Distributed inference has applications in fields as varied as source localization, evaluation of network quality, and remote monitoring of wildlife habitats. In this dissertation, distributed inference algorithms over multiple-access channels are considered. The performance of these algorithms and the effects of wireless communication channels on the performance are studied. In a first class of problems, distributed inference over fading Gaussian multiple-access channels with amplify-and-forward is considered. Sensors observe a phenomenon and transmit their observations using the amplify-and-forward scheme to a fusion center (FC). Distributed estimation is considered with a single antenna at the FC, where the performance is evaluated using the asymptotic variance of the estimator. The loss in performance due to varying assumptions on the limited amounts of channel information at the sensors is quantified. With multiple antennas at the FC, a distributed detection problem is also considered, where the error exponent is used to evaluate performance. It is shown that for zero-mean channels between the sensors and the FC when there is no channel information at the sensors, arbitrarily large gains in the error exponent can be obtained with sufficient increase in the number of antennas at the FC. In stark contrast, when there is channel information at the sensors, the gain in error exponent due to having multiple antennas at the FC is shown to be no more than a factor of 8/π for Rayleigh fading channels between the sensors and the FC, independent of the number of antennas at the FC, or correlation among noise samples across sensors. In a second class of problems, sensor observations are transmitted to the FC using constant-modulus phase modulation over Gaussian multiple-access-channels. The phase modulation scheme allows for constant transmit power and estimation of moments other than the mean with a single transmission from the sensors. Estimators are developed for the mean, variance and signal-to-noise ratio (SNR) of the sensor observations. The performance of these estimators is studied for different distributions of the observations. It is proved that the estimator of the mean is asymptotically efficient if and only if the distribution of the sensor observations is Gaussian.

Graphene, a one atomic thick planar sheet of carbon atoms, has a zero gap band structure with a linear dispersion relation. This unique property makes graphene a favorite for physicists and engineers, who are trying to understand the mechanism of charge transport in graphene and using it as channel material for field effect transistor (FET) beyond silicon. Therefore, an in-depth exploring of these electrical properties of graphene is urgent, which is the purpose of this dissertation. In this dissertation, the charge transport and quantum capacitance of graphene were studied. Firstly, the transport properties of back-gated graphene transistor covering by high dielectric medium were systematically studied. The gate efficiency increased by up to two orders of magnitude in the presence of a high top dielectric medium, but the mobility did not change significantly. The results strongly suggested that the previously reported top dielectric medium-induced charge transport properties of graphene FETs were possibly due to the increase of gate capacitance, rather than enhancement of carrier mobility. Secondly, a direct measurement of quantum capacitance of graphene was performed. The quantum capacitance displayed a non-zero minimum at the Dirac point and a linear increase on both sides of the minimum with relatively small slopes. The findings - which were not predicted by theory for ideal graphene - suggested that scattering from charged impurities also influences the quantum capacitance. The capacitances in aqueous solutions at different ionic concentrations were also measured, which strongly suggested that the longstanding puzzle about the interfacial capacitance in carbon-based electrodes had a quantum origin. Finally, the transport and quantum capacitance of epitaxial graphene were studied simultaneously, the quantum capacitance of epitaxial graphene was extracted, which was similar to that of exfoliated graphene near the Dirac Point, but exhibited a large sub-linear behavior at high carrier density. The self-consistent theory was found to provide a reasonable description of the transport data of the epitaxial graphene device, but a more complete theory was needed to explain both the transport and quantum capacitance data.

ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses a voltage controlled oscillator (VCO) operating at a fractional multiple of the desired output signal. The proposed topology is different from conventional subharmonic mixing in that the oscillator phase generation circuitry usually required for such a circuit is unnecessary. Analysis and simulations are performed on the proposed mixer circuit in an IBM 90 nm RF process on a 1.2 V supply. A typical RF transmitter system is considered in determining the block requirements needed for the mixer to meet the IEEE 802.11ad 60 GHz Draft Physical Layer Specification. The proposed circuit has a conversion loss of 21 dB at 60 GHz with a 5 dBm LO power at 20 GHz. Input-referred third-order intercept point (IIP3) is 2.93 dBm. The gain and linearity of the proposed mixer are sufficient for Orthogonal Frequency Division Multiplexing (OFDM) modulation at 60 GHz with a transmitted data rate of over 4 Gbps.

