Sn-based group IV materials such as Ge1-xSnx and Ge1-x-ySixSny alloys have great potential for developing Complementary Metal Oxide Semiconductor (CMOS) compatible devices on Si because of their tunable band structure and lattice constants by controlling Si and/or Sn contents. Growth of Ge1-xSnx binaries through Molecular Beam Epitaxy (MBE) started in the early 1980s, producing Ge1-xSnx epilayers with Sn concentrations varying from 0 to 100%.
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- Partial requirement for: M.S., Arizona State University, 2019Note typethesis
- Includes bibliographical references (pages 62-68)Note typebibliography
- Field of study: Chemistry