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          <dc:identifier>https://hdl.handle.net/2286/R.I.22910</dc:identifier>
                  <dc:rights>http://rightsstatements.org/vocab/InC/1.0/</dc:rights>
                  <dc:date>2014-05</dc:date>
                  <dc:format>54 pages</dc:format>
                  <dc:language>eng</dc:language>
                  <dc:contributor>Carpenter, Joe Victor</dc:contributor>
          <dc:contributor>Alford, Terry</dc:contributor>
          <dc:contributor>Holman, Zachary</dc:contributor>
          <dc:contributor>Barrett, The Honors College</dc:contributor>
          <dc:contributor>Chemical Engineering Program</dc:contributor>
          <dc:contributor>Materials Science and Engineering Program</dc:contributor>
                  <dc:type>Text</dc:type>
                  <dc:description>Proposed and tested were three different methods to deposit important layers of Silicon heterojunction solar cells (SHJs). If there were a shortage of Silver, Aluminum could be substituted for the contacts. If there were a shortage of Indium, Yttrium Zinc Oxide could be substituted. To improve the solar cell, the p and n type layers can be grown with hydrogenated nanocrystallline Silicon (nc-Si:H). 40% and 50% nc-Si:H has shown a maximum absorbance reduction of 5 times compared to hydrogenated amorphous Silicon (a-Si). The substitutions offer alternatives which increase the total possible amount of solar cell production, advancing toward completion of the Terrawatt challenge.</dc:description>
                  <dc:subject>Nanocrystals</dc:subject>
          <dc:subject>Photovoltaic Cells</dc:subject>
          <dc:subject>Amorphous Materials</dc:subject>
          <dc:subject>Silicon</dc:subject>
                  <dc:title>Novel Applications to Si Heterojunction Solar Cells</dc:title></oai_dc:dc></metadata></record></GetRecord></OAI-PMH>
