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Description
The origins of carrier mobility (μe) were thoroughly investigated in hydrogenated indium oxide (IO:H) and zinc-tin oxide (ZTO) transparent conducting oxide (TCO) thin films. A carrier transport model was developed for IO:H which studied the effects of ionized impurity scattering, polar optical phonon scattering, and grain boundary scattering. Ionized impurity scattering dominated at temperatures below ~240 K. A reduction in scattering charge Z from +2 to +1 as atomic %H increased from ~3 atomic %H to ~5 atomic %H allowed μe to attain >100 cm^2/Vs at ~5 atomic %H.
In highly hydrogenated IO:H, ne significantly decreased as temperature increased from 5 K to 140 K. To probe this unusual behavior, samples were illuminated, then ne, surface work function (WF), and spatially resolved microscopic current mapping were measured and tracked. Large increases in ne and corresponding decreases in WF were observed---these both exhibited slow reversions toward pre-illumination values over 6-12 days. A hydrogen-related defect was proposed as source of the photoexcitation, while a lattice defect diffusion mechanism causes the extended decay. Both arise from an under-coordination of the In.
An enhancement of μe was observed with increasing amorphous fraction in IO:H. An increase in population of corner- and edge-sharing polyhedra consisting of metal cations and oxygen anions is thought to be the origin. This indicates some measure of medium-range order in the amorphous structure, and gives rise to a general principle dictating μe in TCOs---even amorphous TCOs. Testing this principle resulted in observing an enhancement of μe up to 35 cm^2/Vs in amorphous ZTO (a-ZTO), one of the highest reported a-ZTO μe values (at ne > 10^19 cm^-3) to date. These results highlight the role of local distortions and cation coordination in determining the microscopic origins of carrier generation and transport. In addition, the strong likelihood of under-coordination of one cation species leading to high carrier concentrations is proposed. This diverges from the historical indictment of oxygen vacancies controlling carrier population in crystalline oxides, which by definition cannot occur in amorphous systems, and provides a framework to discuss key structural descriptors in these disordered phase materials.
In highly hydrogenated IO:H, ne significantly decreased as temperature increased from 5 K to 140 K. To probe this unusual behavior, samples were illuminated, then ne, surface work function (WF), and spatially resolved microscopic current mapping were measured and tracked. Large increases in ne and corresponding decreases in WF were observed---these both exhibited slow reversions toward pre-illumination values over 6-12 days. A hydrogen-related defect was proposed as source of the photoexcitation, while a lattice defect diffusion mechanism causes the extended decay. Both arise from an under-coordination of the In.
An enhancement of μe was observed with increasing amorphous fraction in IO:H. An increase in population of corner- and edge-sharing polyhedra consisting of metal cations and oxygen anions is thought to be the origin. This indicates some measure of medium-range order in the amorphous structure, and gives rise to a general principle dictating μe in TCOs---even amorphous TCOs. Testing this principle resulted in observing an enhancement of μe up to 35 cm^2/Vs in amorphous ZTO (a-ZTO), one of the highest reported a-ZTO μe values (at ne > 10^19 cm^-3) to date. These results highlight the role of local distortions and cation coordination in determining the microscopic origins of carrier generation and transport. In addition, the strong likelihood of under-coordination of one cation species leading to high carrier concentrations is proposed. This diverges from the historical indictment of oxygen vacancies controlling carrier population in crystalline oxides, which by definition cannot occur in amorphous systems, and provides a framework to discuss key structural descriptors in these disordered phase materials.
