Matching Items (3)
Description
This thesis presents a study of the microstructure and mechanical properties of Yttrium-Zinc (YZn) thin films. Rare-earth intermetallic compounds have gained significant attention in recent years due to their unique structural and mechanical properties, making them suitable for various applications. However, studies on the Y-Zn system are scarce and there are very few published reports on YZn thin films. The main objective of this study is to investigate the microstructure and mechanical properties of YZn thin films using various experimental techniques.In this study, YZn films of various thicknesses were synthesized via magnetron co-sputtering: 200 nm, 500 nm, 1 µm, 2 µm and 11.5 µm. Then these samples were annealed at 250°C, 300°C, 350°C and 400°C to investigate their microstructural evolution and mechanical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) based techniques have been used to analyze the microstructure and chemical composition of these compounds. The mechanical properties such as hardness and elastic modulus have been measured using nanoindentation.
The results show that the microstructure of YZn thin films is dependent on the annealing conditions. The microstructure of samples deposited at room temperature and those annealed at 250°C and 300°C were found to be amorphous except for the 200 nm YZn film. Annealing at higher temperatures leads to crystallization of the films. Moreover, the results demonstrate that YZn intermetallic thin films have high hardness, which varies with the film thickness and annealing treatment.
This work represents an initial effort to understand the microstructural evolution and mechanical properties of YZn thin films as a function of film thickness and annealing temperatures. The results of this study can be used to guide the design and development of YZn thin films with tailored microstructures and mechanical properties for various applications.
ContributorsAkkarakaduppil, Riju Philip James (Author) / Rajagopalan, Jagannathan (Thesis advisor, Committee member) / Peralta, Pedro (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2023
Description
The availability of bulk gallium nitride (GaN) substrates has generated great interest in the development of vertical GaN-on-GaN power devices. The vertical devices made of GaN have not been able to reach their true potential due to material growth related issues. Power devices typically have patterned p-n, and p-i junctions in lateral, and vertical direction relative to the substrate. Identifying the variations from the intended layer design is crucial for failure analysis of the devices. A most commonly used dopant profiling technique, secondary ion mass spectroscopy (SIMS), does not have the spatial resolution to identify the dopant distribution in patterned devices. The possibility of quantitative dopant profiling at a sub-micron scale for GaN in a scanning electron microscope (SEM) is discussed. The total electron yield in an SEM is shown to be a function of dopant concentration which can potentially be used for quantitative dopant profiling.
Etch-and-regrowth is a commonly employed strategy to generate the desired patterned p-n and p-i junctions. The devices involving etch-and-regrowth have poor performance characteristics like high leakage currents, and lower breakdown voltages. This is due to damage induced by the dry etching process, and the nature of the regrowth interface, which is important to understand in order to address the key issue of leakage currents in etched and regrown devices. Electron holography is used for electrostatic potential profiling across the regrowth interfaces to identify the charges introduced by the etching process. SIMS is used to identify the impurities introduced at the interfaces due to etch-and-regrowth process.
Etch-and-regrowth is a commonly employed strategy to generate the desired patterned p-n and p-i junctions. The devices involving etch-and-regrowth have poor performance characteristics like high leakage currents, and lower breakdown voltages. This is due to damage induced by the dry etching process, and the nature of the regrowth interface, which is important to understand in order to address the key issue of leakage currents in etched and regrown devices. Electron holography is used for electrostatic potential profiling across the regrowth interfaces to identify the charges introduced by the etching process. SIMS is used to identify the impurities introduced at the interfaces due to etch-and-regrowth process.
ContributorsAlugubelli, Shanthan Reddy (Author) / Ponce, Fernando A. (Thesis advisor) / McCartney, Martha (Committee member) / Newman, Nathan (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2019
Description
Interconnection methods for IBC photovoltaic (PV) module integration have widely been explored yet a concrete and cost-effective solution has yet to be found. Traditional methods of tabbing and stringing which are still being used today impart increased stress on the cells, not to mention the high temperatures induced during the soldering process as well. In this work and effective and economical interconnection method is demonstrated, by laser welding an embossed aluminum (Al) electrode layer to screen-printed silver (Ag) on the solar cell. Contact resistivity below 1mΩ.cm2 is measured with the proposed design. Cross-sectional analysis of interfaces is conducted via Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDXS) methods. Typical laser weld phenomenon observed involves Al ejection at the entrance of the weld, followed by Al and Ag fusing together mid-way through the weld spot, as revealed by cross-sectional depth analysis. The effects of voltage and lamp intensity are also tested on the welding process. With the range of voltages tested, 240V seems to show the least process variability and the most uniform contact between Al and Ag layers, upon using an Ethylene-Vinyl Acetate (EVA) encapsulant. Two lamp intensities were also explored with a Polyolefin (POE) encapsulant with Al and Ag layers seen welded together as well. Smaller effect sizes at lamp 2 intensity showed better contact. A process variability analysis was conducted to understand the effects of the two different lamps on welds being formed. Lamp 2 showed a bi-modal size distribution with a higher peak intensity, with more pulses coupling into the sample, as compared to lamp 1.
ContributorsSukumar Mony, Sujyot (Author) / Holman, Zachary (Thesis advisor) / Alford, Terry (Committee member) / Yu, Zhengshan (Committee member) / Arizona State University (Publisher)
Created2019