Description
Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct
bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared
to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D)
nanowires can have different electronic properties for potential novel applications.
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Contributors
- Peng, Jhih-hong (Author)
- Yu, Hongbin (Thesis advisor)
- Roedel, Ronald (Committee member)
- Goryll, Michael (Committee member)
- Zhao, Yuji (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2017
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- Partial requirement for: Ph.D., Arizona State University, 2017Note typethesis
- Includes bibliographical references (pages 71-81)Note typebibliography
- Field of study: Electrical engineering
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by Jhih-hong Peng