Description
A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes.
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Contributors
- Marrs, Michael (Author)
- Raupp, Gregory B (Thesis advisor)
- Allee, David R. (Committee member)
- Dai, Lenore L (Committee member)
- Forzani, Erica S (Committee member)
- Bawolek, Edward J (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2016
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Note
- Partial requirement for: Ph.D., Arizona State University, 2016Note typethesis
- Includes bibliographical references (pages 172-181)Note typebibliography
- Field of study: Chemical engineering
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by Michael Marrs