Description
III-V-bismide semiconductor alloys are a class of materials with applications in the mid and long wave infrared spectrum. The quaternary alloy InAsSbBi is attractive because it can be grown lattice-matched to commercially available GaSb substrates, and the adjustment of the Bi and Sb mole fractions enables both lattice constant and bandgap to be tuned independently.
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Contributors
- Kosireddy, Rajeev Reddy (Author)
- Johnson, Shane R (Thesis advisor)
- Smith, David J. (Committee member)
- Alford, Terry L. (Committee member)
- Soignard, Emmanuel (Committee member)
- Arizona State University (Publisher)
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The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2020
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- Doctoral Dissertation Materials Science and Engineering 2020