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This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In2Se3/Bi2Se3 heterostructures and graphene. The first part of the thesis was focused on the growth and

This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In2Se3/Bi2Se3 heterostructures and graphene. The first part of the thesis was focused on the growth and characterization of lateral SiNW. Lateral here refers to wires growing along the plane of substrate; vertical NW on the other hand grow out of the plane of substrate. It was found, using the Au-seeded vapor – liquid – solid technique, that epitaxial single-crystal SiNW can be grown laterally along Si(111) substrates that have been miscut toward [11− 2].

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    Date Created
    • 2014
    Resource Type
  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2014
      Note type
      thesis
    • Includes bibliographical references (p. 150-162)
      Note type
      bibliography
    • Field of study: Materials science and engineering

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    by Somilkumar J. Rathi

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