ContributorsHusein, Sebastian S.T. (Author) / Bertoni, Mariana I. (Thesis advisor) / Stuckelberger, Michael (Committee member) / Holman, Zachary C. (Committee member) / Crozier, Peter (Committee member) / Arizona State University (Publisher)
Created2020
Description
In the current photovoltaic (PV) industry, the O&M (operations and maintenance) personnel in the field primarily utilize three approaches to identify the underperforming or defective modules in a string: i) EL (electroluminescence) imaging of all the modules in the string; ii) IR (infrared) thermal imaging of all the modules in the string; and, iii) current-voltage (I-V) curve tracing of all the modules in the string. In the first and second approaches, the EL images are used to detect the modules with broken cells, and the IR images are used to detect the modules with hotspot cells, respectively. These two methods may identify the modules with defective cells only semi-qualitatively, but not accurately and quantitatively. The third method, I-V curve tracing, is a quantitative method to identify the underperforming modules in a string, but it is an extremely time consuming, labor-intensive, and highly ambient conditions dependent method. Since the I-V curves of individual modules in a string are obtained by disconnecting them individually at different irradiance levels, module operating temperatures, angle of incidences (AOI) and air-masses/spectra, all these measured curves are required to be translated to a single reporting condition (SRC) of a single irradiance, single temperature, single AOI and single spectrum. These translations are not only time consuming but are also prone to inaccuracy due to inherent issues in the translation models. Therefore, the current challenges in using the traditional I-V tracers are related to: i) obtaining I-V curves simultaneously of all the modules and substrings in a string at a single irradiance, operating temperature, irradiance spectrum and angle of incidence due to changing weather parameters and sun positions during the measurements, ii) safety of field personnel when disconnecting and reconnecting of cables in high voltage systems (especially field aged connectors), and iii) enormous time and hardship for the test personnel in harsh outdoor climatic conditions. In this thesis work, a non-contact I-V (NCIV) curve tracing tool has been integrated and implemented to address the above mentioned three challenges of the traditional I-V tracers.
This work compares I-V curves obtained using a traditional I-V curve tracer with the I-V curves obtained using a NCIV curve tracer for the string, substring and individual modules of crystalline silicon (c-Si) and cadmium telluride (CdTe) technologies. The NCIV curve tracer equipment used in this study was integrated using three commercially available components: non-contact voltmeters (NCV) with voltage probes to measure the voltages of substrings/modules in a string, a hall sensor to measure the string current and a DAS (data acquisition system) for simultaneous collection of the voltage data obtained from the NCVs and the current data obtained from the hall sensor. This study demonstrates the concept and accuracy of the NCIV curve tracer by comparing the I-V curves obtained using a traditional capacitor-based tracer and the NCIV curve tracer in a three-module string of c-Si modules and of CdTe modules under natural sunlight with uniform light conditions on all the modules in the string and with partially shading one or more of the modules in the string to simulate and quantitatively detect the underperforming module(s) in a string.
This work compares I-V curves obtained using a traditional I-V curve tracer with the I-V curves obtained using a NCIV curve tracer for the string, substring and individual modules of crystalline silicon (c-Si) and cadmium telluride (CdTe) technologies. The NCIV curve tracer equipment used in this study was integrated using three commercially available components: non-contact voltmeters (NCV) with voltage probes to measure the voltages of substrings/modules in a string, a hall sensor to measure the string current and a DAS (data acquisition system) for simultaneous collection of the voltage data obtained from the NCVs and the current data obtained from the hall sensor. This study demonstrates the concept and accuracy of the NCIV curve tracer by comparing the I-V curves obtained using a traditional capacitor-based tracer and the NCIV curve tracer in a three-module string of c-Si modules and of CdTe modules under natural sunlight with uniform light conditions on all the modules in the string and with partially shading one or more of the modules in the string to simulate and quantitatively detect the underperforming module(s) in a string.
ContributorsMurali, Sanjay (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2020
Description
Bio-modification of asphalt binder brings significant benefits in terms of increasing sustainable and environmental practices, stabilizing prices, and decreasing costs. However, bio-modified asphalt binders have shown varying performance regarding susceptibility to moisture damage; some bio-oil modifiers significantly increase asphalt binder's susceptibility to moisture damage. This variability in performance is largely due to the large number of bio-masses available for use as sources of bio-oil, as well as the type of processing procedure followed in converting the bio-mass into a bio-oil for modifying asphalt binder. Therefore, there is a need for a method of properly evaluating the potential impact of a bio-oil modifier for asphalt binder on the overall performance of asphalt pavement, in order to properly distinguish whether a particular bio-oil modifier increases or decreases the moisture susceptibility of asphalt binder. Therefore, the goal of this study is a multi-scale investigation of bio-oils with known chemical compositions to determine if there is a correlation between a fundamental property of a bio-oil and the resulting increase or decrease in moisture susceptibility of a binder when it is modified with the bio-oil. For instance, it was found that polarizability of asphalt constituents can be a promising indicator of moisture susceptibility of bitumen. This study will also evaluate the linkage of the fundamental property to newly developed binder-level test methods. It was found that moisture-induced shear thinning of bitumen containing glass beads can differentiate moisture susceptible bitumen samples. Based on the knowledge determined, alternative methods of reducing the moisture susceptibility of asphalt pavement will also be evaluated. It was shown that accumulation of acidic compounds at the interface of bitumen and aggregate could promote moisture damage. It was further found that detracting acidic compounds from the interface could be done by either of neutralizing active site of stone aggregate to reduce affinity for acids or by arresting acidic compounds using active mineral filler. The study results showed there is a strong relation between composition of bitumen and its susceptibility to moisture. This in turn emphasize the importance of integrating knowledge of surface chemistry and bitumen composition into the pavement design and evaluation.
