Matching Items (2)
Description
Dealloying, the selective electrochemical dissolution of an active component from an alloy, often results in nanoscale bi-continuous solid/void morphologies. These structures are attracting attention for a wide range of applications including catalysis, sensing and actuation. The evolution of these nanoporous structures has been widely studied for the case at low homologous temperature, TH, such as in Ag-Au, Cu-Au, Cu-Pt, etc. Since at low TH the solid-state mobility of the components is of order 10-30 cm2s-1 or less, percolation dissolution is the only mechanism available to support dealloying over technologically relevant time scales. Without the necessity of solid-state mass transport, percolation dissolution involves sharp transitions based on two key features, the parting limit and critical potential.
Dealloying under conditions of high TH, (or high intrinsic diffusivity of the more electrochemically reactive component) is considerably more complicated than at low TH. Since solid-state mass transport is available to support this process, a rich set of morphologies, including negative or void dendrites, Kirkendall voids and bi-continuous porous structures, can evolve. In order to study dealloying at high TH we have examined the behavior of Li-Sn and Li-Pb alloys. The intrinsic diffusivities of Li were measured in these alloys using electrochemical titration and time of flight measurements. Morphology evolution was studied with varying alloy composition, host dimension and imposed electrochemical conditions. Owing to diffusive transport, there is no parting limit for dealloying, however, there is a compositional threshold (pPD) as well as a critical potential for the operation of percolation dissolution and the formation of bi-continuous structures. Negative or void dendrite morphologies evolve at compositions below pPD and at large values of the applied electrochemical potential when the rate of dealloying is limited by solid-state mass transport. This process is isomorphic to dendrite formation in electrodeposition. Kirkendall voiding morphologies evolve below the critical potential over the entire range of alloy compositions.
We summarize our results by introducing dealloying morphology diagrams that we use to graphically illustrate the electrochemical conditions resulting in various morphologies that can form under conditions of low and high TH.
Dealloying under conditions of high TH, (or high intrinsic diffusivity of the more electrochemically reactive component) is considerably more complicated than at low TH. Since solid-state mass transport is available to support this process, a rich set of morphologies, including negative or void dendrites, Kirkendall voids and bi-continuous porous structures, can evolve. In order to study dealloying at high TH we have examined the behavior of Li-Sn and Li-Pb alloys. The intrinsic diffusivities of Li were measured in these alloys using electrochemical titration and time of flight measurements. Morphology evolution was studied with varying alloy composition, host dimension and imposed electrochemical conditions. Owing to diffusive transport, there is no parting limit for dealloying, however, there is a compositional threshold (pPD) as well as a critical potential for the operation of percolation dissolution and the formation of bi-continuous structures. Negative or void dendrite morphologies evolve at compositions below pPD and at large values of the applied electrochemical potential when the rate of dealloying is limited by solid-state mass transport. This process is isomorphic to dendrite formation in electrodeposition. Kirkendall voiding morphologies evolve below the critical potential over the entire range of alloy compositions.
We summarize our results by introducing dealloying morphology diagrams that we use to graphically illustrate the electrochemical conditions resulting in various morphologies that can form under conditions of low and high TH.
ContributorsGeng, Ke (Author) / Sieradzki, Karl (Thesis advisor) / Crozier, Peter (Committee member) / Chan, Candace (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2017
Description
Sn-based group IV materials such as Ge1-xSnx and Ge1-x-ySixSny alloys have great potential for developing Complementary Metal Oxide Semiconductor (CMOS) compatible devices on Si because of their tunable band structure and lattice constants by controlling Si and/or Sn contents. Growth of Ge1-xSnx binaries through Molecular Beam Epitaxy (MBE) started in the early 1980s, producing Ge1-xSnx epilayers with Sn concentrations varying from 0 to 100%. A Chemical Vapor Deposition (CVD) method was developed in the early 2000s for growing Ge1-xSnx alloys of device quality, by utilizing various chemical precursors. This method dominated the growth of Ge1-xSnx alloys rapidly because of the great crystal quality of Ge1-xSnx achieved. As the first practical ternary alloy completely based on group IV elements, Ge1-x-ySixSny decouples bandgap and lattice constant, becoming a prospective CMOS compatible alloy. At the same time, Ge1-x-ySixSny ternary system could serve as a thermally robust alternative to Ge1-ySny binaries given that it becomes a direct semiconductor at a Sn concentration of 6%-10%. Ge1-x-ySixSny growths by CVD is summarized in this thesis. With the Si/Sn ratio kept at ~3.7, the ternary alloy system is lattice matched to Ge, resulting a tunable direct bandgap of 0.8-1.2 eV. With Sn content higher than Si content, the ternary alloy system could have an indirect-to-direct transition, as observed for Ge1-xSnx binaries. This thesis summarizes the development of Ge1-xSnx and Ge1-x-ySixSny alloys through MBE and CVD in recent decades and introduces an innovative direct injection method for synthesizing Ge1-x-ySixSny ternary alloys with Sn contents varying from 5% to 12% and Si contents kept at 1%-2%. Grown directly on Si (100) substrates in a Gas-phase Molecular Epitaxy (GSME) reactor, both intrinsic and n-type doped Ge1-x-ySixSny with P with thicknesses of 250-760 nm have been achieved by deploying gas precursors Ge4H10, Si4H10, SnD4 and P(SiH3)3 at the unprecedented low growth temperatures of 190-220 °C. Compressive strain is reduced and crystallinity of the Ge1-x-ySixSny epilayer is improved after rapid thermal annealing (RTA) treatments. High Resolution X-ray Diffraction (HR-XRD), Rutherford Backscattering Spectrometry (RBS), cross-sectional Transmission Electron Microscope (XTEM) and Atomic Force Microscope (AFM) have been combined to characterize the structural properties of the Ge1-x-ySixSny samples, indicating good crystallinity and flat surfaces.
ContributorsHu, Ding (Author) / Kouvetakis, John (Thesis advisor) / Menéndez, Jose (Committee member) / Trovitch, Ryan (Committee member) / Arizona State University (Publisher)
Created2019