Description
GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices.
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Contributors
- Chowdhury, Towhid (Author)
- Vasileska, Dragica (Thesis advisor)
- Goodnick, Stephen (Committee member)
- Goryll, Michael (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2013
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Note
- Partial requirement for: M.S., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 76-81)Note typebibliography
- Field of study: Electrical engineering
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Statement of Responsibility
by Towhid Chowdhury