Ethernet switching is provided to interconnect multiple Ethernets for the exchange of Ethernet data frames. Most Ethernet switches require data buffering and Ethernet signal regeneration at the switch which incur the problems of substantial signal processing, power consumption, and transmission delay. To solve these problems, a cross bar architecture switching system for 10GBASE-T Ethernet is proposed in this thesis. The switching system is considered as the first step of implementing a multi-stage interconnection network to achieve Terabit or Petabit switching. By routing customized headers in capsulated Ethernet frames in an out-of-band control method, the proposed switching system would transmit the original Ethernet frames with little processing, thereby makes the system appear as a simple physical medium for different hosts. The switching system is designed and performed by using CMOS technology.

An advantage of doubly fed induction generators (DFIGs) as compared to conventional fixed speed wind turbine generators is higher efficiency. This higher efficiency is achieved due to the ability of the DFIG to operate near its optimal turbine efficiency over a wider range of wind speeds through variable speed operation. This is achieved through the application of a back-to-back converter that tightly controls the rotor current and allows for asynchronous operation. In doing so, however, the power electronic converter effectively decouples the inertia of the turbine from the system. Hence, with the increase in penetration of DFIG based wind farms, the effective inertia of the system will be reduced. With this assertion, the present study is aimed at identifying the systematic approach to pinpoint the impact of increased penetration of DFIGs on a large realistic system. The techniques proposed in this work are tested on a large test system representing the Midwestern portion of the U.S. Interconnection. The electromechanical modes that are both detrimentally and beneficially affected by the change in inertia are identified. The combination of small-signal stability analysis coupled with the large disturbance analysis of exciting the mode identified is found to provide a detailed picture of the impact on the system. The work is extended to develop suitable control strategies to mitigate the impact of significant DFIG penetration on a large power system. Supplementary control is developed for the DFIG power converters such that the effective inertia contributed by these wind generators to the system is increased. Results obtained on the large realistic power system indicate that the frequency nadir following a large power impact is effectively improved with the proposed control strategy. The proposed control is also validated against sudden wind speed changes in the form of wind gusts and wind ramps. The beneficial impact in terms of damping power system oscillations is observed, which is validated by eigenvalue analysis. Another control mechanism is developed aiming at designing the power system stabilizer (PSS) for a DFIG similar to the PSS of synchronous machines. Although both the supplementary control strategies serve the purpose of improving the damping of the mode with detrimental impact, better damping performance is observed when the DFIG is equipped with both the controllers.

Market acceptability of distributed energy resource (DER) technologies and the gradual and consistent increase in their depth of penetration have generated significant interest over the past few years. In particular, in Arizona and several other states there has been a substantial in-crease in distributed photovoltaic (PV) generation interfaced to the power distribution systems, and is expected to continue to grow at a significant rate. This has made integration, control and optimal operation of DER units a main area of focus in the design and operation of distribution systems. Grid-connected, distributed PV covers a wide range of power levels ranging from small, single phase residential roof-top systems to large three-phase, multi-megawatt systems. The focus of this work is on analyzing large, three-phase systems, with the power distribution system of the Arizona State University (ASU) Tempe campus used as the test bed for analysis and simulation. The Tempe campus of ASU has presently 4.5 MW of installed PV capacity, with another 4.5 MW expected to be added by 2011, which will represent about 22% of PV penetration. The PV systems are interfaced to the grid invariably by a power electronic inverter. Many of the important characteristics of the PV generation are influenced by the design and performance of the inverter, and hence suitable models of the inverter are needed to analyze PV systems. Several models of distributed generation (DG), including switching and average models, suitable for different study objectives, and different control modes of the inverter have been described in this thesis. A critical function of the inverters is to quickly detect and eliminate unintentional islands during grid failure. In this thesis, many active anti-islanding techniques with voltage and frequency positive feedback have been studied. Effectiveness of these techniques in terms of the tripping times specified in IEEE Std. 1547 for interconnecting distributed resources with electric power systems has been analyzed. The impact of distributed PV on the voltage profile of a distribution system has been ana-lyzed with ASU system as the test bed using power systems analysis tools namely PowerWorld and CYMDIST. The present inverters complying with IEEE 1547 do not regulate the system vol-tage. However, the future inverters especially at higher power levels are expected to perform sev-eral grid support functions including voltage regulation and reactive power support. Hence, the impact of inverters with the reactive power support capabilities is also analyzed. Various test sce-narios corresponding to different grid conditions are simulated and it is shown that distributed PV improves the voltage profile of the system. The improvements are more significant when the PV generators are capable of reactive power support. Detailed short circuit analyses are also per-formed on the system, and the impact of distributed PV on the fault current magnitude, with and without reactive power injection, have been studied.

