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III-V-bismide semiconductor alloys are a class of materials with applications in the mid and long wave infrared spectrum. The quaternary alloy InAsSbBi is attractive because it can be grown

III-V-bismide semiconductor alloys are a class of materials with applications in the mid and long wave infrared spectrum. The quaternary alloy InAsSbBi is attractive because it can be grown lattice-matched to commercially available GaSb substrates, and the adjustment of the Bi and Sb mole fractions enables both lattice constant and bandgap to be tuned independently. This dissertation provides a comprehensive study of the surface morphology and the structural and chemical properties of InAsSbBi alloys grown by molecular beam epitaxy.

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  • 2020
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  • Text
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    • Doctoral Dissertation Materials Science and Engineering 2020

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