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          <dc:identifier>https://hdl.handle.net/2286/R.I.40316</dc:identifier>
                  <dc:rights>http://rightsstatements.org/vocab/InC/1.0/</dc:rights>
          <dc:rights>All Rights Reserved</dc:rights>
                  <dc:date>2016</dc:date>
          <dc:date>2018-08-01T07:37:21</dc:date>
                  <dc:format>ix, 59 pages : color illustrations</dc:format>
                  <dc:type>Masters Thesis</dc:type>
          <dc:type>Academic theses</dc:type>
          <dc:type>Text</dc:type>
                  <dc:language>eng</dc:language>
                  <dc:contributor>Jain, Harsh Narendrakumar</dc:contributor>
          <dc:contributor>Bowden, Stuart</dc:contributor>
          <dc:contributor>Alford, Terry</dc:contributor>
          <dc:contributor>Holman, Zachary</dc:contributor>
          <dc:contributor>Arizona State University</dc:contributor>
                  <dc:description>Partial requirement for: M.S., Arizona State University, 2016</dc:description>
          <dc:description>Includes bibliographical references (pages 56-59)</dc:description>
          <dc:description>Field of study: Materials science and engineering</dc:description>
          <dc:description>Nickel-Copper metallization for silicon solar cells offers a cost effective alternative to&lt;br/&gt;&lt;br/&gt;traditional screen printed silver paste technology. The main objective of this work is to&lt;br/&gt;&lt;br/&gt;study the formation of nickel silicide contacts with and without native silicon dioxide SiO2.&lt;br/&gt;&lt;br/&gt;The effect of native SiO2 on the silicide formation has been studied using Raman&lt;br/&gt;&lt;br/&gt;spectroscopy, Rutherford backscattering spectrometry and sheet resistance&lt;br/&gt;&lt;br/&gt;measurements which shows that SiO&lt;br/&gt;&lt;br/&gt;2&lt;br/&gt;&lt;br/&gt;acts as a diffusion barrier for silicidation at low&lt;br/&gt;&lt;br/&gt;temperatures of 350°C. At 400°C the presence of SiO2 results in the increased formation&lt;br/&gt;&lt;br/&gt;of nickel mono-silicide phase with reduced thickness when compared to samples without&lt;br/&gt;&lt;br/&gt;any native oxide. Pre and post-anneal measurements of Suns Voc, photoluminescence and&lt;br/&gt;&lt;br/&gt;Illuminated lock in thermography show effect of annealing on electrical characteristics of&lt;br/&gt;&lt;br/&gt;the device. The presence of native oxide is found to prevent degradation of the solar cells&lt;br/&gt;&lt;br/&gt;when compared to cells without any native oxide. A process flow for fabricating silicon&lt;br/&gt;&lt;br/&gt;solar cells using light induced plating of nickel and copper with and without native oxide&lt;br/&gt;&lt;br/&gt;(SiO2) has been developed and cell results for devices fabricated on 156mm wafers have&lt;br/&gt;&lt;br/&gt;been discussed.</dc:description>
                  <dc:subject>Materials Science</dc:subject>
          <dc:subject>Copper plating</dc:subject>
          <dc:subject>light induced plating</dc:subject>
          <dc:subject>Nickel Silicide</dc:subject>
          <dc:subject>Raman spectroscopy</dc:subject>
          <dc:subject>Rutherford backscattering</dc:subject>
          <dc:subject>Solar Cells</dc:subject>
          <dc:subject>Solar Cells</dc:subject>
          <dc:subject>Nickel--Electric properties.</dc:subject>
          <dc:subject>Nickel</dc:subject>
          <dc:subject>Silicides--Electric properties.</dc:subject>
          <dc:subject>Silicides</dc:subject>
                  <dc:title>Nickel silicide contact for copper plated silicon solar cells</dc:title></oai_dc:dc></metadata></record></GetRecord></OAI-PMH>
