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Protection of Flash Memory in the Space Environment

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This is a test plan document for Team Aegis' capstone project that has the goal of mitigating single event upsets in NAND flash memory caused by space radiation.

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2021-05

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Advanced PV Inverter with Grid Supporting Functions using Wide Bandgap Devices and the IEEE 1547-2018

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Energy poverty is the lack of access to the basic energy resources needed for human development. Fossil fuels, through their heavy emissions and transience, are slowly but surely leaving room for change in the energy sector as renewable energy sources

Energy poverty is the lack of access to the basic energy resources needed for human development. Fossil fuels, through their heavy emissions and transience, are slowly but surely leaving room for change in the energy sector as renewable energy sources rise to the challenge of sustainable, clean, and cost-efficient energy production. Because it is mostly located in rural areas, solutions crafted against energy poverty need to be appropriate for those areas and their development objectives. As top contenders, photovoltaics insertion in the energy market has largely soared creating, therefore, a need for its distributed energy resources to interconnect appropriately to the area electrical power system. EEE Senior Design Team 11 saw in this the need to design an advanced photovoltaic inverter with those desired grid functions but also leveraging the technological superiority of wide bandgap devices over silicon semiconductors. The honors creative project is an integral part of the senior design capstone project for Team 11. It has a two-front approach, first exploring the IEEE 1547-2018 standard on distributed energy resources; then focusing on the author’s personal contribution to the aforementioned senior design project: digital signal processing and grid support implementation. This report serves as an accompanying write up to the creative project.

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Date Created
2019-05

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Solar Powered Intrusion Detector

Description

The project described here is a solar powered intrusion detection system consisting of three modules: a battery recharging circuit, a laser emitter and photodetector pair, and a Wi- Fi connectivity board. Over the preceding seven months, great care has been

The project described here is a solar powered intrusion detection system consisting of three modules: a battery recharging circuit, a laser emitter and photodetector pair, and a Wi- Fi connectivity board. Over the preceding seven months, great care has been taken for the design and construction of this system. The first three months were spent researching and selecting suitable IC's and external components (e.g. solar panel, batteries, etc.). Then, the next couple of months were spent ordering specific materials and equipment for the construction of our prototype. Finally, the last two months were used to build a working prototype, with a substantial amount of time used for perfecting our system's packaging and operation. This report will consist of a detailed discussion of our team's research, design activities, prototype implementation, final budget, and final schedule. Technical discussion of the concepts behind our design will assist with understanding the design activities and prototype implementation sections that will follow. Due to the generous funding of the group from the Barrett Honors College, our overall budget available for the project was $1600. Of that amount, only $334.51 was spent on the actual system components, with $829.42 being spent on the equipment and materials needed for the testing and construction of the prototype. As far as the schedule goes, we are essentially done with the project. The only tasks left to finish are a successful defense of the project at the oral presentation on Friday, 29 March 2013, followed by a successful demo on 26 April 2013.

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2013-05

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Temperature dependent qualities of amorphous silicon and amorphous silicon carbide passivating stacks

Description

Layers of intrinsic hydrogenated amorphous silicon and amorphous silicon carbide

were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier lifetime, optical band gap and

Layers of intrinsic hydrogenated amorphous silicon and amorphous silicon carbide

were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier lifetime, optical band gap and FTIR spectra were observed at incremental stages of thermal annealing. By observing the changes in the lifetimes the sample structure responsible for the most thermally robust surface passivation could be determined. These results were correlated to the optical band gap and the position and relative area of peaks in the FTIR spectra related to to silicon-hydrogen bonds in the layers. It was found that due to an increased presence of hydrogen bonded to silicon at voids within the passivating layer, hydrogenated amorphous silicon carbide at the interface of the substrate coupled with a hydrogenated amorphous silicon top layer provides better passivation after high temperature annealing than other device structures.

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Date Created
2016