Description
This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on Ge(100) via gas-source epitaxy of Ge4H10, Si4H10 and SnD4.
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Contributors
- Xu, Chi (Author)
- Kouvetakis, John (Thesis advisor)
- Menéndez, Jose (Thesis advisor)
- Chizmeshya, Andrew (Committee member)
- Drucker, Jeffrey (Committee member)
- Ponce, Fernando (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2013
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- Partial requirement for: Ph.D., Arizona State University, 2013Note typethesis
- Includes bibliographical referencesNote typebibliography
- Field of study: Physics
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by Chi Xu