time consuming, induction of contanmination and hysteresis effect, etc. Analytical simulations showed behaviors of inverse lifetime (Auger corrected) vs. minority carrier density curves depend on insulator charge densities (Nf). From the curve behavior, the Si surface condition and region of Nf can be estimated. When the silicon surface is at high strong inversion or high accumulation, insulator charge density (Nf) or surface recombination velocity parameters (Sn0 and Sp0) can be determined from the slope of inverse lifetime curves, if the other variable is known. If Sn0 and Sp0 are unknown, Nf values of different samples can be compared as long as all have similar Sn0 and Sp0 values. Using the saturation current density (J0) and intercept fit extracted from the lifetime measurement, the bulk lifetime can be calculated. Therefore, this method is feasible and promising for charged insulator characterization.
ContributorsYang, Qun (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2014
Description
Crystalline silicon has a relatively low absorption coefficient, and therefore, in thin silicon solar cells surface texturization plays a vital role in enhancing light absorption. Texturization is needed to increase the path length of light through the active absorbing layer. The most popular choice for surface texturization of crystalline silicon is the anisotropic wet-etching that yields pyramid-like structures. These structures have shown to be both simple to fabricate and efficient in increasing the path length; they outperform most competing surface texture. Recent studies have also shown these pyramid-like structures are not truly square-based 54.7 degree pyramids but have variable base angles and shapes. In addition, their distribution is not regular -- as is often assumed in optical models -- but random. For accurate prediction of performance of silicon solar cells, it is important to investigate the true nature of the surface texture that is achieved using anisotropic wet-etching, and its impact on light trapping. We have used atomic force microscopy (AFM) to characterize the surface topology by obtaining actual height maps that serve as input to ray tracing software. The height map also yields the base angle distribution, which is compared to the base angle distribution obtained by analyzing the angular reflectance distribution measured by spectrophotometer to validate the shape of the structures. Further validation of the measured AFM maps is done by performing pyramid density comparison with SEM micrograph of the texture. Last method employed for validation is Focused Ion Beam (FIB) that is used to mill the long section of pyramids to reveal their profile and so from that the base angle distribution is measured. After that the measured map is modified and the maps are generated keeping the positional randomness (the positions of pyramids) and height of the pyramids the same, but changing their base angles. In the end a ray tracing software is used to compare the actual measured AFM map and also the modified maps using their reflectance, transmittance, angular scattering and most importantly path length enhancement, absorbance and short circuit current with lambertian scatterer.
ContributorsManzoor, Salman (Author) / Holman, Zachary (Thesis advisor) / Goodnick, Stephen (Committee member) / Bowden, Stuart (Committee member) / Arizona State University (Publisher)
Created2014
Description
Due to the ever increasing relevance of finer machining control as well as necessary reduction in material waste by large area semiconductor device manufacturers, a novel bulk laser machining method was investigated. Because the cost of silicon and sapphire substrates are limiting to the reduction in cost of devices in both the light emitting diode (LED) and solar industries, and the present substrate wafering process results in >50% waste, the need for an improved ingot wafering technique exists.
The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties of band-gapped materials to achieve bulk (subsurface) morphological changes in matter using highly focused laser light. A method and tool was designed and developed to form controlled damage regions in the bulk of a crystalline sapphire wafer leaving the surfaces unaltered. The controllability of the subsurface damage geometry was investigated, and the effect of numerical aperture of the focusing optic, energy per pulse, wavelength, and number of pulses was characterized for a nanosecond pulse length variable wavelength Nd:YAG OPO laser.
A novel model was developed to describe the geometry of laser induced morphological changes in the bulk of semiconducting materials for nanosecond pulse lengths. The beam propagation aspect of the model was based on ray-optics, and the full Keldysh multiphoton photoionization theory in conjuncture with Thornber's and Drude's models for impact ionization were used to describe high fluence laser light absorption and carrier generation ultimately resulting in permanent material modification though strong electron-plasma absorption and plasma melting. Although the electron-plasma description of laser damage formation is usually reserved for extremely short laser pulses (<20 ps), this work shows that it can be adapted for longer pulses of up to tens of nanoseconds.
In addition to a model describing damage formation of sub-band gap energy laser light in semiconducting and transparent crystalline dielectrics, a novel nanosecond laser process was successfully realized to generate a thin plane of damage in the bulk of sapphire wafers. This was accomplished using high numerical aperture optics, a variable wavelength nanosecond laser source, and three-dimensional motorized precision stage control.
The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties of band-gapped materials to achieve bulk (subsurface) morphological changes in matter using highly focused laser light. A method and tool was designed and developed to form controlled damage regions in the bulk of a crystalline sapphire wafer leaving the surfaces unaltered. The controllability of the subsurface damage geometry was investigated, and the effect of numerical aperture of the focusing optic, energy per pulse, wavelength, and number of pulses was characterized for a nanosecond pulse length variable wavelength Nd:YAG OPO laser.
A novel model was developed to describe the geometry of laser induced morphological changes in the bulk of semiconducting materials for nanosecond pulse lengths. The beam propagation aspect of the model was based on ray-optics, and the full Keldysh multiphoton photoionization theory in conjuncture with Thornber's and Drude's models for impact ionization were used to describe high fluence laser light absorption and carrier generation ultimately resulting in permanent material modification though strong electron-plasma absorption and plasma melting. Although the electron-plasma description of laser damage formation is usually reserved for extremely short laser pulses (<20 ps), this work shows that it can be adapted for longer pulses of up to tens of nanoseconds.
