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- All Subjects: Radiation
- All Subjects: solar
- Creators: Kozicki, Michael
were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier lifetime, optical band gap and FTIR spectra were observed at incremental stages of thermal annealing. By observing the changes in the lifetimes the sample structure responsible for the most thermally robust surface passivation could be determined. These results were correlated to the optical band gap and the position and relative area of peaks in the FTIR spectra related to to silicon-hydrogen bonds in the layers. It was found that due to an increased presence of hydrogen bonded to silicon at voids within the passivating layer, hydrogenated amorphous silicon carbide at the interface of the substrate coupled with a hydrogenated amorphous silicon top layer provides better passivation after high temperature annealing than other device structures.
This is a test plan document for Team Aegis' capstone project that has the goal of mitigating single event upsets in NAND flash memory caused by space radiation.
In collaboration with Moog Broad Reach and Arizona State University, a<br/>team of five undergraduate students designed a hardware design solution for<br/>protecting flash memory data in a spaced-based radioactive environment. Team<br/>Aegis have been working on the research, design, and implementation of a<br/>Verilog- and Python-based error correction code using a Reed-Solomon method<br/>to identify bit changes of error code. For an additional senior design project, a<br/>Python code was implemented that runs statistical analysis to identify whether<br/>the error correction code is more effective than a triple-redundancy check as well<br/>as determining if the presence of errors can be modeled by a regression model.