2026-05-20T10:55:19Zhttps://keep.lib.asu.edu/oai/requestoai:keep.lib.asu.edu:node-2011492025-05-05T15:53:02Zoai_pmh:alloai_pmh:repo_items201149
https://hdl.handle.net/2286/R.2.N.201149
http://rightsstatements.org/vocab/InC/1.0/
All Rights Reserved
2025
91 pages
Masters Thesis
Academic theses
en
Kirby, Tyler
Barnaby, Hugh
Sanchez Esqueda, Ivan
Kozicki, Michael
Arizona State University
Partial requirement for: M.S., Arizona State University, 2025
Field of study: Electrical Engineering
This paper describes the development of field-oxide field-effect transistor (FOXFET) and metal-oxide-semiconductor capacitor (MOSCAP) radiation test devices. These device structures will enable total ionizing dose (TID) analysis for advanced CMOS technologies across device parameter and fabrication process variables. Specifically, these devices will be used to better understand the driving mechanisms and responses of shallow trench isolations (STI) and buried oxides to TID effects.FOXFETs and MOSCAPs were fabricated at the MacroTechnology Works (MTW) and NanoFab fabrication facilities at Arizona State University as part of Southwest Advanced Prototype (SWAP) Microelectronic Commons Hub research and development effort. These test structures were then irradiated with a 9,000 Curie Shepherd 60Co gamma source at Arizona State University under various bias conditions. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were taken at various TID steps to analyze the dependence of TID effects on device fabrication process, architecture, geometry, and dimensions.
Various methods of analysis will be conducted on the results of these experiments to extract/verify various device parameters and defects, including the buildup of radiation-induced oxide trapped charge (Not) and interface traps (Nit). Technology Computer-Aided Design (TCAD) models for these devices were also built to reproduce the experimental results seen pre- and post-irradiation, as well as to provide further insight into the undesirable effects seen across these commonly used technologies.
Electrical Engineering
Radiation Effects in Isolation Oxides