GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development.
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- Partial requirement for: M.S., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 76-81)Note typebibliography
- Field of study: Electrical engineering