Description
The molecular beam epitaxy growth of the III-V semiconductor alloy indium arsenide antimonide bismide (InAsSbBi) is investigated over a range of growth temperatures and V/III flux ratios. Bulk and quantum well structures grown on gallium antimonide (GaSb) substrates are examined. The relationships between Bi incorporation, surface morphology, growth temperature, and group-V flux are explored.
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Contributors
- Schaefer, Stephen Thomas (Author)
- Johnson, Shane R (Thesis advisor)
- Zhang, Yong-Hang (Committee member)
- Goryll, Michael (Committee member)
- King, Richard (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2020
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- Doctoral Dissertation Electrical Engineering 2020