Description
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs.
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Contributors
- Kilgore, Stephen (Author)
- Adams, James (Thesis advisor)
- Schroder, Dieter (Thesis advisor)
- Krause, Stephen (Committee member)
- Gaw, Craig (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2013
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Note
- Partial requirement for: Ph.D., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 176-187)Note typebibliography
- Field of study: Materials science and engineering
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by Stephen Kilgore