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Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

Description
A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess current response in a bipolar transistor given inputs of interface (NIT)…

A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess current response in a bipolar transistor given inputs of interface (NIT) and oxide defects (NOT) which are caused by ionizing radiation exposure. Existing models that attempt to predict this excess base current response are derived and discussed in detail. An improved model is proposed which modifies the existing model and incorporates the impact of charged interface trap defects on radiation-induced excess base current. The improved accuracy of the new model in predicting excess base current response in lateral PNP (LPNP) is then verified with Technology Computer Aided Design (TCAD) simulations. Finally, experimental data and compared with the improved and existing model calculations.
ContributorsTolleson, Blayne S. (Author) / Barnaby, Hugh J (Thesis advisor) / Gonzalez-Velo, Yago (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2017