The RADiation sensitive Field Effect Transistor (RADFET) has been conventionally used to measure radiation dose levels. These dose sensors are calibrated in such a way that a shift in threshold voltage, due to a build-up of oxide-trapped charge, can be used to estimate the radiation dose. In order to estimate the radiation dose level using RADFET, a wired readout circuit is necessary. Using the same principle of oxide-trapped charge build-up, but by monitoring the change in capacitance instead of threshold voltage, a wireless dose sensor can be developed. This RADiation sensitive CAPacitor (RADCAP) mounted on a resonant patch antenna can then become a wireless dose sensor. From the resonant frequency, the capacitance can be extracted which can be mapped back to estimate the radiation dose level. The capacitor acts as both radiation dose sensor and resonator element in the passive antenna loop. Since the MOS capacitor is used in passive state, characterizing various parameters that affect the radiation sensitivity is essential. Oxide processing technique, choice of insulator material, and thickness of the insulator, critically affect the dose response of the sensor. A thicker oxide improves the radiation sensitivity but reduces the dynamic range of dose levels for which the sensor can be used. The oxide processing scheme primarily determines the interface trap charge and oxide-trapped charge development; controlling this parameter is critical to building a better dose sensor.

Photovoltaic (PV) modules appear to have three classifications of failure: Infant mortality, normal-life failure, and end-of-life failure. Little is known of the end-of-life failures experienced by PV modules due to their inherent longevity. Accelerated Life Testing (ALT) has been at the crux of this lifespan prediction; however, without naturally failing modules an accurate acceleration factor cannot be determined for use in ALT. By observing modules that have been aged in the field, a comparison can be made with modules undergoing accelerated testing. In this study an investigation on about 1900 aged (10-17 years) grid-tied PV modules installed in the desert climatic condition of Arizona was undertaken. The investigation was comprised of a check sheet that documented any visual defects and their severity, infrared (IR) scanning, and current-voltage (I-V) curve measurements. After data was collected on modules, an analysis was performed to classify the failure modes and to determine the annual performance degradation rates.

Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse width modulated (PWM) signals switching from 0V to approximately 10V. Advanced CMOS microcontrollers are ideal for generating the PWM signals but are limited in output voltage due to their low breakdown voltage within the CMOS drive circuits. As a result, an intermediate buffer stage is required between the CMOS circuitry and the JFET. In this thesis, a discrete silicon-on-insulator (SOI) metal semiconductor field effect transistor (MESFET) was used to drive the gate of a SiC power JFET switching a 120V RMS AC supply into a 30Ω load. The wide operating temperature range and high breakdown voltage of up to 50V make the SOI MESFET ideal for power electronics in extreme environments. Characteristic curves for the MESFET were measured up to 250&degC.; To drive the JFET, the MESFET was DC biased and then driven by a 1.2V square wave PWM signal to switch the JFET gate from 0 to 10V at frequencies up to 20kHz. For simplicity, the 1.2V PWM square wave signal was provided by a 555 timer. The JFET gate drive circuit was measured at high temperatures up to 235&degC.; The circuit operated well at the high temperatures without any damage to the SOI MESFET or SiC JFET. The drive current of the JFET was limited by the duty cycle range of the 555 timer used. The SiC JFET drain current decreased with increased temperature. Due to the easy integration of MESFETs into SOI CMOS processes, MESFETs can be fabricated alongside MOSFETs without any changes in the process flow. This thesis demonstrates the feasibility of integrating a MESFET with CMOS PWM circuitry for a completely integrated SiC driver thus eliminating the need for the intermediate buffer stage.

A dual-channel directional digital hearing aid (DHA) front end using Micro Electro Mechanical System (MEMS) microphones and an adaptive-power analog processing signal chain is presented. The analog front end consists of a double differential amplifier (DDA) based capacitance to voltage conversion circuit, 40dB variable gain amplifier (VGA) and a continuous time sigma delta analog to digital converter (CT - ΣΔ ADC). Adaptive power scaling of the 4th order CT - ΣΔ achieves 68dB SNR at 120μW, which can be scaled down to 61dB SNR at 67μW. This power saving will increse the battery life of the DHA.