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Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization

Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures.

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    Date Created
    • 2013
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2013
      Note type
      thesis
    • Includes bibliographical references (p. 176-187)
      Note type
      bibliography
    • Field of study: Materials science and engineering

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    by Stephen Kilgore

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