ContributorsOldham, Daniel Joshua (Author) / Fini, Elham F (Thesis advisor) / Kaloush, Kamil (Committee member) / Deng, Shuguang (Committee member) / Mallick, Rajib B (Committee member) / Louie, Stacey M (Committee member) / Parast, Mahour M (Committee member) / Arizona State University (Publisher)
Created2020
Description
Metal-organic frameworks have made a feature in the cutting-edge technology with a wide variety of applications because they are the new material candidate as adsorbent or membrane with high surface area, various pore sizes, and highly tunable framework functionality properties. The emergence of two-dimensional (2D) metal-organic frameworks has surged an outburst of intense research to understand the feasible synthesis and exciting material properties of these class of materials. Despite their potential, studies to date show that it is extremely challenging to synthesize and manufacture 2D MOF at large scales with ultimate control over crystallinity and thickness.
The field of research to date has produced various synthesis routes which can further be used to design 2D materials with a range of organic ligands and metal linkers. This thesis seeks to extend these design rules to demonstrate the competitive growth of two- dimensional (2D) metal-organic frameworks(MOF) and their alloys to predict which ligands and metals can be combined, study the intercalation of Bromine in these frameworks and their alloys which leads to the discovery of reduced band gap in the layered MOF alloy.
In this study it has been shown that the key factor in achieving layered 2D MOFs and it relies on the use of carefully engineered ligands to terminate the out-of-plane sites on metal clusters thereby eliminating strong interlayer hydrogen bond formation.
The major contribution of pyridine is to replace interlayer hydrogen bonding or other weak chemical bonds. Overall results establish an entirely new synthesis method for producing highly crystalline and scalable 2D MOFs and their alloys. Bromine intercalation merits future studies on band gap engineering in these layered materials.
The field of research to date has produced various synthesis routes which can further be used to design 2D materials with a range of organic ligands and metal linkers. This thesis seeks to extend these design rules to demonstrate the competitive growth of two- dimensional (2D) metal-organic frameworks(MOF) and their alloys to predict which ligands and metals can be combined, study the intercalation of Bromine in these frameworks and their alloys which leads to the discovery of reduced band gap in the layered MOF alloy.
In this study it has been shown that the key factor in achieving layered 2D MOFs and it relies on the use of carefully engineered ligands to terminate the out-of-plane sites on metal clusters thereby eliminating strong interlayer hydrogen bond formation.
The major contribution of pyridine is to replace interlayer hydrogen bonding or other weak chemical bonds. Overall results establish an entirely new synthesis method for producing highly crystalline and scalable 2D MOFs and their alloys. Bromine intercalation merits future studies on band gap engineering in these layered materials.
ContributorsVijay, Shiljashree (Author) / Tongay, Sefaattin (Thesis advisor) / Green, Matthew D (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2020
Description
This dissertation focuses on the structural and optical properties of III-V semiconductor materials. Transmission electron microscopy and atomic force microscopy are used to study at the nanometer scale, the structural properties of defects, interfaces, and surfaces. A correlation with optical properties has been performed using cathodoluminescence.
The dissertation consists of four parts. The first part focuses on InAs quantum dots (QDs) embedded in a GaInP matrix for applications into intermediate band solar cells. The CuPt ordering of the group-III elements in Ga0.5In0.5P has been found to vary during growth of InAs QDs capped with GaAs. The degree of ordering depends on the deposition time of the QDs and on the thickness of the capping layer. The results indicate that disordered GaInP occurs in the presence of excess indium at the growth front.
