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Graphene is a very strong two-dimensional material with a lot of potential applications in microelectromechanical systems (MEMS). In this research, graphene is being optimized for use in a 5 m x 5 m graphene resonator. To work properly, this graphene resonator must have a uniform strain across all manufactured devices. To reduce strain induced in graphene sheets grown for use in these resonators, evaporated platinum has been used in this investigation due to its relatively lower surface roughness compared to copper films. The final goal is to have the layer of ultrathin platinum (<=200 nm) deposited on the MEMS graphene resonator and used to grow graphene directly onto the devices to remove the manual transfer step due to its inscalability. After growth, graphene is coated with polymer and the platinum is then etched. This investigation concentrated on the transfer process of graphene onto Si/SiO2 substrate from the platinum films. It was determined that the ideal platinum etchant was aqua regia at a volumetric ratio of 6:3:1 (H2O:HCl:HNO3). This concentration was dilute enough to preserve the polymer and graphene layer, but strong enough to etch within a day. Type and thickness of polymer support layers were also investigated. PMMA at a thickness of 200 nm was ideal because it was easy to remove with acetone and strong enough to support the graphene during the etch process. A reference growth recipe was used in this investigation, but now that the transfer has been demonstrated, growth can be optimized for even thinner films.
ContributorsCayll, David Richard (Author) / Tongay, Sefaattin (Thesis director) / Lee, Hyunglae (Committee member) / Mechanical and Aerospace Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
Description
The proposed research mainly focuses on employing tunable materials to achieve dynamic control of radiative heat transfer in both far and near fields for thermal management. Vanadium dioxide (VO2), which undergoes a phase transition from insulator to metal at the temperature of 341 K, is one tunable material being applied. The other one is graphene, whose optical properties can be tuned by chemical potential through external bias or chemical doping.
In the far field, a VO2-based metamaterial thermal emitter with switchable emittance in the mid-infrared has been theoretically studied. When VO2 is in the insulating phase, high emittance is observed at the resonance frequency of magnetic polaritons (MPs), while the structure becomes highly reflective when VO2 turns metallic. A VO2-based thermal emitter with tunable emittance is also demonstrated due to the excitation of MP at different resonance frequencies when VO2 changes phase. Moreover, an infrared thermal emitter made of graphene-covered SiC grating could achieve frequency-tunable emittance peak via the change of the graphene chemical potential.
In the near field, a radiation-based thermal rectifier is constructed by investigating radiative transfer between VO2 and SiO2 separated by nanometer vacuum gap distances. Compared to the case where VO2 is set as the emitter at 400 K as a metal, when VO2 is considered as the receiver at 300 K as an insulator, the energy transfer is greatly enhanced due to the strong surface phonon polariton (SPhP) coupling between insulating VO2 and SiO2. A radiation-based thermal switch is also explored by setting VO2 as both the emitter and the receiver. When both VO2 emitter and receiver are at the insulating phase, the switch is at the “on” mode with a much enhanced heat flux due to strong SPhP coupling, while the near-field radiative transfer is greatly suppressed when the emitting VO2 becomes metallic at temperatures higher than 341K during the “off” mode. In addition, an electrically-gated thermal modulator made of graphene covered SiC plates is theoretically studied with modulated radiative transport by varying graphene chemical potential. Moreover, the MP effect on near-field radiative transport has been investigated by spectrally enhancing radiative heat transfer between two metal gratings.
In the far field, a VO2-based metamaterial thermal emitter with switchable emittance in the mid-infrared has been theoretically studied. When VO2 is in the insulating phase, high emittance is observed at the resonance frequency of magnetic polaritons (MPs), while the structure becomes highly reflective when VO2 turns metallic. A VO2-based thermal emitter with tunable emittance is also demonstrated due to the excitation of MP at different resonance frequencies when VO2 changes phase. Moreover, an infrared thermal emitter made of graphene-covered SiC grating could achieve frequency-tunable emittance peak via the change of the graphene chemical potential.
In the near field, a radiation-based thermal rectifier is constructed by investigating radiative transfer between VO2 and SiO2 separated by nanometer vacuum gap distances. Compared to the case where VO2 is set as the emitter at 400 K as a metal, when VO2 is considered as the receiver at 300 K as an insulator, the energy transfer is greatly enhanced due to the strong surface phonon polariton (SPhP) coupling between insulating VO2 and SiO2. A radiation-based thermal switch is also explored by setting VO2 as both the emitter and the receiver. When both VO2 emitter and receiver are at the insulating phase, the switch is at the “on” mode with a much enhanced heat flux due to strong SPhP coupling, while the near-field radiative transfer is greatly suppressed when the emitting VO2 becomes metallic at temperatures higher than 341K during the “off” mode. In addition, an electrically-gated thermal modulator made of graphene covered SiC plates is theoretically studied with modulated radiative transport by varying graphene chemical potential. Moreover, the MP effect on near-field radiative transport has been investigated by spectrally enhancing radiative heat transfer between two metal gratings.
