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128017 https://hdl.handle.net/2286/R.I.45289 <p>Cadiz, F., Courtade, E., Robert, C., Wang, G., Shen, Y., Cai, H., . . . Urbaszek, B. (2017). Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures. Physical Review X, 7(2). doi:10.1103/physrevx.7.021026</p> 10.1103/PhysRevX.7.021026 2160-3308 http://rightsstatements.org/vocab/InC/1.0/ open access http://creativecommons.org/licenses/by/4.0 2017-05-18 12 pages eng Cadiz, F. Courtade, E. Robert, C. Wang, G. Shen, Yuxia Cai, Hui Taniguchi, T. Watanabe, K. Carrere, H. Lagarde, D. Manca, M. Amand, T. Renucci, P. Tongay, Sefaattin Marie, X. Urbaszek, B. Ira A. Fulton School of Engineering Published by the American Physical Society. View the article as published at https://journals.aps.org/prx/abstract/10.1103/PhysRevX.7.021026 <p>The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS₂ an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogeneous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe₂ and WSe₂. In this work, we show that encapsulation of ML MoS₂ in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T = 4 K. Narrow optical transition linewidths are also observed in encapsulated WS₂, WSe₂, and MoSe₂ MLs. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high-quality samples. Among the new possibilities offered by the well-defined optical transitions, we measure the homogeneous broadening induced by the interaction with phonons in temperature-dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.</p> Text Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based Van Der Waals Heterostructures