In addition to a model describing damage formation of sub-band gap energy laser light in semiconducting and transparent crystalline dielectrics, a novel nanosecond laser process was successfully realized to generate a thin plane of damage in the bulk of sapphire wafers. This was accomplished using high numerical aperture optics, a variable wavelength nanosecond laser source, and three-dimensional motorized precision stage control.
ContributorsLeBeau, James (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Bertoni, Mariana (Committee member) / Cotter, Jeffrey (Committee member) / Arizona State University (Publisher)
Created2015
Description
The aim of this thesis research is the development of thin silicon heterojunction solar cells with high open circuit voltage (Voc). Heterojunction solar cells are higher in efficiency than diffused junction c-Si solar cells, and they are less vulnerable to light degradation. Furthermore, the low temperature processing of heterojunction cells favour a decrease in production costs and improve cell performance at the same time. Since about 30 % of the module cost is a result of substrate cost, thin solar cells are of economic advantage than their thicker counterparts. This lead to the research for development of thin heterojunction solar cells. For high cell efficiencies and performance, it is important for cells to have a high operating voltage and Voc. Development of heterojunction cells with high Voc required a stable and repeatable baseline process on which further improvements could be made. Therefore a baseline process for heterojunction solar cells was developed and demonstrated as a pilot line at the Solar Power Lab at ASU. All the processes involved in fabrication of cells with the baseline process were optimized to have a stable and repeatable process. The cells produced with the baseline process were 19-20% efficient. The baseline process was further used as a backbone to improve and develop thin cells with even higher Voc. The process recipe was optimized with an aim to explore the limits of Voc that could be achieved with this structure on a much thinner substrate than used for the baseline process. A record Voc greater than 760mV was recorded at SPL using Suns-Voc tester on a 50 microns thick heterojunction cell without metallization. Furthermore, Voc of 754.2 mV was measured on a 50 microns thick cell with metallization by National Renewable Energy Laboratory (NREL), which is a record for Voc for heterojunction cells with metallization. High Voc corresponds to high cell efficiency and therefore, higher module voltage and power with using the same number of cells as compared to other c-Si solar cells.
ContributorsMonga, Tanmay (Author) / Bowden, Stuart (Thesis advisor) / Dauksher, William (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2015
Description
Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. The most commonly alleged causes of instability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. As all defects, intrinsic or extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and changing ionization state with excess free carriers. Such complexity of interactions in CdTe makes understanding of temporal changes in device performance even more challenging. The goal of the work in this dissertation is, thus, to eliminate the ambiguity between the observed performance changes under stress and their physical root cause by enabling a depth of modeling that takes account of diffusion and drift at the atomistic level coupled to the electronic subsystem responsible for a PV device’s function. The 1D Unified Solver, developed as part of this effort, enables us to analyze PV devices at a greater depth.
In this dissertation, the implementation of a drift-diffusion model defect migration simulator, development of an implicit reaction scheme for total mass conservation, and a couple of other numerical schemes to improve the overall flexibility and robustness of this coupled Unified Solver is discussed. Preliminary results on Cu (with or without Cl-treatment) annealing simulations in both single-crystal CdTe wafer and poly-crystalline CdTe devices show promising agreement to experimental findings, providing a new perspective in the research of improving doping concentration hence the open-circuit voltage of CdTe technology. Furthermore, on the reliability side, in agreement of previous experimental reports, simulation results suggest possibility of Cu depletion in short-circuited cells stressed at elevated temperature. The developed solver also successfully demonstrated that mobile donor migration can be used to explain solar cell performance changes under different stress conditions.
In this dissertation, the implementation of a drift-diffusion model defect migration simulator, development of an implicit reaction scheme for total mass conservation, and a couple of other numerical schemes to improve the overall flexibility and robustness of this coupled Unified Solver is discussed. Preliminary results on Cu (with or without Cl-treatment) annealing simulations in both single-crystal CdTe wafer and poly-crystalline CdTe devices show promising agreement to experimental findings, providing a new perspective in the research of improving doping concentration hence the open-circuit voltage of CdTe technology. Furthermore, on the reliability side, in agreement of previous experimental reports, simulation results suggest possibility of Cu depletion in short-circuited cells stressed at elevated temperature. The developed solver also successfully demonstrated that mobile donor migration can be used to explain solar cell performance changes under different stress conditions.
ContributorsGuo, Da (Author) / Vasileska, Dragica (Thesis advisor) / Sankin, Igor (Committee member) / Goodnick, Stephen (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2017
Description
This comprehensive library of photovoltaic functions (PVSimLib) is an attempt to help the photovoltaics community to solve one of its long-lasting problems, the lack of a simple, flexible and comprehensive tool that can be used for photovoltaic calculations. The library contains a collection of useful functions and detailed examples that will show the user how to take advantage of the resources present in this library. The results will show how in combination with other Python libraries (Matplotlib), this library becomes a powerful tool for anyone involved in solar power.
ContributorsReguera, Pedro (Author) / Honsberg, Christiana (Thesis advisor) / King, Richard (Committee member) / Bowden, Stuart (Committee member) / Arizona State University (Publisher)
Created2018