Description

In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three

In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN.

Reuse Permissions
  • 7.06 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2014
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: Ph.D., Arizona State University, 2014
      Note type
      thesis
    • Includes bibliographical references
      Note type
      bibliography
    • Field of study: Physics

    Citation and reuse

    Statement of Responsibility

    by Jialing Yang

    Machine-readable links