The second part focuses on the effects of low-angle off-axis GaN substrate orientation and growth rates on the surface morphology of Mg-doped GaN epilayers. Mg doping produces periodic steps and a tendency to cover pinholes associated with threading dislocations. With increasing miscut angle, the steps are observed to increase in height from single to double basal planes, with the coexistence of surfaces with different inclinations. The structural properties are correlated with the electronic properties of GaN epilayers, indicating step bunching reduces the p-type doping efficiency. It is also found that the slower growth rates can enhance step-flow growth and suppress step bunching.
The third part focuses on the effects of inductively-coupled plasma etching on GaN epilayers. The results show that ion energy rather than ion density plays the key role in the etching process, in terms of structural and optical properties of the GaN films. Cathodoluminescence depth-profiling indicates that the band-edge emission of etched GaN is significantly quenched.
The fourth part focuses on growth of Mg-doped GaN on trench patterns. Anisotropic growth and nonuniform acceptor incorporation in p-GaN films have been observed. The results indicate that growth along the sidewall has a faster growth rate and therefore a lower acceptor incorporation efficiency, compared to the region grown on the basal plane.
The dissertation consists of four parts. The first part focuses on InAs quantum dots (QDs) embedded in a GaInP matrix for applications into intermediate band solar cells. The CuPt ordering of the group-III elements in Ga0.5In0.5P has been found to vary during growth of InAs QDs capped with GaAs. The degree of ordering depends on the deposition time of the QDs and on the thickness of the capping layer. The results indicate that disordered GaInP occurs in the presence of excess indium at the growth front.
The second part focuses on the effects of low-angle off-axis GaN substrate orientation and growth rates on the surface morphology of Mg-doped GaN epilayers. Mg doping produces periodic steps and a tendency to cover pinholes associated with threading dislocations. With increasing miscut angle, the steps are observed to increase in height from single to double basal planes, with the coexistence of surfaces with different inclinations. The structural properties are correlated with the electronic properties of GaN epilayers, indicating step bunching reduces the p-type doping efficiency. It is also found that the slower growth rates can enhance step-flow growth and suppress step bunching.
The third part focuses on the effects of inductively-coupled plasma etching on GaN epilayers. The results show that ion energy rather than ion density plays the key role in the etching process, in terms of structural and optical properties of the GaN films. Cathodoluminescence depth-profiling indicates that the band-edge emission of etched GaN is significantly quenched.
The fourth part focuses on growth of Mg-doped GaN on trench patterns. Anisotropic growth and nonuniform acceptor incorporation in p-GaN films have been observed. The results indicate that growth along the sidewall has a faster growth rate and therefore a lower acceptor incorporation efficiency, compared to the region grown on the basal plane.
ContributorsSU, PO-YI (Author) / Ponce, Fernando A. (Thesis advisor) / Smith, David J. (Committee member) / Crozier, Peter A. (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2020
Description
A framework to obtain the failure surface of a unidirectional composite which can be used as an input for Generalized Tabulated Failure Criterion in MAT_213 – an orthotropic elasto-plastic material model implemented in LS-DYNA, a commercial finite element program, is discussed in this research. A finite element model consisting of the fiber and the matrix is generated using the Virtual Testing Software System (VTSS) developed at Arizona State University (ASU). The framework is illustrated using the T800-F3900 unidirectional composite material manufactured by Toray Composites. The T800S fiber is modeled using MAT_213. The F3900 matrix phase is modeled using MAT_187-SAMP1. The response of the virtual tests in 1-direction tension, 1-direction compression, 2-direction tension, 2-direction compression and 2-1 plane shear are verified against the results obtained from experiments performed under quasi-static and room temperature conditions (QS-RT). Finally, a roadmap to generate the failure surface using virtual test is proposed.
ContributorsParakhiya, Yatin (Author) / Rajan, Subramaniam D. (Thesis advisor) / Mobahser, Barzin (Committee member) / Hoover, Christian (Committee member) / Arizona State University (Publisher)
Created2020
Description
Vibrational spectroscopy is a ubiquitous characterization tool in elucidating atomic structure at the bulk and nanoscale. The ability to perform high spatial resolution vibrational spectroscopy in a scanning transmission electron microscope (STEM) with electron energy-loss spectroscopy (EELS) has the potential to affect a variety of materials science problems. Since 2014, instrumentation development has pushed for incremental improvements in energy resolution, with the current best being 4.2 meV. Although this is poor in comparison to what is common in photon or neutron vibrational spectroscopies, the spatial resolution offered by vibrational EELS is equal to or better than the best of these other techniques.
