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Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct

bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared

to the two dimensional (2D) thin-film

Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct

bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared

to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D)

nanowires can have different electronic properties for potential novel applications.

In this work, we present the study of ZnTe nanowires (NWs) that are synthesized

through a simple vapor-liquid-solid (VLS) method. By controlling the presence or

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    Date Created
    • 2017
    Resource Type
  • Text
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    Note
    • Partial requirement for: Ph.D., Arizona State University, 2017
      Note type
      thesis
    • Includes bibliographical references (pages 71-81)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Jhih-hong Peng

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