The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon.
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- Partial requirement for: M.S., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 46-47)Note typebibliography
- Field of study: Electrical engineering