The major objective of this research program is to investigate the spatial resolution of the monochromated energy-loss signal in the transmission-beam mode and correlate it to the excitation mechanism of the associated vibrational mode. The spatial variation of dipole vibrational signals in SiO2 is investigated as the electron probe is scanned across an atomically abrupt SiO2/Si interface. The Si-O bond stretch signal has a spatial resolution of 2 – 20 nm, depending on whether the interface, bulk, or surface contribution is chosen. For typical TEM specimen thicknesses, coupled surface modes contribute strongly to the spectrum. These coupled surface modes are phonon polaritons, whose intensity and spectral positions are strongly specimen geometry dependent. In a SiO2 thin-film patterned with a 2x2 array, dielectric theory simulations predict the simultaneous excitation of parallel and uncoupled surface polaritons and a very weak excitation of the orthogonal polariton.
It is demonstrated that atomic resolution can be achieved with impact vibrational signals from optical and acoustic phonons in a covalently bonded material like Si. Sub-nanometer resolution mapping of the Si-O symmetric bond stretch impact signal can also be performed in an ionic material like SiO2. The visibility of impact energy-loss signals from excitation of Brillouin zone boundary vibrational modes in hexagonal BN is seen to be a strong function of probe convergence, but not as strong a function of spectrometer collection angles. Some preliminary measurements to detect adsorbates on catalyst nanoparticle surfaces with minimum radiation damage in the aloof-beam mode are also presented.
The major objective of this research program is to investigate the spatial resolution of the monochromated energy-loss signal in the transmission-beam mode and correlate it to the excitation mechanism of the associated vibrational mode. The spatial variation of dipole vibrational signals in SiO2 is investigated as the electron probe is scanned across an atomically abrupt SiO2/Si interface. The Si-O bond stretch signal has a spatial resolution of 2 – 20 nm, depending on whether the interface, bulk, or surface contribution is chosen. For typical TEM specimen thicknesses, coupled surface modes contribute strongly to the spectrum. These coupled surface modes are phonon polaritons, whose intensity and spectral positions are strongly specimen geometry dependent. In a SiO2 thin-film patterned with a 2x2 array, dielectric theory simulations predict the simultaneous excitation of parallel and uncoupled surface polaritons and a very weak excitation of the orthogonal polariton.
It is demonstrated that atomic resolution can be achieved with impact vibrational signals from optical and acoustic phonons in a covalently bonded material like Si. Sub-nanometer resolution mapping of the Si-O symmetric bond stretch impact signal can also be performed in an ionic material like SiO2. The visibility of impact energy-loss signals from excitation of Brillouin zone boundary vibrational modes in hexagonal BN is seen to be a strong function of probe convergence, but not as strong a function of spectrometer collection angles. Some preliminary measurements to detect adsorbates on catalyst nanoparticle surfaces with minimum radiation damage in the aloof-beam mode are also presented.
ContributorsVenkatraman, Kartik (Author) / Crozier, Peter (Thesis advisor) / Rez, Peter (Committee member) / Wang, Robert (Committee member) / Tongay, Sefaattin (Committee member) / Arizona State University (Publisher)
Created2020
Description
This dissertation covers my doctoral research on the cathodoluminescence (CL) study of the optical properties of III-niride semiconductors.