ContributorsYang, Yue (Author) / Wang, Liping (Thesis advisor) / Phelan, Patrick (Committee member) / Wang, Robert (Committee member) / Tongay, Sefaattin (Committee member) / Rykaczewski, Konrad (Committee member) / Arizona State University (Publisher)
Created2016
Description
Thin film solar cells are based on polycrystalline materials that contain a high concentration of intrinsic and extrinsic defects. Improving the device efficiency in such systems relies on understanding the nature of defects - whether they are positive, negative, or neutral in their influence - and their sources in order to engineer optimized absorbers. Oftentimes, these are studied individually, as characterization techniques are limited in their ability to directly relate material properties in individual layers to their impact on the actual device performance. Expanding the tools available for increased understanding of materials and devices has been critical for reducing the translation time of laboratory-scale research to changes in commercial module manufacturing lines. The use of synchrotron X-ray fluorescence (XRF) paired with X-ray beam induced current and voltage (XBIC, XBIV respectively) has proven to be an effective technique for understanding the impact of material composition and inhomogeneity on solar cell device functioning. The combination of large penetration depth, small spot size, and high flux allows for the measurement of entire solar cell stacks with high spatial resolution and chemical sensitivity. In this work, I combine correlative XRF/XBIC/XBIV with other characterization approaches across varying length scales, such as micro-Raman spectroscopy and photoluminescence, to understand how composition influences device performance in thin films. The work described here is broken into three sections. Firstly, understanding the influence of KF post-deposition treatment (PDT) and the use of Ag-alloying to reduce defect density in the Ga-free material system, CuInSe2 (CIS). Next, applying a similar characterization workflow to industrially relevant Ga-containing Cu(In1-xGax)Se2 (CIGS) modules with Ag and KF-PDT. The influence of light soaking and dark heat exposure on the modules are also studied in detail. Results show that Ag used with KF-PDT in CIS causes undesirable cation ordering at the CdS interface and affects the device through increased potential fluctuations. The results also demonstrate the importance of tuning the concentration of KF-PDT used when intended to be used in Ag-alloyed devices. Commercially-processed modules with optimized Ag and KF concentrations are shown to have the device performance instead be dominated by variations in the CIGS composition itself. In particular, changes in Cu and Se concentrations are found to be most influential on the device response to accelerated stressors such as dark heat exposure and light soaking. In the final chapter, simulations of nano-scale XBIC and XBIV are done to contribute to the understanding of these measurements.
ContributorsNietzold, Tara (Author) / Bertoni, Mariana I. (Thesis advisor) / Holt, Martin (Committee member) / Shafarman, William N. (Committee member) / Tongay, Sefaattin (Committee member) / Arizona State University (Publisher)
Created2021
Description
A Fundamental study of bulk, layered, and monolayers bromide lead perovskites structural, optical, and electrical properties have been studied as thickness changes. X-Ray Diffraction (XRD) and Raman spectroscopy measures the structural parameter showing how the difference in the thicknesses changes the crystal structures through observing changes in average lattice constant, atomic spacing, and lattice vibrations.
Optical and electrical properties have also been studied mainly focusing on the thickness effect on different properties where the Photoluminescence (PL) and exciton binding energies show energy shift as thickness of the material changes. Temperature dependent PL has shown different characteristics when comparing methylammonium lead bromide (MAPbBr3) to butylammonium lead bromide (BA2PbBr4) and comparing the two layered n=1 materials butylammonium lead bromide (BA2PbBr4) to butylammonium lead iodide (BA2PbI4). Time-resolved spectroscopy displays different lifetimes as thickness of bromide-based perovskite changes. Finally, thickness dependence (starting from monolayers) Kelvin Probe Force Microscopy (KPFM) of the layered materials BA2PbBr4, Butylammonium(methylammonium)lead bromide (BA2MAPb2Br7), and molybdenum sulfide (MoS2) were studied showing an exponential relation between the thickness of the materials and their surface potentials.
Optical and electrical properties have also been studied mainly focusing on the thickness effect on different properties where the Photoluminescence (PL) and exciton binding energies show energy shift as thickness of the material changes. Temperature dependent PL has shown different characteristics when comparing methylammonium lead bromide (MAPbBr3) to butylammonium lead bromide (BA2PbBr4) and comparing the two layered n=1 materials butylammonium lead bromide (BA2PbBr4) to butylammonium lead iodide (BA2PbI4). Time-resolved spectroscopy displays different lifetimes as thickness of bromide-based perovskite changes. Finally, thickness dependence (starting from monolayers) Kelvin Probe Force Microscopy (KPFM) of the layered materials BA2PbBr4, Butylammonium(methylammonium)lead bromide (BA2MAPb2Br7), and molybdenum sulfide (MoS2) were studied showing an exponential relation between the thickness of the materials and their surface potentials.
ContributorsAlenezi, Omar (Author) / Tongay, Sefaattin (Thesis advisor) / King, Richard (Thesis advisor) / Yao, Yu (Committee member) / Arizona State University (Publisher)
Created2019