2026-05-25T07:31:48Zhttps://keep.lib.asu.edu/oai/request

oai:keep.lib.asu.edu:node-1576712024-12-20T18:25:12Zoai_pmh:alloai_pmh:repo_items

157671 https://hdl.handle.net/2286/R.I.54919 http://rightsstatements.org/vocab/InC/1.0/ 2019 2021-08-01T11:49:54 xi, 74 pages : illustrations (some color) Masters Thesis Academic theses Text eng Trivedi, Dipesh Tongay, Sefaattin Green, Matthew Zhuang, Houlong Arizona State University Partial requirement for: M.S., Arizona State University, 2019 Includes bibliographical references (pages 69-74) Field of study: Materials science and engineering More recently there have been a tremendous advancement in theoretical studies showing remarkable properties that could be exploited from transition metal dichalcogenide (TMDC) Janus crystals through various applications. These Janus crystals are having a proven intrinsic electrical field due to breaking of out-of-plane inversion symmetry in a conventional TMDC when one of the chalcogenides atomic layer is being completely replaced by a layer of different chalcogen element. However, due to lack of accurate processing control at nanometer scales, key for creating a highly crystalline Janus structure has not yet been familiarized. Thus, experimental characterization and implication of these Janus crystals are still in a state of stagnation. This work presents a new advanced methodology that could prove to be highly efficient and effective for selective replacement of top layer atomic sites at room temperature conditions.<br/><br/>This is specifically more focused on proving an easy repeatability for replacement of top atomic layer chalcogenide from a parent structure of already grown TMDC monolayer (via CVD) by a post plasma processing technique. Though this developed technique is not limited to only chalcogen atom replacement but can be extended to any type of surface functionalization requirements.<br/><br/>Basic characterization has been performed on the Janus crystal of SeMoS and SeWS where, creation and characterization of SeWS has been done for the very first time, evidencing a repeatable nature of the developed methodology. Nanoscience nanotechnology Materials Science Transition Metals Layer structure (Solids) Nanostructured materials Semiconductors--Plasma effects. Semiconductors--Characterization. Plasma assisted surface atomic layer substitution for creating Janus 2D materials