The first part of this thesis focuses on the optical properties of Mg-doped gallium nitride (GaN:Mg) epitaxial films. GaN is an emerging material for power electronics, especially for high power and high frequency applications. Compared to traditional Si-based devices, GaN-based devices offer superior breakdown properties, faster switching speed, and reduced system size. Some of the current device designs involve lateral p-n junctions which require selective-area doping. Dopant distribution in the selectively-doped regions is a critical issue that can impact the device performance. While most studies on Mg doping in GaN have been reported for epitaxial grown on flat c-plane substrates, questions arise regarding the Mg doping efficiency and uniformity in selectively-doped regions, where growth on surfaces etched away from the exact c-plane orientation is involved. Characterization of doping concentration distribution in lateral structures using secondary ion mass spectroscopy lacks the required spatial resolution. In this work, visualization of acceptor distribution in GaN:Mg epilayers grown by metalorganic chemical vapor deposition (MOCVD) was achieved at sub-micron scale using CL imaging. This was enabled by establishing a correlation among the luminescence characteristics, acceptor concentration, and electrical conductivity of GaN:Mg epilayers. Non-uniformity in acceptor distribution has been observed in epilayers grown on mesa structures and on miscut substrates. It is shown that non-basal-plane surfaces, such as mesa sidewalls and surface step clusters, promotes lateral growth along the GaN basal planes with a reduced Mg doping efficiency. The influence of surface morphology on the Mg doping efficiency in GaN has been studied.
The second part of this thesis focuses on the optical properties of InGaN for photovoltaic applications. The effects of thermal annealing and low energy electron beam irradiation (LEEBI) on the optical properties of MOCVD-grown In0.14Ga0.86N films were studied. A multi-fold increase in luminescence intensity was observed after 800 °C thermal annealing or LEEBI treatment. The mechanism leading to the luminescence intensity increase has been discussed. This study shows procedures that significantly improve the luminescence efficiency of InGaN, which is important for InGaN-based optoelectronic devices.
The first part of this thesis focuses on the optical properties of Mg-doped gallium nitride (GaN:Mg) epitaxial films. GaN is an emerging material for power electronics, especially for high power and high frequency applications. Compared to traditional Si-based devices, GaN-based devices offer superior breakdown properties, faster switching speed, and reduced system size. Some of the current device designs involve lateral p-n junctions which require selective-area doping. Dopant distribution in the selectively-doped regions is a critical issue that can impact the device performance. While most studies on Mg doping in GaN have been reported for epitaxial grown on flat c-plane substrates, questions arise regarding the Mg doping efficiency and uniformity in selectively-doped regions, where growth on surfaces etched away from the exact c-plane orientation is involved. Characterization of doping concentration distribution in lateral structures using secondary ion mass spectroscopy lacks the required spatial resolution. In this work, visualization of acceptor distribution in GaN:Mg epilayers grown by metalorganic chemical vapor deposition (MOCVD) was achieved at sub-micron scale using CL imaging. This was enabled by establishing a correlation among the luminescence characteristics, acceptor concentration, and electrical conductivity of GaN:Mg epilayers. Non-uniformity in acceptor distribution has been observed in epilayers grown on mesa structures and on miscut substrates. It is shown that non-basal-plane surfaces, such as mesa sidewalls and surface step clusters, promotes lateral growth along the GaN basal planes with a reduced Mg doping efficiency. The influence of surface morphology on the Mg doping efficiency in GaN has been studied.
The second part of this thesis focuses on the optical properties of InGaN for photovoltaic applications. The effects of thermal annealing and low energy electron beam irradiation (LEEBI) on the optical properties of MOCVD-grown In0.14Ga0.86N films were studied. A multi-fold increase in luminescence intensity was observed after 800 °C thermal annealing or LEEBI treatment. The mechanism leading to the luminescence intensity increase has been discussed. This study shows procedures that significantly improve the luminescence efficiency of InGaN, which is important for InGaN-based optoelectronic devices.
ContributorsLiu, Hanxiao (Author) / Ponce, Fernando A. (Thesis advisor) / Zhao, Yuji (Committee member) / Newman, Nathan (Committee member) / Fischer, Alec M (Committee member) / Arizona State University (Publisher)
Created2020
Description
The manufacturing process for electronic systems involves many players, from chip/board design and fabrication to firmware design and installation.
In today's global supply chain, any of these steps are prone to interference from rogue players, creating a security risk.
Manufactured devices need to be verified to perform only their intended operations since it is not economically feasible to control the supply chain and use only trusted facilities.
It is becoming increasingly necessary to trust but verify the received devices both at production and in the field.
Unauthorized hardware or firmware modifications, known as Trojans,
can steal information, drain the battery, or damage battery-driven embedded systems and lightweight Internet of Things (IoT) devices.
Since Trojans may be triggered in the field at an unknown instance,
it is essential to detect their presence at run-time.
