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Sn-based group IV materials such as Ge1-xSnx and Ge1-x-ySixSny alloys have great potential for developing Complementary Metal Oxide Semiconductor (CMOS) compatible devices on Si because of their tunable band structure

Sn-based group IV materials such as Ge1-xSnx and Ge1-x-ySixSny alloys have great potential for developing Complementary Metal Oxide Semiconductor (CMOS) compatible devices on Si because of their tunable band structure and lattice constants by controlling Si and/or Sn contents. Growth of Ge1-xSnx binaries through Molecular Beam Epitaxy (MBE) started in the early 1980s, producing Ge1-xSnx epilayers with Sn concentrations varying from 0 to 100%.

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Date Created
  • 2019
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  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2019
      Note type
      thesis
    • Includes bibliographical references (pages 62-68)
      Note type
      bibliography
    • Field of study: Chemistry

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    by Ting Hu

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