However, it isn't easy to run sophisticated detection algorithms on these devices
due to limited computational power and energy, and in some cases, lack of accessibility.
Since finding a trusted sample is infeasible in general, the proposed technique is based on self-referencing to remove any effect of environmental or device-to-device variations in the frequency domain.
In particular, the self-referencing is achieved by exploiting the band-limited nature of Trojan activity using signal detection theory.
When the device enters the test mode, a predefined test application is run on the device
repetitively for a known period. The periodicity ensures that the spectral electromagnetic power of the test application concentrates at known frequencies, leaving the remaining frequencies within the operating bandwidth at the noise level. Any deviations from the noise level for these unoccupied frequency locations indicate the presence of unknown (unauthorized) activity. Hence, the malicious activity can differentiate without using a golden reference or any knowledge of the Trojan activity attributes.
The proposed technique's effectiveness is demonstrated through experiments with collecting and processing side-channel signals, such as involuntarily electromagnetic emissions and power consumption, of a wearable electronics prototype and commercial system-on-chip under a variety of practical scenarios.
In today's global supply chain, any of these steps are prone to interference from rogue players, creating a security risk.
Manufactured devices need to be verified to perform only their intended operations since it is not economically feasible to control the supply chain and use only trusted facilities.
It is becoming increasingly necessary to trust but verify the received devices both at production and in the field.
Unauthorized hardware or firmware modifications, known as Trojans,
can steal information, drain the battery, or damage battery-driven embedded systems and lightweight Internet of Things (IoT) devices.
Since Trojans may be triggered in the field at an unknown instance,
it is essential to detect their presence at run-time.
However, it isn't easy to run sophisticated detection algorithms on these devices
due to limited computational power and energy, and in some cases, lack of accessibility.
Since finding a trusted sample is infeasible in general, the proposed technique is based on self-referencing to remove any effect of environmental or device-to-device variations in the frequency domain.
In particular, the self-referencing is achieved by exploiting the band-limited nature of Trojan activity using signal detection theory.
When the device enters the test mode, a predefined test application is run on the device
repetitively for a known period. The periodicity ensures that the spectral electromagnetic power of the test application concentrates at known frequencies, leaving the remaining frequencies within the operating bandwidth at the noise level. Any deviations from the noise level for these unoccupied frequency locations indicate the presence of unknown (unauthorized) activity. Hence, the malicious activity can differentiate without using a golden reference or any knowledge of the Trojan activity attributes.
The proposed technique's effectiveness is demonstrated through experiments with collecting and processing side-channel signals, such as involuntarily electromagnetic emissions and power consumption, of a wearable electronics prototype and commercial system-on-chip under a variety of practical scenarios.
ContributorsKarabacak, Fatih (Author) / Ozev, Sule (Thesis advisor) / Ogras, Umit Y. (Thesis advisor) / Christen, Jennifer Blain (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2020
Description
This graduate thesis explains and discusses the background, methods, limitations, and future work of developing a low-budget, variable-length, Arduino-based robotics professional development program (PDP) for middle school or high school classrooms. This graduate thesis builds on prior undergraduate thesis work and conclusions. The main conclusions from the undergraduate thesis work focused on reaching a larger teacher population along with providing a more robust robot design and construction. The end goal of this graduate thesis is to develop a PDP that reaches multiple teachers, involves a more robust robot design, and lasts beyond this developmental year. There have been many similar research studies and PDPs that have been tested and analyzed but do not fit the requirements of this graduate thesis. These programs provide some guidance in the creation of a new PDP. The overall method of the graduate thesis comes in four main phases: 1) setup, 2) pre-PDP phase, 3) PDP phase, and 4) post PDP phase. The setup focused primarily on funding, IRB approval, research, timeline development, and research question creation. The pre-PDP phase focused primarily on the development of new tailored-to-teacher content, a more robust robot design, and recruitment of participants. The PDP phase primarily focused on how the teachers perform and participate in the PDP. Lastly, the post PDP phase involved data analysis along with a resource development plan. The last post-PDP step is to consolidate all of the findings in a clear, concise, and coherent format for future work.
Contributorslerner, jonah (Author) / Carberry, Adam (Thesis advisor) / Walters, Molina (Committee member) / Jordan, Shawn (Committee member) / Arizona State University (Publisher)
Created2020